研究目的
Investigating the radiation hardness of heterojunction solar cell structures with TCO antireflection films under Xe ions irradiation.
研究成果
The study demonstrated that irradiation with Xe ions affects the electrical properties of heterojunction solar cell structures with TCO antireflection films, as evidenced by changes in impedance spectra. The findings provide insights into the radiation hardness of such structures, which is crucial for applications in space and other radiation-intensive environments.
研究不足
The study is limited to the effects of Xe ions irradiation on heterojunction solar cell structures with specific TCO antireflection films. The findings may not be directly applicable to other types of radiation or solar cell structures.
1：Experimental Design and Method Selection:
The study involved depositing phosphorus-doped silicon carbide films on p-type Si(100) wafers using PECVD technology, followed by RF magnetron sputtering of ITO or IZO films as antireflection layers. The structures were then irradiated with Xe ions to assess their radiation hardness.
2：Sample Selection and Data Sources:
p-type Si(100) wafers were used as substrates. The precursors for PECVD included silane, methane, hydrogen, and phosphine.
3：List of Experimental Equipment and Materials:
PECVD system for film deposition, RF magnetron sputtering system for TCO films, IC100 accelerator for Xe ions irradiation, Agilent LCR Meter 4284A for impedance measurements.
4：Experimental Procedures and Operational Workflow:
Deposition of a-SiC:H(n) films, sputtering of ITO/IZO films, irradiation with Xe ions, and impedance spectroscopy analysis.
5：Data Analysis Methods:
Analysis of complex impedance spectra to evaluate the impact of irradiation on the electrophysical properties of the samples.
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