研究目的
Investigating the impact of nanostructuring SnS2 in the form of vertically-aligned nanoflakes on the lifetime and microscopic conductivity of photoinjected carriers compared to bulk SnS2.
研究成果
The carrier lifetime and mobility in <50 nm thick vertical SnS2 nanoflakes is only a factor of two to three times lower than in a bulk single crystal. The thinnest nanoflakes in the array are the most susceptible to carrier trapping and/or recombination at surface and edge states. Further transient conductivity measurements and photoelectrochemical characterization are needed to provide more insight into the roles of surfaces and edges on carrier lifetime and device performance.
研究不足
The study is limited by the need for further experiments on arrays with different lengths and thicknesses of the nanoflakes, as well as on arrays with the edges passivated by organic ligands to fully elucidate the nature of the observed carrier trapping or recombination mechanisms.
