研究目的
Investigating the performance of Si quantum dots-based light emitting devices under both dc and ac driving conditions.
研究成果
The study demonstrated that stable and strong EL can be observed from Si QDs/SiO2 multilayers under both dc and ac driving conditions. The devices showed good light emission stability under ac driving conditions, indicating potential applications for future Si-based optoelectronic integration.
研究不足
The mechanism of frequency-dependent EL peak shift in the devices is still unclear at the present stage.
1：Experimental Design and Method Selection:
The device was grown on p-type monocrystalline Si wafers in a conventional PECVD system. The a-Si:H sublayers were deposited using a pure silane gas, followed by in situ plasma oxidation to form ultrathin SiO2 sublayers. The samples were then annealed to form Si QDs. ITO and Al electrodes were deposited to form the EL device.
2：Sample Selection and Data Sources:
p-type monocrystalline Si wafers with resistivity of 1–3 Ω·cm were used.
3：List of Experimental Equipment and Materials:
PECVD system with a RF of
4：56 MHz, silane gas, oxygen, ITO and Al electrodes. Experimental Procedures and Operational Workflow:
The EL signals were measured under both dc and ac bias by a HORIBA Jobin Yvon synapse CCD detector in the visible range and a liquid N2 cooled InGaAs detector in the infrared range.
5：Data Analysis Methods:
The spectra were calibrated by taking into account the sensitivity of the system.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
