研究目的
Investigating the chemical states and intrinsic structures of Si-based micro-clusters embedded in TaSiN thin films with oxygen contamination and their correlation with resistivity.
研究成果
The resistivity of TaSiN thin films is strongly dependent on the chemical state and density of Si-based micro-clusters that were formed by oxygen contamination. Three types of Si-based micro-clusters (pure Si, SiOx capped Si, and SiO2 capped Si) embedded in TaN thin films were observed, and their different resistivities are presumably due to the different chemical states and densities of these micro-clusters.
研究不足
The study is limited by the oxygen contamination in the TaSiN thin films and the difficulty in calculating the size and density of micro-clusters in some samples due to unclear shapes.
1：Experimental Design and Method Selection:
TaSiN thin films were deposited by co-sputtering on fixed or rotated substrates with various power conditions of TaN and Si targets.
2：Sample Selection and Data Sources:
Samples were prepared with SiO2 at a thickness of 100 nm on p-type Si(100).
3：0). List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: High-resolution SEM (JEOL JSM 5900LV), 4-point probe (RT-80; Napson Co.), α–step profiler (DELTAK), high-resolution x-ray photoelectron spectroscopy (HRXPS) using the Pohang Light Source (PLS) synchrotron at beamline 8A1 (U7).
4：7). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: Deposition of TaSiN thin films, measurement of resistivity and thickness, observation of morphology using SEM, determination of chemical states using HRXPS.
5：Data Analysis Methods:
Curve-fitting of Ta 4 f and Si 2p core-level spectra using Doniach-S?unji′c curves convoluted with a Gaussian distribution.
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