1：Experimental Design and Method Selection:

The study involved preparing GTO semiconductor thin films via spin-coating using 2-methoxyethanol as the solvent, with variations in Ga doping content (0, 10, 20, 50 at.%) and annealing temperatures (300, 350, 400°C). Al2O3 dielectric layers were also prepared using a similar solution process. The rationale was to explore the effects of Ga doping and annealing on film properties and TFT performance, aiming for low-voltage operation and high mobility.

2：Sample Selection and Data Sources:

Precursor solutions were made from SnCl2·2H2O and Ga(NO3)3·xH2O dissolved in 2-methoxyethanol. Substrates included p-Si with thermally grown SiO2 and glass substrates for film characterization. Data were acquired through various characterization techniques.

3：List of Experimental Equipment and Materials:

Equipment included a magnetic stirrer, hot plate, tube furnace, RF magnetron sputtering system, thermal gravimetric analyzer (TGA, TA Q500), stylus profiler (Kosaka Laboratory ET3000), field-emission scanning electron microscope (FE-SEM-4800-1), energy disperse spectroscopy (EDS), X-ray diffraction (XRD, Bruker D8 Advanced and Da Vinci Design system), ultraviolet-visible spectrophotometer (UV, Shimadzu UV2400), X-ray photoelectron spectroscopy (XPS, ThermoFischer ESCALAB 250Xi), atomic force microscope (AFM, Dimension Edge, Bruker), precision impedance analyzer (WK6515B), and semiconductor parameter analyzer (Keithley 4200). Materials included SnCl2·2H2O (Aladdin, 99.99%), Ga(NO3)3·xH2O (Aladdin, 99.9%), Al(NO3)3·9H2O (Aladdin, 99.99%), 2-methoxyethanol, acetone, ethyl alcohol, deionized water, PTFE filters, ITO for electrodes, and p-Si wafers.

4：0). Materials included SnCl2·2H2O (Aladdin, 99%), Ga(NO3)3·xH2O (Aladdin, 9%), Al(NO3)3·9H2O (Aladdin, 99%), 2-methoxyethanol, acetone, ethyl alcohol, deionized water, PTFE filters, ITO for electrodes, and p-Si wafers. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Precursor solutions were stirred, filtered, and spin-coated onto substrates. Films were pre-annealed on a hot plate, then annealed in a tube furnace. For Al2O3 dielectric, UV curing was applied. ITO electrodes were deposited by RF sputtering. Characterization involved TGA, thickness measurement, SEM, EDS, XRD, UV-Vis, XPS, AFM, capacitance measurement, and electrical testing of TFTs.

5：Data Analysis Methods:

Data were analyzed using techniques such as deconvolution of XPS peaks, calculation of optical bandgap from UV-Vis spectra, measurement of film roughness via AFM, and extraction of TFT parameters (mobility, subthreshold swing, threshold voltage, on-off ratio) from transfer and output curves using standard formulas.