研究目的
To study the local energy levels that arise in the band gap of nominally pure and Mg2+ doped gallium oxide crystals.
研究成果
The investigation reveals that doping β-Ga2O3 with Mg2+ ions introduces deep trap levels associated with oxygen vacancies, evidenced by high-temperature TSL peaks at 354 K and 385 K with activation energies of 0.84 eV and 1.0 eV. Shallow trap levels are linked to interstitial gallium and other impurities. Photoconductivity bands at 2.0 eV and 3.8 eV are attributed to oxygen vacancies, while a band at 4.7 eV is due to Mg2+ ions. These findings enhance understanding of defect levels in β-Ga2O3, supporting its use in optoelectronic and power devices, and suggest areas for future research on defect nature and control.
研究不足
The study is limited to specific growth and doping conditions of β-Ga2O3 crystals; variations in impurity concentrations or synthesis methods may affect results. The deconvolution of TSL curves relies on assumptions of first-order kinetics, which might not fully capture complex defect interactions. The correlation between defects and TSL/PC bands is inferred and requires further validation.
1：Experimental Design and Method Selection:
The study involved investigating thermostimulated luminescence (TSL) and photoconductivity (PC) of X-ray irradiated β-Ga2O3 single crystals, both undoped and doped with Mg2+ ions. Methods included TSL glow curve deconvolution using temperature cleaning and first-order kinetics fitting, and PC measurements with monochromatic light excitation.
2：Sample Selection and Data Sources:
Samples were β-Ga2O3 single crystals grown by the zone floating technique with radiation heating, using high-purity gallium oxide (99.99%) and doped with MgO (0.1 at.%). Polycrystalline samples were also prepared by solid-phase synthesis. Data were obtained from TSL and PC measurements on these samples.
3：99%) and doped with MgO (1 at.%). Polycrystalline samples were also prepared by solid-phase synthesis. Data were obtained from TSL and PC measurements on these samples.
List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Equipment included an SF-4A quartz monochromator for TSL and PC measurements, a URS-002 microfocus X-ray tube with copper anticathode for X-ray irradiation, a cryostat with beryllium window, an electrometer for current detection, and a Xenon lamp for PC excitation. Materials included β-Ga2O3 crystals, MgO powder, indium contacts, and liquid nitrogen for cooling.
4：Experimental Procedures and Operational Workflow:
Samples were exposed to X-ray irradiation at 85 K for 20 minutes. TSL glow curves were registered during linear heating at 0.1 K/s. PC spectra were measured using the monochromator with indium electrodes providing Ohmic contact. Temperature cleaning method was used for deconvolution of TSL curves.
5：1 K/s. PC spectra were measured using the monochromator with indium electrodes providing Ohmic contact. Temperature cleaning method was used for deconvolution of TSL curves.
Data Analysis Methods:
5. Data Analysis Methods: TSL curves were deconvoluted using temperature cleaning and theoretical fitting with first-order kinetics equations. Activation energies were estimated using the initial rise method. PC spectra were analyzed for additional bands, and differences between doped and undoped samples were calculated.
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