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Fracture strength of silicon torsional mirror resonators fully coated with submicrometer-thick PECVD DLC film
摘要： In this work, we attempted to enhance the torsional fracture strength of single crystal silicon (SCS) resonators for micro mirrors application by introducing a 300 nm-thick diamond-like carbon (DLC) coating. The SCS torsional beams of the resonators were 20 μm wide and 9 μm thick, and fully coated with DLC films using plasma enhanced chemical vapor deposition (PECVD) at three different deposition bias voltages. The resonators were driven by a piezoelectric actuator and their angular amplitude was measured by a custom-made torsional test system. Average nominal torsional fracture strength of DLC coated resonators was 11.1–30.0% higher than that of bare SCS, reaching a value of 2.93 GPa. The torsional fracture strength of resonators exhibited a good agreement with the tensile fracture strength. Deviations in torsional strength were reduced with increasing deposition bias voltage due to the compressive residual stress of DLC films.
关键词： Single crystal silicon,Micro mirror resonator,Diamond-like carbon film,Strength deviation,Torsional fracture strength
更新于2025-09-23 15:23:52
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Localized Deformation and Fracture Behaviors in InP Single Crystals by Indentation
摘要： The indentation-induced deformation mechanisms in InP(100) single crystals were investigated by using nanoindentation and cross-sectional transmission electron microscopy (XTEM) techniques. The results indicated that there were multiple “pop-in” events randomly distributed in the loading curves, which were conceived to arise primarily from the dislocation nucleation and propagation activities. An energetic estimation on the number of nanoindentation-induced dislocations associated with pop-in effects is discussed. Furthermore, the fracture patterns were performed by Vickers indentation. The fracture toughness and the fracture energy of InP(100) single crystals were calculated to be around 1.2 MPa·m1/2 and 14.1 J/m2, respectively.
关键词： InP(100) single crystal,nanoindentation,fracture toughness,transmission electron microscopy,Pop-in
更新于2025-09-23 15:23:52
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Millimeter-scale single-crystalline semiconducting MoTe <sub/>2</sub> via solid-to-solid phase transformation
摘要： Among the Mo- and W-based two-dimensional (2D) transition metal dichalcogenides (TMDCs), MoTe2 is particularly interesting for phase-engineering applications, because it has the smallest free energy difference between the semiconducting 2H phase and metallic 1T’ phase. In this work, we reveal that, under the proper circumstance, Mo and Te atoms can rearrange themselves to transform from a polycrystalline 1T’ phase into a single-crystalline 2H phase in a large scale. We manifest the mechanisms of the solid-to-solid transformation by conducting the density functional theory calculations, transmission electron microscopy, energy dispersive X-ray spectroscopy, X-ray photoelectron spectroscopy and Raman spectroscopy. The phase transformation is well described by the time-temperature-transformation diagram. By optimizing the kinetic rates of nucleation and crystal growth, we have synthesized single-crystalline 2H-MoTe2 domain with a diameter of 2.34 mm, centimeter-scale 2H-MoTe2 thin film with a domain size up to several hundred micrometers, and the seamless 1T’-2H MoTe2 coplanar homojunction. The 1T’-2H MoTe2 homojunction provides an elegant solution for ohmic contact of 2D semiconductors. The controlled solid-to-solid phase transformation in 2D limit provides a new route to realize wafer-scale single-crystalline 2D semiconductor and coplanar heterostructure for 2D circuitry.
关键词： 1T’-2H interface,phase transformation,single crystal,MoTe2 film
更新于2025-09-23 15:23:52
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High infrared transmittance CdS single crystal grown by physical vapor transport
摘要： Φ55 × 15 mm2 CdS bulk single crystal with high infrared transmittance was grown by physical vapor transport. The single crystal has a consistent structure from top to bottom, which was confirmed by X-ray diffraction. The (002) full-width at half-maximum of the X-ray diffraction was measured to be 60.00 arcsec, indicating a good quality of the structure. Hall mobility, specific resistivity, and carrier concentration for the top and bottom of the crystal were observed as well. Transmittance for the CdS single crystal was measured to be higher than 70% from 2.5 to 4.5 μm, making the single crystal an important candidate for infrared window materials. Furthermore, the absorption mechanism of the CdS single crystal was analyzed.
关键词： physical vapor transport,X-ray diffraction,semiconducting materials,single crystal growth
更新于2025-09-23 15:23:52
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Domain imaging in Fe-doped KNbO3 single crystal via trinocular microscopy and scanning electron microscopy
摘要： Trinocular microscopy with a high spatial resolution is a promising technique for studying the surface morphology of materials. The cleavage face of ferroelectric Fe-doped K niobate (KNbO3) crystals was chemically etched by using HNO3. Trinocular microscopy was used to study the surface morphology of the grown ferroelectric KNbO3 single crystals. The grown surface of the crystal with a 60° domain wall revealed the same interaction and orientations. The results indicate that the type of domain walls that occur in ferroelectric crystals depend on the symmetry of both the nonferroelectric and ferroelectric phases of the crystal.
关键词： Trinocular microscopy,Single crystal,Etching technique,Domain wall
更新于2025-09-23 15:22:29
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Hierarchical porous TiO2 single crystals templated from partly glassified polystyrene
摘要： Hierarchical macro-mesoporous anatase TiO2 single crystal is one-pot synthesized in an EtOH-H2O system using polystyrene (PS) as the single porogen both for macropore and mesopore and TiF4 as the titanium precursor. The key to the simultaneous growth of single crystal and the introduction of hierarchical pores is the assembly of PS and titania at the glassification temperature of PS (100 °C). During the hydrolytic polymerization of TiF4, PS is encapsulated inside titania and gradually glassified. The interference from elastic PS on the oriental growth of TiO2 crystallite is thus minimized and the final removal of PS through calcination leaves interconnected macropore and mesopore inside the single crystal. According to XPS, EPR and fluorescence analyses, abundant oxygen vacancies are formed on the hierarchical porous single crystal, which presents extraordinary photocatalytic activity and stability in degrading organic pollutants under simulated sunlight irradiation using Rhodamine B as the model. The improved photocatalytic activity is a synergistic effect of improved separation of charge carrier and facilitated interfacial charge transfer benefitting from highly accessible porous single crystal structure.
关键词： Oxygen vacancy,Photocatalysis,Single crystal,Charge transfer,Hierarchical porous TiO2
更新于2025-09-23 15:22:29
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Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
摘要： The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed.
关键词： Photoconductivity,β-Ga2O3,Single crystal,Activation energy,Trap levels,Thermostimulated luminescence
更新于2025-09-23 15:22:29
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Bendable Single Crystal Silicon Nanomembrane Thin Film Transistors with Improved Low-Temperature Processed Metal/n-Si Ohmic Contact by Inserting TiO2 Interlayer
摘要： Bendable single crystal silicon nanomembrane thin film transistors (SiNMs TFTs), employing a simple method which can improve the metal/n-Silicon (Si) contact characteristics by inserting the titanium dioxide (TiO2) interlayer deposited by atomic layer deposition (ALD) at a low temperature (90 °C), are fabricated on ITO/PET flexible substrates. Current-voltage characteristics of titanium (Ti)/insertion layer (IL)/n-Si structures demonstrates that they are typically ohmic contacts. X-ray photoelectron spectroscopy (XPS) results determines that TiO2 is oxygen-vacancies rich, which may dope TiO2 and contribute to a lower resistance. By inserting TiO2 between Ti and n-Si, Ids of bendable single crystal SiNMs TFTs increases 3–10 times than those without the TiO2 insertion layer. The fabricated bendable devices show superior flexible properties. The TFTs, whose electrical properties keeps almost unchanged in 800 cycles bending with a bending radius of 0.75 cm, obtains the durability in bending test. All of the results confirm that it is a promising method to insert the TiO2 interlayer for improving the Metal/n-Si ohmic contact in fabrication of bendable single crystal SiNMs TFTs.
关键词： ohmic contact,thin film transistor,single-crystal Si nanomembrane (Si NMs),TiO2 insertion layer
更新于2025-09-23 15:22:29
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A comparative study of the growth dynamics and tribological properties of nanocrystalline diamond films deposited on the (110) single crystal diamond and Si(100) substrates
摘要： Nanocrystalline diamond (NCD) films were grown on the High Pressure High Temperature (HPHT) (110) single crystal (SC) diamond substrates by Microwave Plasma Enhanced Chemical Vapor Deposition (MPCVD) in methane/hydrogen/nitrogen plasma. The thickness of the films was varied between 2.2 and 22.5 μm. The cauliflower-like surface morphology was observed by means of Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). The scaling behavior of NCD films growth was investigated. The relatively high value of the roughness exponent αs = 1.5–1.6 was found indicating anomalous scaling. Therefore, shadowing and diffusional instabilities can affect the film growth. The tribological properties of the NCD films deposited on the SC(110) diamond were compared with the NCD films prepared on the Si(100) substrates. Both types of specimens were tested under similar Hertzian contact pressure. The lower wear volume losses were observed on the NCD/SC(110) specimens. Therefore, the influence of substrate and substrate/film interface properties on the tribological behavior of the NCD films grown on Si(100) can be expected to cause NCD films deflection.
关键词： Wear,Single crystal,Tribology,NCD
更新于2025-09-23 15:22:29
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Constructing CH <sub/>3</sub> NH <sub/>3</sub> PbI <sub/>3</sub> and CH <sub/>3</sub> NH <sub/>3</sub> PbBr <sub/>3</sub> Perovskite Thin Film Electronic Structure from Single Crystal Band Structure Measurements
摘要： Photovoltaic cells based on halide perovskites and possessing remarkably high power conversion efficiencies have been reported. To push the development of such devices further, a comprehensive and reliable understanding of their electronic properties is essential, but presently not available. To provide a solid foundation for understanding the electronic properties of polycrystalline thin films, we employ single crystal band structure data from angle-resolved photoemission measurements. For two prototypical perovskites (CH3NH3PbBr3 and CH3NH3PbI3) we reveal the band dispersion in two high symmetry directions, and identify the global valence band maxima. With these benchmark data, we construct 'standard' photoemission spectra from polycrystalline thin film samples and resolve challenges discussed in the literature of determining the valence band onset with high reliability. Within the framework laid out here, the consistency of relating the energy level alignment in perovskite-based photovoltaic and optoelectronic devices with their functional parameters is substantially enhanced.
关键词： single crystal and thin film perovskites,angle-resolved photoemission,low-energy electron diffraction and density functional theory
更新于2025-09-23 15:22:29