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Fabrication of SnS <sub/>2</sub> /SnS Heterojunction with Enhanced Light-Assisted Electrochemical Water Splitting Performance
摘要： Semiconducting metal sul?des have raised strong research interest among researchers as a promising candidate for light-assisted electrochemical water splitting, because they have wide band gap. In order to harvest more light wavelengths for improvement of light-assisted electrochemical water splitting capacity, we fabricated SnS2/SnS heterojunction nanosheets via facile and environmental route. The SnS2/SnS heterojunction nanosheets were used as photo-electrocatalytic material which exhibited low over potential of ?0.64 V at the current density of 10 mA · cm?2 in 0.5 M NaSO4 solution. Moreover, the SnS and SnS2 nanosheets displayed high over potential values of ?0.80 and ?0.88 V at the current density of 10 mA · cm?2, respectively. This research ?nding may therefore show the potential for use of SnS2/SnS heterojunction nanosheets as low cost and environmentally friendly photo-electrocatalysis.
关键词： SnS2/SnS Heterojunction,SnS2 Nanosheet,SnS Nanosheet,Light-Assisted Electrochemical Water Splitting
更新于2025-09-04 15:30:14
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Synthesis, Characterization and Gas-Sensing Properties of Pristine and SnS2 Functionalized TeO2 Nanowires
摘要： We report the gas-sensing properties of pristine and SnS2 functionalized TeO2 nanowires (NWs). TeO2 NWs were synthesized by a vapor–liquid–solid growth method, and SnS2 functionalization was performed using an atomic layer deposition technique followed by thermal treatment. Structural and morphological analyses verified the formation of pristine and SnS2 functionalized TeO2 NWs with desired composition, phase, and morphology. Interestingly, sensing results showed that the pristine TeO2 NW gas sensor had better sensing properties relative to the SnS2 functionalized TeO2 NW gas sensor. An underlying sensing mechanism is explained in detail, and reasons for the decrease of sensing performance with the SnS2 functionalized TeO2 NW sensor was attributed to the coverage of TeO2 surface by the SnS2 nanoparticles.
关键词： Gas sensor,SnS2,NO2 gas,TeO2,Sensing mechanism
更新于2025-09-04 15:30:14
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The Post Annealing to Control the Number of Layers of 2D MoS2 and SnS2
摘要： We have demonstrated that post annealing could control the layer thickness of 2D MoS2 and SnS2 films transferred on a SiO2/Si substrate by varying the annealing temperature and time. Atomic force microscopy and Raman spectroscopy characterizations revealed that higher annealing temperature and longer treatment time led to thinner films, lower residues and fewer impurities on the surface of 2D materials. In addition, a higher possibility to attain few-layers on both 2D films was achieved using post annealing. The multiple layers of pristine films having the thickness over 15 nm were reduced down to bi-layers after annealing. We observed that the moderate annealing temperature of 450 °C on led to effective layer-thinning compared to the films annealed at 340 °C. The post annealing at 450 °C produced very smooth few-layers (≤4 nm thickness, >1 μm size) of 2D MoS2 and SnS2. However, the 2D films decomposed or disappeared at temperature greater than 650 °C. In addition, process time also affected the number of layers and the sweet spot turned out to be 2 to 3 hours in our experiment.
关键词： Annealing,Mechanical Exfoliation,Layer-Thinning,2D Materials,SnS2,MoS2
更新于2025-09-04 15:30:14