摘要： The intermediate-band solar cell (IBSC) concept promises to increase the efficiency limit in a single-junction solar cell through the absorption of below-bandgap-energy photons. Despite their operating principle having been proposed over 20 years ago, IBSCs have not delivered on this promise yet, and the devices fabricated so far, mainly based on embedded epitaxial quantum dots, have instead operated with lower efficiency than conventional solar cells. A new paradigm, based on the exploitation as the intermediate band of the intragap states naturally occurring in the density functional theory description of colloidal (i.e., chemically synthesized) quantum dots, was suggested recently. Here, we revisit this intriguing concept unveiling its shortcomings and propose two alternative schemes: in the first, the localized electron surface trap states, ubiquitously found in commonly synthesized colloidal quantum dots, are used as intermediate bands in strongly coupled films made of small InAs nanocrystals and, in the second scheme, the intermediate band is provided by the conduction-band-minimum-derived miniband in films of larger InAs nanocrystals. Both schemes yield estimated limiting IBSC efficiencies exceeding Shockley-Queisser’s limit for a single absorber.