- 标题
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Inserting a Low-Refractive-Index Dielectric Rear Reflector into PERC Cells: Challenges and Opportunities
摘要： Light emitting devices based on Si quantum dots/SiO2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.
关键词： electroluminescence (EL),Direct current (dc),Si quantum dots (Si QDs),frequency dependent
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Sozopol, Bulgaria (2019.9.6-2019.9.8)] 2019 IEEE 8th International Conference on Advanced Optoelectronics and Lasers (CAOL) - Evaluation of Unauthorization at the Express-Control of Heating of Natural Gas
摘要： Light emitting devices based on Si quantum dots/SiO2 multilayers with dot size of 2.5 nm have been prepared. Bright white light emission is achieved under the dc driving conditions and the turn-on voltage of the device is as low as 5 V. The frequency-dependent electroluminescence intensity was observed under ac conditions of square and sinusoidal wave. It was found that the emission wavelength changes with frequency when sinusoidal ac is applied. The degradation of emission intensity is less than 12% after 3 h for ac driving condition, exhibiting the better device stability compared to the dc driving one.
关键词： electroluminescence (EL),Direct current (dc),Si quantum dots (Si QDs),frequency dependent
更新于2025-09-23 15:21:01