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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • thin-film transistors
  • N2O plasma treatment.
  • amorphous InGaZnO
  • gate-bias stress
  • stability
应用领域
  • Electronic Science and Technology
机构单位
  • Peking University
567 条数据
?? 中文（中国） ▾

  • AlN passivation effect on Au/GaN Schottky contacts

    摘要： Surface passivation effect with an aluminum nitride (AlN) thin film deposited by atomic layer deposition (ALD) on metal/gallium nitride (GaN) junctions were investigated using current–voltage and capacitance–voltage (C–V) measurements. The sample with an AlN layer revealed higher barrier height and lower ideality factor compared to the sample without AlN layer. X-ray photoelectron spectroscopy measurement on bare GaN surface showed the presence of native oxide on the GaN surface. From C–V measurements, it was found that the interface state density was reduced with an AlN layer. Hence, deposition of AlN layer by ALD can be used to improve the interface quality of metal/GaN junction.

    关键词： Thin film,Interface state density,Barrier height,Aluminum nitride

    更新于2025-09-04 15:30:14

  • <i>In Situ</i> IR Spectroscopy of Mesoporous Silica Films for Monitoring Adsorption Processes and Trace Analysis

    摘要： Adsorption of molecules on high-surface-area materials is a fundamental process critical to many fields of basic and applied chemical research; for instance, it is among the simplest and most efficient principles for separating and remediating polluted water. However, established experimental approaches for investigating this fundamental process preclude in situ monitoring and thus obtaining real-time information about the ongoing processes. In this work, mid-infrared attenuated total reflection (ATR) spectroscopy is introduced as a powerful technique for quantitative in situ monitoring of adsorption processes and thus enrichment of traces of organic pollutants from aqueous solution in ordered mesoporous silica films. The synthesis, functionalization, and characterization of two silica films with 3D hexagonal and cubic pore structure on silicon ATR crystals are presented. Benzonitrile and valeronitrile as model compounds for aromatic and aliphatic water pollutants are enriched in hydrophobic films, while the matrix, water, is excluded from the volume probed by the evanescent field. Enrichment times of <5 s are observed during in situ measurements of benzonitrile adsorbing onto the film from aqueous solution. The sensing system is calibrated using the Freundlich adsorption equation as a calibration function. Enrichment factors of benzonitrile and valeronitrile within the film were determined to be >200 and >100, respectively, yielding detection limits in the low ppm range. Furthermore, fast and complete desorption of the analyte, ensuring reliable regeneration of the sensor, was verified. Lastly, we derive and experimentally validate equations for ATR spectroscopy with thin film adsorption layers to quantify the absolute mass of adsorbed pollutant in the film. The excellent agreement between recorded absorptions at target wavenumbers of the target analytes and corresponding simulations corroborates the validity of the chosen approach.

    关键词： infrared spectroscopy,functional coatings,sensor,porous materials,thin film

    更新于2025-09-04 15:30:14

  • Dewetting mechanisms and their exploitation for the large-scale fabrication of advanced nanophotonic systems

    摘要： Recent progress in submicron- and nano-fabrication technologies has led to the emergence of novel photonic structures such as optical nanoantennas and metasurfaces. Real-life applications of these advanced photonic structures still require substantial improvement of the fabrication processes, in terms of their throughput and cost-effectiveness. Because of its simplicity and effectiveness, dewetting of a thin film has attained increasing attention as a feasible process for improving the scalability and productivity. Here, we provide an overview of the mechanisms and phenomenologies of dewetting to foster an improved fundamental understanding necessary for the optimisation of the dewetting process condition and template design. We then review the strategies demonstrating the use of templated-dewetting for producing well-aligned arrays of submicron- and nanostructures with great control over their size, shape and arrangement. Recent applications of dewetted structures in advanced nanophotonics are reviewed with an emphasis on the exploitation of dewetting mechanisms. Special attention is given to the fabrication of resonant optical nanoantennas and nanophotonic applications in which high repeatability and throughput are important parameters: sensing, colourisation, photovoltaics and nonlinear light frequency conversion. We expect this review to provide a basis for the use of thin-film dewetting to realise the industrial-level fabrication of various practical advanced photonic systems.

    关键词： optical nanoantenna,interfacial instability,plasmonics,all-dielectric nanophotonics,nanofabrication,advanced photonic applications,Dewetting,thin film

    更新于2025-09-04 15:30:14

  • Properties of Co‐Evaporated RbInSe <sub/>2</sub> Thin Films

    摘要： The formation of an Rb-containing In-Se compound at the surface of Cu(In, Ga)Se2 (CIGS) thin films is assumed to be part of the mechanism of RbF post-deposition treatments (PDTs) performed on these absorber layers. Alkali-PDTs have acquired attention lately as they significantly enhance the efficiency of CIGS solar cells. In this contribution the formation of various phases during the RbF-PDT has been investigated. The results indicate that RbInSe2 is the most probable phase to form. Combining theoretical and experimental investigations, fundamental properties of a thermally co-evaporated RbInSe2 thin film are reported in order to serve as reference values in further studies.

    关键词： CIGSe thin film solar cells,crystal structure,RbInSe2 deposition,defect calculation,electronic structure

    更新于2025-09-04 15:30:14

  • Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

    摘要： Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

    关键词： thin-film transistors,oxygen annealing,HfIZO,photo-induced stability,device performance

    更新于2025-09-04 15:30:14

  • Observations on Si-based micro-clusters embedded in TaN thin film deposited by co-sputtering with oxygen contamination

    摘要： Using scanning electron microscopy (SEM) and high-resolution x-ray photoelectron spectroscopy with the synchrotron radiation we investigated Si-based micro-clusters embedded in TaSiN thin films having oxygen contamination. TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates and with various power conditions of TaN and Si targets. Three types of embedded micro-clusters with the chemical states of pure Si, SiOx-capped Si, and SiO2-capped Si were observed and analyzed using SEM and Si 2p and Ta 4 f core-level spectra were derived. Their different resistivities are presumably due to the different chemical states and densities of Si-based micro-clusters.

    关键词： oxygen contamination,HRXPS,TaN thin film,SEM,co-sputtering,Si-based micro-clusters

    更新于2025-09-04 15:30:14

  • Growth and Structural Properties of Graphene Oxide Thin Film with Spray Pyrolysis Technique

    摘要： The spray pyrolysis technique (SPT) is one of the most useful and simple methods to grow graphene oxide (GO) thin film. Good-quality GO thin films were fabricated by spray coating with GO powder (prepared by the modified Hummers method) on glass substrates. Raman spectroscopy, Field Emission Scanning Electron Microscope (FESEM), X-ray diffraction (XRD) analysis, and UV–visible spectroscopy were done to observe the presence of functional groups in the growth thin films and to determine the structure of GO. From the result of XRD test, the GO demonstrates peak at 10.58°(2θ), while the Raman spectroscopy reveals the presence of two prominent peaks, known as D and G bands, as well as 2D band. The ID/IG ratio for spray-deposited GO film was calculated with the value of 0.84. FESEM images showed that the glass substrates were completely covered by GO at different magnifications with a sheet-like structure. The optical absorption of graphene oxide was also observed at a wavelength rang of 275-350 nm.

    关键词： Graphene Oxide,Thin Film,Spray Pyrolysis Technique,Structural Properties

    更新于2025-09-04 15:30:14

  • Low-Operating-Voltage Resistive Memory Based on Bi <sub/> 1+ <i>δ</i> </sub> Fe <sub/>0.95</sub> Zn <sub/>0.05</sub> )O <sub/>3</sub> Films

    摘要： A resistive memory device based on the Ag/Bi1+(cid:2)(Fe0(cid:3)95Zn0(cid:3)05)O3/SRO/Pt/TiO2/SiO2/Si(100) structure was prepared using radio frequency magnetron sputtering. The composition of the thin film element was analyzed by X-ray photoelectron spectroscopy and the thickness of the thin film was characterized by scanning electron microscope. Through the electrical test, we found that the device exhibited low operating voltage, which included VSET of about 0.1 V, VRESET of about ?0.1 V, and VF of about 0.25 V. This facilitated the perfect integration of the device with the circuit design. Testing for 10,000 s at a substrate temperature of 85 (cid:3)C, the device showed excellent retention. The I–V fitting curves of the resistive devices were analyzed. The low resistance state was in line with the ohmic mechanism and the high resistance state was in accordance with the Space Charge Limited Current mechanism. The resistance change of the device was attributed to the formation of Ag conductive filaments.

    关键词： Low Operating Voltage,Thin Film,Sputtering,Resistive Random-Access Memory,Zn-Doped,BiFeO3

    更新于2025-09-04 15:30:14

  • P-1.13: Influence of the Source/Drain Material on Oxide Semiconductor Thin Film Transistors

    摘要： With the progress of technology, to reduce the load of display panels, some researchers have been carried out to investigate the effects of source/drain electrodes on the performance of a-IGZO based TFTs. In this paper, indium gallium zinc oxide (IGZO) is chosen as the active layer material, and we use four different types of source/drain materials including indium-tin-oxide (ITO), Al, Al-doped zinc oxide (AZO) and Ga-doped zinc oxide (GZO) to explore the influence of different source/drain materials on the characteristics of oxide semiconductor thin film transistors (TFT). The results show that TFTs with AZO as source/drain electrodes exhibit good characteristics. After 200℃ annealing, the output characteristic of TFT with AZO as source/drain electrodes becomes better and its source/drain series resistance is low. From this study, AZO can be considered as a hopeful source/drain material which would be utilized in the future displays technology.

    关键词： AZO,thin film transistors,IGZO,oxide semiconductor,source/drain material

    更新于2025-09-04 15:30:14

  • Stretchable active matrix of oxide thin-film transistors with monolithic liquid metal interconnects

    摘要： We demonstrate a new process scheme for fabricating stretchable active matrices of oxide thin-film transistors (TFTs), where TFTs and cross points of two metal layers on stiff islands are monolithically integrated with gallium-based liquid metal interconnects within an elastomeric matrix. As the liquid metal interconnects are formed by a photolithography-based technique compatible with conventional flexible circuit technology, this approach can provide high integration density and mechanical durability as required in stretchable displays or electronic skins. We have fabricated a 4 × 4 active matrix of oxide TFTs within a 20 × 20 mm2 area, which provides stable operation up to 40% of stretching.

    关键词： liquid metal interconnects,oxide thin-film transistors,active matrix,photolithography,stretchable electronics

    更新于2025-09-04 15:30:14