Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films

摘要： Phosphorus doped silicon carbide film as emitter in heterojunction structure was deposited on p-type Si(100) wafers at various deposition conditions by means of PECVD technology using silane (SiH4), methane (CH4), hydrogen (H2) and phosphine (PH3, 2 vol.% in H2) gas as precursors. ITO or IZO film was RF magnetron sputtered on top of the different P doped a-SiC:H(n) film. Irradiation of structures with Xe ions to total fluency 5x1011 cm-2 was performed at room temperature. Influence of phosphorus concentration and type of transparent conducting oxide was investigated. A deeper insight on the impact of irradiation on the electrophysical properties of sample was obtained by the analysis of complex impedance spectra.