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[IEEE 2018 Asia Communications and Photonics Conference (ACP) - Hangzhou (2018.10.26-2018.10.29)] 2018 Asia Communications and Photonics Conference (ACP) - All-optical inverter based on hybrid square-rectangular laser
摘要： All optical inverter is realized based on a hybrid square-rectangular laser. Dynamic performance up to 5 Gb/s is reached with extinction ratio of 10 dB.
关键词： semiconductor lasers,All-optical inverter,mode suppression,injection-locking
更新于2025-09-16 10:30:52
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Regulating the Single-Mode Lasing Intensity of Semiconductor Lasers without Wavelength Shift
摘要： A simple method to regulate the single-mode lasing intensity of semiconductor lasers without wavelength shift is demonstrated in this paper. The basic component is a digital micro-mirror device (DMD), which can be taken as an adjustable two-dimensional grating by its special structure. The lasing peak wavelength and peak intensity are respectively regulated by the DMD angular position and the DMD setting. The lasing peak wavelength could be tuned over by rotating the DMD. Meanwhile, the lasing peak intensity could be regulated by the DMD setting, which generates optical feedback digitally. The regulating speed is very high (up to 10kHz) and has no wavelength shift in the lasing mode, which is more stable and faster than the conventional method.
关键词： optical feedback,Semiconductor lasers,lasing mode regulation
更新于2025-09-16 10:30:52
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Reservoir computing and decision making using laser dynamics for photonic accelerator
摘要： The photonic accelerator is a new paradigm of photonic technologies for artificial intelligence, wherein the systems can accelerate information processing in electronic computing. Schemes for reservoir computing and decision making are promising examples of the photonic accelerator. In this work, we describe recent advances in the architectures of reservoir computing and decision making based on complex photonics, wherein the physics of light, including ultrafast dynamics in semiconductor lasers with optical feedback, plays a crucial role in the photonic accelerator.
关键词： reservoir computing,optical feedback,photonic accelerator,decision making,semiconductor lasers
更新于2025-09-16 10:30:52
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Experimental Demonstration of π Equivalent Phase-Shifted SBG Laser with Controlled Distributed Phase Shift
摘要： We designed and fabricated a π equivalent phase-shifted sampled Bragg grating (SBG) semiconductor laser with a controlled distributed phase shift. The phase shift is equivalently realized with reconstruction-equivalent-chirp (REC) technique. The laser is divided into three sections with the same length. By injecting different currents into the side and middle sections, a distributed phase shift can be introduced. The lasing wavelength can be continuously tuned by the injection currents. In our experiment, when the total current keeps 130 mA, the lasing wavelength can be continuously tuned by 1.2 nm. During the tuning, the side mode suppression ratio keeps above 40 dB and the output power varies only 1.3 dB. Therefore, the proposed method provides an alternative solution for the multiwavelength laser arrays in dense wavelength-division multiplexing (DWDM) systems.
关键词： Fibre Gratings,Semiconductor Lasers,Tunable Lasers
更新于2025-09-12 10:27:22
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Photonic Reservoir Computing (Optical Recurrent Neural Networks) || 7. Semiconductor lasers as reservoir substrates
摘要： Semiconductor lasers are the most common type of lasers produced, with a wide range of applications that include optical storage systems, communication systems (ranging from short-distance data communication systems to long-haul fiber-optic networks), as pump sources, for material processing, and in many other applications. A recent application, and the topic of this chapter, is the use of semiconductor lasers as substrates for photonic reservoir computers. Here, we present an overview of recent publications and discuss the main properties of photonic reservoir computers based on semiconductor lasers subject to optical feedback. The optical feedback serves as a way to create the recurrence required for reservoir computing in the context of delay-based reservoir computers.
关键词： photonic reservoir computers,optical feedback,Semiconductor lasers,delay-based reservoir computers
更新于2025-09-12 10:27:22
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The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
摘要： p-type modulation doping of the quantum dot active region is known to improve high temperature and dynamic performance of quantum dot lasers. These improvements are critical to realizing commercially relevant quantum dot devices on silicon and are shown to enable continuous wave operation over 100?C, nearly complete insensitivity to optical feedback, and orders of magnitude improvement in device reliability relative to unintentionally doped active regions. Also described is a spectrally resolved analysis of the effect of p-modulation doping on the optical gain revealing anomalous behavior that explains the high characteristic temperatures commonly observed in literature for similar devices on native substrate.
关键词： Integrated optoelectronics,photonics,quantum dots,semiconductor lasers
更新于2025-09-12 10:27:22
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InGaAlP/GaAs Injection Lasers of the Orange Optical Range (~600 nm)
摘要： Lasing in the orange spectral range (599–605 nm) is demonstrated for (AlxGa1 – x)0.5In0.5P–GaAs laser diodes grown by metalorganic vapor-phase epitaxy (MOVPE) on GaAs (211)A and (322)A substrates. The active region consists of four layers of InxGa1 – xP vertically coupled quantum dots. The leakage of non-equilibrium electrons from the active region is suppressed by barriers consisting of four quantum-confinement layers of the InGaAlP solid solution with a high Ga content. The maximal optical output power in the pulsed regime is 800 mW and is limited by the catastrophic optical degradation of mirrors. The lasers fabricated from structures grown on (322)A substrates have a lower threshold current density, higher differential quantum efficiency, and smaller internal losses when compared with lasers fabricated from structures grown on (211)A substrates, which is explained by the higher barrier for nonequilibrium electrons in the first case.
关键词： quantum dots,semiconductor lasers,orange radiation
更新于2025-09-12 10:27:22
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D‐A Type Pendant Conjugated Molecules based on Triazine Center with Depressed Intramolecular Charge Transfer Characteristics as Gain Media for Organic Semiconductor Lasers
摘要： A set of fluorene-capped pendant conjugated molecules (T-m and T-p), which consist of triazine center with three carbazole substituents as the donor-acceptor (D-A) type pendant structure, were designed, synthesized and investigated as gain media for organic semiconductor lasers (OSLs). Particularly, varying the capping positions of the fluorene units onto the pendant core structures results in obviously different intramolecular charge transfer (ICT) properties, whereas T-m manifested depressed ICT characteristic and high fluorescence quantum yield. The lowest ASE threshold in neat films was recorded of 1.9 μJ/cm2 for T-m and 83.8 μJ/cm2 for T-p, respectively, which indicated that depressed ICT characteristic in the case of T-m helps to enhance the ASE properties. Remarkably, the ASE threshold remained almost unchanged and the ASE spectra showed very small shifts (within 1 nm) for T-m with film samples annealed up to 180°C in open air. In contrast, its linear counterpart 2FEtCz-m showed obviously increased ASE threshold upon annealing above 100°C. The results suggest that the selective construction of conjugated pendant molecules with depressed ICT characteristics is beneficial for finely modulating the optical and electrical properties as well as improving the thermostability and photostability, which manifests the great potentials as robust gain media for OSLs.
关键词： Organic semiconductors,Amplified spontaneous emission (ASE),Organic semiconductor lasers,Pendant conjugated molecules,Intramolecular charge transfer (ICT)
更新于2025-09-12 10:27:22
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Feedback Insensitive External-Cavity Semiconductor Ring Laser Utilizing a Weak Intracavity Isolator
摘要： External optical feedback (EOF), caused by the return loss of connected circuits, is well known to have a strong impact on the performance of semiconductor lasers [1]. Feedback effects are usually prevented by placing an optical isolator at the output of the laser. A strong isolation value of approximately 60dB is typically required for tunable lasers. It has proven difficult to implement sufficiently strong optical isolators in a form suited to photonic integration [2]. For this reason we have previously proposed a ring laser with weak intracavity isolation to enable a feedback insensitive integrated tunable laser [3]. In such a laser the isolator is used only to enforce unidirectional operation of the device and the returned signal couples in the lossy counter-propagating direction. Using our rate equation analysis it was predicted that 10dB intracavity isolation completely suppresses the effects of EOF over the operating range of interest in terms of output power, linewidth and relative intensity noise. In such a cavity, the weak isolation can now be implemented with known integration schemes [2]. In this contribution we demonstrate for the first time that insensitivity can indeed be achieved using a ring laser with weak intracavity optical isolation. The laser system is schematically shown in Fig. 1 and is implemented using polarization maintaining optical fiber, a multi-quantum well semiconductor optical amplifier and an optical isolator consisting of a free space Faraday rotator and two polarizers. By changing the orientation of the polarizers the amount of isolation can be set, allowing for a direct comparison to our theory. Finally, two 3dB fiber-fused splitters are used as output couplers to make the laser cavity as symmetrical as possible when no isolation is provided.
关键词： intracavity isolation,External optical feedback,optical isolator,ring laser,semiconductor lasers
更新于2025-09-12 10:27:22
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Theory of Frequency-Modulated Combs in Lasers with Spatial Hole Burning, Dispersion, and Kerr Nonlinearity
摘要： Frequency-modulated (FM) frequency combs constitute an exciting alternative to generate equidistant spectra. The full set of Maxwell-Bloch equations is reduced to a single master equation for lasers with fast gain dynamics to provide insight into the governing mechanisms behind phase locking. It reveals that the recently observed linear frequency chirp is caused by the combined effects of spatial hole burning, group velocity dispersion, and Kerr nonlinearity due to asymmetric gain. The comparison to observations in various semiconductor lasers suggests that the linear chirp is general to self-starting FM combs.
关键词： dispersion,spatial hole burning,semiconductor lasers,Kerr nonlinearity,Frequency-modulated combs
更新于2025-09-12 10:27:22