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Hard X-ray photoelectron spectroscopy investigation of annealing effects on buried oxide in GaAs/Si junctions by surface-activated bonding
摘要： Hard X-ray photoelectron spectroscopy measurements are performed on ≈10-nm-thick GaAs film/Si substrate junctions fabricated by the surface activated bonding and selective wet etching. The chemical shifts of Ga-O and As-O signals in Ga 2p3/2 and As 2p3/2 core spectra indicate that oxides are formed in a part of GaAs films neighboring GaAs/Si interfaces due to the surface activation process. Analyses of Ga-O and As-O signals show that the thickness of such buried oxides is decreased due to a post-bonding annealing at temperatures up to 400 °C. This means that the electrical properties of bonding interfaces, which are in the meta-stable states, are improved by the annealing. The thickness of oxides is different from that of amorphous-like transition layers at the GaAs/Si interfaces observed by transmission electron microscopy.
关键词： Buried interface,Surface activated bonding,GaAs/Si,HAXPES
更新于2025-09-23 15:23:52
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Effects of post bonding annealing on GaAs//Si bonding interfaces and its application for sacrificial-layer-etching based multijunction solar cells
摘要： By using the sacrificial layer (SL) etching, GaAs substrates are separated from III–V epi substrate//Si substrate junctions that are made by surface activated bonding (SAB) technologies. The post-bonding low-temperature (300-?C) annealing plays an essential role in achieving a promising (～90%) bonding yield. The effects of the post-bonding annealing are investigated by hard X-ray photoemission spectroscopy and current–voltage measurements of GaAs//Si bonding interfaces. It is found that the concentration of oxygen atoms at interfaces is reduced and the resistance decreases to 1.6–2.1 m??cm2 by the low-temperature annealing. Aluminum fluoride complexes are not observed by X-ray photoelectron spectroscopy on the exposed surfaces of separated GaAs substrates. The roughness average of the surfaces is ≈0.25–0.30 nm. The characteristics of double junction cells fabricated on the GaAs//Si junctions prepared by the SL etching are almost the same as those of cells fabricated by dissolving GaAs substrates after bonding. These results indicate that multijunction cells could be fabricated in a process sequence compatible with reuse of GaAs substrates by combining the SL etching and SAB.
关键词： Sacrificial layer etching,GaAs//Si double junction cells,Surface activated bonding,Low temperature annealing,Epitaxial lift-off
更新于2025-09-23 15:19:57
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Fabrication of bonded LNOI waveguide structure on Si substrate using ultra-precision cutting
摘要： Heterogeneous integration of a LNOI waveguide device on a mature Si platform is interesting for creating future high density and multi-functional platform. This paper reports the fabrication of bent LNOI waveguide on Si substrate using surface activated bonding with Si nanoadhesive layer and post-bond ultra-precision cutting at room temperature. This bonding method demonstrates the sufficient bond strength between LN wafer and thermally grown SiO2 to withstand ductile-mode cutting for waveguide fabrication. In this work, the width, height, and bent radius of the ridged LNOI waveguide on Si substrate were approximately 5, 2.5, and 300 μm, respectively. These room-temperature bonding and cutting methods are expected to fabricate various heterogenous devices with large coefficient of thermal expansion mismatch between dissimilar materials, not just LNOI/Si waveguide devices.
关键词： room-temperature fabrication,ultra-precision cutting,surface activated bonding,LNOI waveguide,Si substrate
更新于2025-09-11 14:15:04
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Room-Temperature Bonding of Wafers with Smooth Au Thin Films in Ambient Air Using a Surface-Activated Bonding Method
摘要： Wafers with smooth Au thin ?lms (rms surface roughness: < 0.5 nm, thickness: < 50 nm) were successfully bonded in ambient air at room temperature after an Ar radio frequency plasma activation process. The room temperature bonded glass wafers without any heat treatment showed a su?ciently high die-shear strength of 47–70 MPa. Transmission electron microscopy observations showed that direct bonding on the atomic scale was achieved. This surface-activated bonding method is expected to be a useful technique for future heterogeneous photonic integration.
关键词： Au-Au bonding,surface-activated bonding,room-temperature bonding,heterogeneous integration
更新于2025-09-10 09:29:36
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Stability of diamond/Si bonding interface during device fabrication process
摘要： Diamond/Si bonding interface with an entire contact area and high thermal stability is achieved by surface activated bonding method. The fabrication of diamond field-effect transistors (FETs) on the diamond bonded to Si is demonstrated. The FET exhibits clear saturation and pinch-off characteristics. A 5 nm thick SixCx-1 layer was formed at the interface with annealing at 1000 °C. The layer was formed by the inter-diffusion of carbon and Si atoms near the bonding interface, which plays a role of residual stress relaxation between diamond and Si. These results suggest that diamond/Si heterostructures are applicable for combining diamond devices with Si LSI.
关键词： surface activated bonding,diamond/Si bonding,heterostructures,thermal stability,field-effect transistors
更新于2025-09-10 09:29:36
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SOI wafer fabricated with a diamond BOX layer using surface activated bonding at room temperature
摘要： We propose a fabrication process for a silicon on insulator (SOI) wafer with a diamond buried oxide (BOX) layer by combining nanodiamond-seeding deposition and a surface-activated bonding technique for high-frequency and power device applications. The diamond layer was deposited on a base wafer by the spin-coating of nanodiamonds and microwave-plasma-enhanced chemical vapor deposition. The thermal conductivity of this deposited diamond layer was three times that of a conventional SiO2 layer. A silicon wafer was then bonded to the diamond layer at room temperature in ultrahigh vacuum without forming any voids. Additionally, this SOI wafer was used to fabricate devices at 1000 °C. Therefore, we believe that this SOI wafer with a diamond BOX layer and its fabrication process are important for the realization of self-heating devices such as next-generation high-frequency and power devices.
关键词： SOI wafer,surface-activated bonding,high-frequency devices,power devices,diamond BOX layer
更新于2025-09-10 09:29:36