研究目的
Investigating the stability of diamond/Si bonding interface during device fabrication process and demonstrating the fabrication of diamond field-effect transistors on diamond bonded to Si.
研究成果
The study successfully demonstrated the fabrication of diamond/Si bonding interface with an entire contact area and high thermal stability, suitable for device fabrication. The formation of a SixCx-1 layer at the interface upon annealing plays a crucial role in stress relaxation, making diamond/Si heterostructures promising for integrating diamond devices with Si LSI.
研究不足
The study is limited by the size of single-crystal diamond available, which is much smaller than Si, potentially limiting the scalability of the fabrication process. The thermal stability was tested up to 1000 °C, but higher temperatures or different environmental conditions were not explored.
1：Experimental Design and Method Selection:
The study employed the surface activated bonding (SAB) technique for bonding diamond and Si at room temperature. The thermal stability of the bonding interface was tested at 1000 °C in N2 gas ambient pressure.
2：Sample Selection and Data Sources:
A HPHT synthetic Ib type (100) single-crystal diamond (SCD) with a size of 4 mm × 4 mm ×
3：55 mm was bonded to a n-Si substrate. List of Experimental Equipment and Materials:
Equipment included an atomic force microscope, microwave plasma assisted chemical vapor deposition (MWCVD) reactor, transmission electron microscopy (TEM), and X-ray photoelectron spectroscopy (XPS).
4：Experimental Procedures and Operational Workflow:
The diamond surface was polished, bonded to Si using SAB, and then a p-type diamond layer was deposited. The bonding interface was characterized before and after annealing.
5：Data Analysis Methods:
The bonding interface was analyzed using TEM and XPS to evaluate the chemical bonding structures and interfacial structures.
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