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Remarkable improved photoelectric performance of SnS2 field-effect transistor with Au plasmonic nanostructures
摘要： The photoelectric devices developing towards the high integration and miniaturization in semiconductor industry can be pushed forward by the thriving research of two-dimensional layered metal dichalcogenides (2D-LMDs). SnS2 nanosheets have evident photoresponse to both ultraviolet and partial visible light, but only with a fair photoelectric performance limited by its atomic-layer thickness. Here we report a convenient and simple method to make a dramatic enhancement of the electrical and photoelectric performance of the SnS2 flake. By integrating SnS2 with Au plasmonic nanostructures, the photocurrent (Iph) increased by over 20 times. And the corresponding responsivity (R), light gain (G), and detectivity (D*) have been improved by ~2200%, 2200%, and 600%, respectively. The responsivity and detectivity of the Au NPs-SnS2 FET at 532 nm are 1125.9 A/W and 2.12×1011 Jones. Though being atomically thin, the hybrid SnS2 photodetector benefiting from local surface plasmonic resonance achieves an excellent photoelectric performance not normally possible with the pristine SnS2-only device.
关键词： 2D material,SnS2,field effect transistor,photodetector,plasmonic resonance
更新于2025-09-19 17:13:59
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Electrochemiluminescence resonance energy transfer system between non-toxic SnS2 quantum dots and ultrathin Ag@Au nanosheets for chloramphenicol detection
摘要： Herein, an efficient electrochemiluminescence energy resonance transfer (ECL-RET) system was first applied in an immunosensor for the detection of chloramphenicol (CAP). SnS2 quantum dots (SnS2 QDs) has an extremely narrow electrochemical emission spectrum, which was used as donor. Compared with conventional quantum dots, toxic-element-free SnS2 QDs exhibit superior environmental friendliness and biocompatibility. Ultrathin Ag@Au nanosheets (Ag@Au NSs) was selected as acceptor due to its excellent structure and controllable UV-vis absorption range. Furthermore, ZnO nanoflowers (ZnO NFs) was employed to modify the electrode surface to provide stable luminescent environment and support more SnS2 QDs. Taking these advantages, the absorption spectra of Ag@Au NSs and the ECL emission spectra of SnS2 QDs are highly matched which ensures the occurrence of ECL-RET. When the CAP analyte were absent, Ag@Au NSs was immobilized on the electrode, and its ultrathin thickness effectively shortens the path of ECL-RET to produce the weak ECL intensity. Inversely, CAP analyte would compete with coating antigen for the certain amount of antibody to remove excess Ag@Au NSs and cause relatively high ECL intensity. As a result, the proposed immunosensor performed satisfactory sensitivity with a wide linear range from 0.005 to 1000 ng mL?1 and a low detection limit (1.7 pg mL?1).
关键词： Chloramphenicol,Electrochemiluminescence energy resonance transfer,Ag@Au nanosheets,SnS2 quantum dots,Immunosensor
更新于2025-09-12 10:27:22
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SnS2 Nanosheets for Er-Doped Fiber Lasers
摘要： Stannic sulfide (SnS2), a latterly developed two-dimensional (2D) material, has fascinated scientists because it can be widely applied to materials chemistry, biomedicine, photocatalysis, etc. Especially, SnS2 have advantages of adjustable band-gap and good oxidation resistance, which indicates that this material has promising potential in nonlinear optics. However, the light interaction with-SnS2 is rarely investigated. In this study, high-quality SnS2 nanosheets (Ns) developed through a liquid phase exfoliation approach have been applied in ultrafast photonics for nonlinear processes. This fabrication approach can greatly increase the damage threshold of the SnS2 saturable absorber (SA). Furthermore, the SnS2 SA device is applied to an erbium-doped fiber laser (EDFL) resonator to obtain soliton molecules with different order. Ultimately, 11th-order soliton molecules, the highest order of soliton molecules through SnS2, are generated with soliton separation of 8 ps and spectral modulation period of around 1 nm. The above experimental results indicate that SnS2 has broad application prospects in the fields of mode-locked fiber laser and optical fiber communication, etc.
关键词： soliton molecule,mode-locking,2D material,SnS2,Er-doped fiber laser
更新于2025-09-12 10:27:22
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Dissipative soliton generation in Er-doped fibre laser using SnS <sub/>2</sub> as a saturable absorber
摘要： Dissipative soliton generation is successfully demonstrated in an Erbium-doped mode-locked fibre laser using Tin Disulfide (SnS2) as a saturable absorber in the near-zero dispersion regime. A stable dissipative soliton pulse train operating at a wavelength of 1560 nm is successfully obtained with a 32 nm FWHM power. The 152 fs pulses were produced using 0.48 nJ of pulse energy in the all-fibre laser cavity following compression in a single-mode fibre.
关键词： saturable absorber,Er-doped fibre laser,SnS2,dissipative soliton,mode-locked
更新于2025-09-11 14:15:04
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SnS <sub/>2</sub> quantum dots: Facile synthesis, properties, and applications in ultraviolet photodetector
摘要： Tin sulfide quantum dots (SnS2 QDs) are n-type wide band gap semiconductor. They exhibit a high optical absorption coefficient and strong photoconductive property in the ultraviolet and visible regions. Therefore, they have been found to have many potential applications, such as gas sensors, resistors, photodetectors, photocatalysts, and solar cells. However, the existing preparation methods for SnS2 QDs are complicated and require a high temperature and high pressure environments; hence they are unsuitable for large-scale industrial production. An effective method for the preparation of monodispersed SnS2 QDs at normal temperature and pressure will be discussed in this paper. The method is facile, green, and low-cost. In this work, the structure, morphology, optical, electrical, and photoelectric properties of SnS2 QDs are studied. The synthesized SnS2 QDs are homogeneous in size and exhibit good photoelectric performance. A photoelectric detector based on the SnS2 QDs is fabricated and its J–V and C–V characteristics are also studied. The detector responds under λ = 365 nm light irradiation and reverse bias voltage. Its detectivity approximately stabilizes at 1011 Jones at room temperature. These results show the possible use of SnS2 QDs in photodetectors.
关键词： photodetector,photoelectric properties,quantum dots,SnS2
更新于2025-09-11 14:15:04
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[IEEE 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz2018) - Nagoya, Japan (2018.9.9-2018.9.14)] 2018 43rd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz) - Carrier Dynamics in SnS<inf>2</inf> Single Crystals and Vertical Nanostructures: Role of Edges
摘要： SnS2 is a member of the van der Waals 2D layered materials family. Its moderate bandgap, environmental stability and high carrier mobility makes it attractive for solar energy conversion application. We explore how nanostructuring SnS2 in the form of vertically-aligned nanoflakes to increase the surface area impacts the lifetime and microscopic conductivity of photoinjected carriers compared to the bulk SnS2. Increased surface area and the presence of edges is beneficial to the efficiency of SnS2 photoanode performance but it comes at a cost of increased carrier trapping at surface and edge states.
关键词： THz spectroscopy,van der Waals materials,SnS2,carrier dynamics,nanostructuring
更新于2025-09-11 14:15:04
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Tunable Schottky barrier width and enormously enhanced photoresponsivity in Sb doped SnS2 monolayer
摘要： Doping, which is the intentional introduction of impurities into a material, can improve the metal-semiconductor interface by reducing Schottky barrier width. Here, we present high-quality two-dimensional SnS2 nanosheets with well-controlled Sb doping concentration via direct vapor growth approach and following micromechanical cleavage process. X-ray photoelectron spectroscopy (XPS) measurement demonstrates that Sb contents of the doped samples are approximately 0.22%, 0.34% and 1.21%, respectively, and doping induces the upward shift of the Fermi level with respect to the pristine SnS2. Transmission electron microscopy (TEM) characterization exhibits that Sb-doped SnS2 nanosheets have a high-quality hexagonal symmetry structure and Sb element is uniformly distributed in the nanosheets. The phototransistors based on the Sb-doped SnS2 monolayers show n-type behavior with high mobility which is one order of magnitude higher than that of pristine SnS2 phototransistors. The photoresponsivity and external quantum efficiency (EQE) of Sb-SnS2 monolayers phototransistors are approximately three orders of magnitude higher than that of pristine SnS2 phototransistor. The results suggest that the method of reducing Shottky barrier width to achieve high mobility and photoresponsivity is effective, and Sb-doped SnS2 monolayer has significant potential in future nanoelectronic and optoelectronic applications.
关键词： doping,two-dimensional,SnS2,optoelectronics,Schottky barrier width
更新于2025-09-10 09:29:36
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A Label-free Photoelectrochemical Aptasensor Based on N-GQDs Sensitized Zn-SnS2 for Aflatoxin B1 Detection
摘要： A new label-free aptasensor with high visible-light photoelectrochemical (PEC) activity was fabricated for the detection of AFB1 based on N-doped graphene quantum dots (N-GQDs) sensitized Zn doped SnS2 (Zn-SnS2) nanocomposites. N-GQDs sensitized Zn-SnS2 showed eminent PEC performance. Ascorbic acid was utilized as an efficient electron donor for scavenging photogenerated holes and inhibiting light driven electron-hole pair recombination. Under the optimum experimental conditions, the specific binding between AFB1 aptamer and AFB1 resulted in the linear decrease of photocurrent with the increase of logarithm of AFB1 concentration in the range of 0.01 ng mL-1 to 20 ng mL-1 with a detection limit of 3 pg mL-1. The constructed N-GQDs sensitized Zn-SnS2 PEC aptasensor exhibited high sensitivity, low cost and good reproducibility, which is a promising platform for the detection of other important analytes.
关键词： photoelectrochemical aptasensor,N-GQDs,Zn-SnS2,AFB1
更新于2025-09-09 09:28:46
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Band structure engineering design of g-C3N4/ZnS/SnS2 ternary heterojunction visible-light photocatalyst with ZnS as electron transport buffer material
摘要： Semiconductor heterojunction represents a family of promising photocatalysts for visible-light photocatalysis. In this work, a novel ternary g-C3N4/ZnS/SnS2 heterostructure has been designed and synthesized by a facile one-step hydrothermal method. The obtained ternary g-C3N4/ZnS/SnS2 heterostructures exhibited high photocatalytic activity in photodegradation of organic pollutants and photocurrent response irradiated by 410 nm LED light. The results demonstrated that the formation of the heterostructures can much improve the excellent photocatalytic activity if the lattice and energy level matching among the three semiconductors be satisfied, which causes efficient separation of photoinduced carriers, resulting in the high photodegradation of methylene blue (MB). As a result, the highest apparent rate constant Kapp of g-C3N4/ZnS/SnS2 hybrid is 0.148 min?1, which is 8.74, 3.22 and 37.01 times as high as that of pristine g-C3N4, SnS2 and ZnS, respectively.
关键词： ZnS,SnS2,C3N4,Buffer layer,Photocatalytic activity,Photocatalysis
更新于2025-09-09 09:28:46
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) van der Waals Heterojunctions
摘要： Van der Waals heterojunctions (vdWHs) have gained extensive attention because they can integrate the excellent characteristics of the stacked materials and most vdWHs exhibit type-II band alignment. However, type-III vdWHs with broken gaps are still very rare, which limits the development and application of two-dimensional (2D) materials in the fields of tunnel FETs (TFETs). Here, we theoretically demonstrate that 2D phosphorene/SnS2 (SnSe2) vdWHs possess type-III (broken-gap) band alignment, and their I-V curves present negative differential resistance (NDR) effects. The BTBT transport mechanism and its applications in TFETs are analyzed. Interestingly, a positive electric field can enlarge the tunnelling window and a negative electric field can realize multiple-band-alignment transformation (type I, type II, and type III). Thus, this work presents the intrinsic physics mechanism and electric field tunable multiple-band alignments in 2D type-III vdWHs and related electronic devices.
关键词： tunnel FETs,SnS2,phosphorene,type-III band alignment,Van der Waals heterojunctions,electric field,SnSe2
更新于2025-09-09 09:28:46