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A ambient-air sulfurization process for Cu2ZnSnS4 thin film solar cells: self-creating inert atmosphere using sulfur vapor
摘要： Sulfurization is an inevitable process for depositing high-quality Cu2ZnSnS4 (CZTS) thin films, which usually implements under high vacuum or inert atmosphere. In this work, a novel ambient-air sulfurization was designed for fabricating CZTS absorber, aiming to eliminate the requirement of complex vacuum equipment. The sulfur powder and oxide precursor films were enclosed in a quartz container, in which the inert-atmosphere was self-created during the annealing. The sulfurization mechanism was studied carefully through varying the amount of sulfur powder. Finally, the optimized CZTS thin films showed pure Kesterite phase, large grains as well as suitable band gap. The device fabricated with the ambient-air sulfurized CZTS thin films exhibited efficiency of 3% with Voc = 0.52V, Jsc = 12.61mA/cm2, and FF = 46.6%. This study offers a facile sulfurization route for CZTS thin films and the successful design principle could be applied in other absorber materials.
关键词： solar cell,Cu2ZnSnS4,ambient-air,thin films,sulfurization
更新于2025-09-11 14:15:04
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Modeling of a high performance bandgap graded Pb-free HTM-free perovskite solar cell
摘要： In this study, a lead-free nontoxic and hole transport material (HTM)-free perovskite solar cell (PSC) with a novel con?guration of glass/FTO/ZnO/CH3NH3SnI3(cid:1)xBrx/back contact has been modeled and optimized by a solar cell capacitance simulator (SCAPS). The bandgap of CH3NH3SnI3(cid:1)xBrx absorber is tuned in the range of 1.3 eV to 2.15 eV by variation of the Br doping content. To make a comparison, an optimized Pb-based PSC is also modeled. By optimizing the parameters, power conversion ef?ciency (PCE) of 16.30%, open circuit voltage (Voc) of 1.02 V, short circuit current density (Jsc) of 22.23 mA/cm2, and ?ll factor (FF) of 0.72 were obtained. As compare to the reports available in the literature, these results show much improvement and can provide guidelines for production of economic and environmentally friendly PSCs with further ef?ciency enhancement.
关键词： lead-free,perovskite solar cell,SCAPS,bandgap grading,HTM-free
更新于2025-09-11 14:15:04
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Self-assembled NiO microspheres for efficient inverted mesoscopic perovskite solar cells
摘要： Perovskite solar cells (PSCs) with both normal (n-i-p) and inverted (p-i-n) mesoscopic structures usually exhibit higher e?ciency than their planar counterparts because the mesoporous charge transport layers can supply heterogeneous nucleation sites for growing high quality perovskite crystals and enlarged charge separation area for better charge extraction. However, comparing with the achieved extremely high or even the certi?ed world record e?ciency of mesoscopic PSCs, the signi?cant improvement of inverted mesoscopic PSCs has yet been made, mainly owing to the lack of suitable p-type semiconductors for preparing mesoporous hole transport layers (HTLs). Here, an emulsion-based bottom-up self-assembly strategy is used to prepare NiO microspheres from well-dispersed NiO nanocrystals. The self-assembled NiO microspheres are further used to fabricate mesoporous NiO HTLs of the inverted mesoscopic PSCs. The as-prepared mesoporous NiO HTL with self-assembled NiO microspheres can provide more suitable graded energy alignment, better charge carrier dynamics and reduced dark recombination in the device comparing with the inverted planar PSC with NiO nanocrystal HTL, contributing to obviously enhanced photovoltaic performance and nearly eliminated photocurrent-voltage hysteresis. Due to the general strategy of emulsion-based bottom-up self-assembly for microspheres synthesis, it will overcome the shortage of p-type materials for preparing e?cient inverted mesoscopic PSCs.
关键词： Self-assembled NiO microspheres,Photovoltaic performance,Inverted mesoscopic perovskite solar cell
更新于2025-09-11 14:15:04
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Elucidating the effect of shunt losses on the performance of mesoporous perovskite solar cells
摘要： Mesoporous perovskite solar cells (MPSCs) suffer from various types of charge carrier losses, where shunt losses usually dominate. Herein, we perform a systematic study to investigate the impact of such losses on the photovoltaic performance of methylammonium lead iodide (MAPbI3)-based MPSCs. The shunt losses in the MPSCs are attributed to the leakage current and the non-geminated recombination losses. We also demonstrate that these losses can be reduced by the incorporation of appropriate thickness of compact titanium oxide (c-TiO2) interlayer between FTO and mesoporous TiO2 (m-TiO2). As a result, MPSCs exhibit higher open-circuit voltage (VOC) of 1.05 V, short-circuit current density (JSC) of 23.27 mA cm?2, and the power conversion efficiency (PCE) of 17.69% under one-sun illumination conditions. The improved device performance was attributed to (i) the efficient blocking of holes, (ii) the decrease of leakage current, and (iii) the suppression of the non-geminated recombination losses in the cells. The effect of the c-TiO2 layer thickness on the series resistance (RS), shunt resistance (RSh), and the non-geminated recombination were also discussed in detail.
关键词： Non-geminated recombination losses,Series and shunt resistance,Electron transport layer,Leakage current,Perovskite solar cell
更新于2025-09-11 14:15:04
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[IEEE 2018 International Conference on Computational and Characterization Techniques in Engineering & Sciences (CCTES) - Lucknow, India (2018.9.14-2018.9.15)] 2018 International Conference on Computational and Characterization Techniques in Engineering & Sciences (CCTES) - Analysis of Current Density, Absorption Coefficient for Increasing the Efficiency of Solar Cell by using GaAs as Substrate
摘要： In this paper, a mathematical modeling of graphene gated graphene GaAs Schottky Junction field effect solar cell has been conducted to obtain J-V curve which is the benchmarked of my research and the characteristics is compared by simulating layers of different semiconductor materials to obtain graphene based solar cell by using Silvaco Atlas tool. Numerical simulation of graphene based Schottky junction solar cells to identify possible future applications of graphene. Copper indium gallium diselenide. Cadmium telluride and amorphous silicon are chosen as the semiconductor bases because of their high absorption coefficient, high / tunable band gap, and the possibility for economical fabrication as compared to single crystal silicon technology.
关键词： carrier generation rate,absorption coefficient,Graphene based solar cell,energy of the photon,power density
更新于2025-09-11 14:15:04
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Electron transport material effect on performance of perovskite solar cells based on CH3NH3GeI3
摘要： Recently, organic-inorganic perovskite-based solar cells have become promising devices due to their unique proprieties in photovoltaic field. In this scenario, several studies focusing on perovskite solar cells based on Pb-perovskite layer. However, the factor of toxicity and stability of these devices is the main challenge to the progress in commercial production. In this study, a numerical modeling of perovskite solar cells using an alternative candidate which is Germanium as a perovskite material. This later is investigated in order to over- come the toxicity and stability effects on perovskite solar cells, and they exhibit similar photovoltaic perfor- mances as Pb-perovskite solar cells. Therefore, the effect of different kinds of electron transporting layer (ETL) materials on Ge-perovskite solar cell design is studied and investigated to enhance the conversion efficiency of perovskite devices. The obtained simulation results illustrate that perovskite solar cells based on C60 as ETL exhibit 13.5% of power conversion efficiency compared to that with other ETL materials. Thus, inserting C60 in perovskite solar cell design possibly will be considered as novel designing for future Ge-perovskite solar cells. The numerical simulation was performed using 1D-Solar Cell Capacitance Simulator (1D- SCAPS).
关键词： 1D- SCAPS,Perovskite solar cell,Ge-based perovskite material,J-V characteristics
更新于2025-09-11 14:15:04
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Relationship between the ideality factor and the iron concentration in silicon solar cells
摘要： The ideality factor value of silicon ??+ ? ?? solar cells with iron contaminants has been studied by means of computer simulation. The iron concentration range of 1010 ? 1013 cm?3, base doping level range of 1015 ? 1017 cm?3, and temperature range of 290 ? 340 K were used in the investigation. The Solar Cells Capacitance Simulator (SCAPS) was the tool used for numerical simulation of these devices. The two-diode model was used to extract the ideality factor. The following cases were considered: (i) Shockley–Read–Hall (SRH) recombination; (ii) both intrinsic recombination and SRH recombination; (iii) unpaired interstitial iron atoms; (iv) both iron–boron pairs and interstitial iron atoms. The algorithms of iron concentration evaluation in silicon solar cell by using current–voltage curve are proposed. The analytic expressions are suggested as well as calibration curves are calculated.
关键词： Ideality factor,Iron concentration,SCAPS simulator,Silicon solar cell
更新于2025-09-11 14:15:04
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New strategies for colloidal-quantum-dot-based intermediate-band solar cells
摘要： The intermediate-band solar cell (IBSC) concept promises to increase the efficiency limit in a single-junction solar cell through the absorption of below-bandgap-energy photons. Despite their operating principle having been proposed over 20 years ago, IBSCs have not delivered on this promise yet, and the devices fabricated so far, mainly based on embedded epitaxial quantum dots, have instead operated with lower efficiency than conventional solar cells. A new paradigm, based on the exploitation as the intermediate band of the intragap states naturally occurring in the density functional theory description of colloidal (i.e., chemically synthesized) quantum dots, was suggested recently. Here, we revisit this intriguing concept unveiling its shortcomings and propose two alternative schemes: in the first, the localized electron surface trap states, ubiquitously found in commonly synthesized colloidal quantum dots, are used as intermediate bands in strongly coupled films made of small InAs nanocrystals and, in the second scheme, the intermediate band is provided by the conduction-band-minimum-derived miniband in films of larger InAs nanocrystals. Both schemes yield estimated limiting IBSC efficiencies exceeding Shockley-Queisser’s limit for a single absorber.
关键词： efficiency,InAs nanocrystals,intermediate-band solar cell,colloidal quantum dots,Shockley-Queisser limit
更新于2025-09-11 14:15:04
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Ionic selective contact controls the charge accumulation for efficient and intrinsic stable planar homo-junction perovskite solar cells
摘要： The under-coordinated ionic defects at the surface and grain boundaries of organic-inorganic halide perovskite always attract and trap the free carriers via the electrostatic force and accelerate the ions migration by defect vacancies channels, significantly limiting the charge extraction efficiency and intrinsic stability of perovskite solar cells (PSCs). Here, a novel strategy of ionic layer induced homo-junction perovskite reinforced the build in field (Ebi) is proposed to further decrease trap recombination and suppress the ions migration, thereby enhancing the power conversion efficiencies (PCEs) and intrinsic stability of PSCs. Experiments and theories certify that the adsorbed cations and anions will not only give rise to interface charge accumulation/depletion of perovskite, resulting in boarder distributed and reinforced Ebi, but also increased the interface ions vacancy migration barriers via the extra ionic interaction. As a result, the resultant n-i-p PSCs showed a record PCE of 20.88% among the organic electron transfer layer (ETL) and deliver a high stability of 88% after aged 60 days in atmosphere without encapsulation. Our findings provide a new insight to further eliminate the side effect of ionic defects and guide to design newly contact interface to minimize the trap recombination and ions motion induced intrinsic stability of PSCs.
关键词： intrinsic stability,organic electron transportation layer,perovskite solar cell,band blending,surface ionic doping
更新于2025-09-11 14:15:04
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Enhance the solar cell efficiency by reduction of reflection losses
摘要： The enhancement of the solar cell efficiency field has been achieved in many methods due to the different factors and conditions that led to loss the solar energy .This work deals with the increasing of the efficiency of solar cell that made of single crystalline silicon .This increment achieved by the reduction of biggest type of losses of the conversion efficiency named reflection . by using two methods first ; forming grooves on the surface using pulse Nd:YAG laser with max energy 1J and pulse width 10ns, using the fast and accurate movement of the 3D optical galvo mirror scanning system to form the grooves , the second method was by deposition nanomaterials as Silver (Ag) and Cadmium telluride (CdTe) to constitute an antireflection layer for the incident solar spectrum . The effect of antireflection layer material type and the effect of incident light angle on the reflection had been studied in this work .The reflectance had been measured by a system designed and built to give the reflection for angles ranged 0 – 180 degree controlled by Microcontroller. The result inducate that increase in conversion efficiency was 28.3% for Ag/Si , and 32.9% for CdTe/Si than the original efficiency of Si solar cell.
关键词： silicon solar cell,reflectance,laser texture,nanoparticles,antireflection surfaces
更新于2025-09-11 14:15:04