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Kirigami-Based Highly Stretchable Thin Film Solar Cells that are Mechanically Stable for More than 1000 Cycles
摘要： Exploiting stretchable solar cells that can accommodate large strain and feature high cyclic mechanical endurance is challenging for wearable and skin-interfaced electronics application. In this work, we demostrated such solar cells using the kirigami design. Experiments and mechanical simulations showed that the kirigami structure effectively imparted stretchability to perovskite solar cells (PSCs) through out-of-plane deformation which significantly reduced the stress in devices. The kirigami-based PSCs with optimal geometric parameters exhibited high mechanical deformability, including stretchability (strain up to 200%), twistability (angle up to 450o) and bendability (radius down to 0.5mm). More importantly, the kirigami PSCs revealed high mechanical endurance with almost unchanged performance even after repetitive 1000 stretching, twisting and bending cycles. This kirigami design for stretchable PSCs presented here provides a promising strategy to achieve high deformability for solar cells as well as other optoelectronic devices.
关键词： kirigami,deformable,thin film solar cells,mechanical endurance,stretchable
更新于2025-09-19 17:13:59
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Short-circuit current density and fill factor improvement by optimizing In2O3:H and metal back reflector layers for p-i-n a-SiGe:H thin film solar cells
摘要： In this work, high efficiency p-i-n structure hydrogenated amorphous silicon germanium (a-SiGe:H) thin film solar cells were prepared via optimizing hydrogenated indium oxide In2O3:H (IOH) and silver/chromium/aluminum (Ag/Cr/Al) back reflector (BR) layers. Layer wise films including Al, Ag/Cr/Al and IOH/Ag/Cr/Al BR materials were fabricated into solar cells for improving short-circuit current density (Jsc) and fill factor (FF) which in turn enhanced output solar cell performance. Low resistivity, low carrier density and high mobility of IOH layers have been investigated with different water partial pressure ( PH2O ). Jsc was enhanced by 13.4% with IOH/Ag/Cr/Al BR structure due to their excellent optoelectronic properties compared to the initial solar cells with Al only. The spectral response of external quantum efficiency at long wavelengths of 550–900 nm was enhanced significantly by adding Ag and Cr with Al as composite electrode. A massive gain in Jsc of 1.13 mA/cm2 was further improved by using optimal PH2O with IOH compared to the one without this layer. High efficiency of 9.27% for a-SiGe:H solar cell was successfully fabricated with a high Jsc of 18.40 ± 0.03 mA/cm2 and FF of 69.48%.
关键词： IOH,back reflector,thin film solar cells,Jsc,a-SiGe:H,FF
更新于2025-09-19 17:13:59
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Effect of Ag doping on the performance of Cu2SnS3 thin-film solar cells
摘要： For the promising next-generation thin-film solar cells, Cu2SnS3 (CTS) solar cells still suffer from low open circuit voltage (VOC) and so resulting an unsatisfactory power conversion efficiency. Herein, Ag was introduced in solution-processed CTS thin films via adding AgNO3 into precursor solution for photovoltaic devices. Compared with CTS, the VOC deficit for CuxAg2?xSnS3 (CATS) based cells could be effectively reduced for about 10 mV, together with the increased short circuit current density (JSC) and fill factor (FF), a power conversion efficiency of 3.99% was achieved. Such improved performance of CATS cells could be attributed to the improved crystallization, reduced shunting channels and the decreased band-gap of CATS films.
关键词： Cu2SnS3,Ag,Doping,Thin-film solar cells
更新于2025-09-19 17:13:59
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Highlights in Applied Mineralogy || 4. Microstructure analysis of chalcopyrite-type Cu2ZnSe4 and kesterite-type Cu2ZnSnSe4 absorber layers in thin film solar cells
摘要： Thin film solar cells equipped with polycrystalline compound semiconductors as functional layer for light absorption have continuously been improved in terms of solar energy conversion efficiency, such that they became a competitive alternative to well-established silicon-based solar cells. In 1905, Einstein published a comprehensive, physical description of the photoelectric effect [1] and thus provided the theoretical framework for upcoming research of photovoltaic technologies. The emergence of photovoltaic devices, however, only started about 50 years later, and for several decades, it persisted a niche technology mainly for aerospace applications. Among others, silicon (Si) was known to belong to the group of (extrinsic) elemental semiconductors, and due to its abundance, it was the very first absorber material to be used in solar cells. Triggered by the oil crisis in the 1970s, the research of solar energy conversion technologies finally got a tremendous stimulus. As a result, research not only of silicon-based solar cells but also of other absorber layer materials based on compound semiconductors have been much more extensively endeavored. The latter were also brought into focus in order to address some severe drawbacks of silicon-based solar cells. First of all, the high energy consumption in fabricating single crystal silicon results in a quite long energy amortization time. In addition, the requirements on crystallinity and purity are extremely high while a considerable amount of material is wasted upon slicing silicon wafers. Also, during the growth of silicon single crystals a certain concentration of dopants has to be incorporated in order to induce either extrinsic p-type or n-type conductivity. Despite the energy of the band gap of silicon fitting quite well with the optimal energy determined by the solar spectrum, silicon is an indirect semiconductor whose photonic electron transition from the valence band to the conduction band needs to be assisted by a phononic momentum transfer. This requirement of coincidence between a photon of appropriate energy being absorbed and a phonon transferring impulse to the electron leads to a reduced probability of events of photoelectric charge carrier generation. Correspondingly, the absorber thickness must be augmented in order to compensate the low absorption coefficient. These aforementioned issues, eventually, gave rise to reconsider photovoltaic technologies, being both economical and ecological reasonably applicable in a more widely spread manner. These demands have paved the way for thin film solar cell technologies using compound semiconductors. Those compound semiconductors are intrinsically conductive, and they possess a higher absorption coefficient due to direct electron band transitions (Fig. 4.1).
关键词： kesterite-type,chalcopyrite-type,absorber layer materials,light absorption,microstructure analysis,photovoltaic technologies,solar energy conversion efficiency,compound semiconductors,thin film solar cells,silicon-based solar cells
更新于2025-09-16 10:30:52
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Preparation of highly transparent conductive aluminum-doped zinc oxide thin films using a low-temperature aqueous solution process for thin-film solar cells applications
摘要： In this work, we developed a facile route to fabricate highly transparent conductive AZO thin films by using an aqueous solution process followed by an ultraviolet (UV) exposure technique at an annealing temperature as low as 200 °C, where the aluminum citrate complex was used as the Al doping source. Various of deposition parameters in the AZO thin films fabrication process were studied and optimized. The mechanisms on UV exposure and heat treatment to the conductivity improvement and conductivity stability of the AZO films were analysed. Results showed that the AZO thin films under the best parameters conditions demonstrated an optical transmittance higher than 85% in the visible spectra region and a lowest electrical resistivity of 4.8 × 10?3 Ω cm, while exhibited densely oriented columnar grains and uniform surface morphology as well as uniform composition distribution. The UV exposure could remove carbon species from the surface of the AZO thin films to reduce oxygen-related defects and release free carriers at the boundaries and interfaces, thereby improving the conductivity of the AZO thin films. The simultaneous treatment of the AZO thin film by ultraviolet exposure and heat treatment could remove carbon species at a deeper thickness, thereby improving the conductive stability of the AZO thin films. Kesterite Cu2ZnSnS4 thin film solar cells incorporating the optimal AZO thin films as top electrodes demonstrated a best power conversion efficiency (PCE) of 7.15%, which was comparable to the PCE value obtained by using the sputtering deposited AZO thin films as top electrodes.
关键词： AZO thin films,Aqueous solution process,Photoelectric properties,Ultraviolet exposure,Cu2ZnSnS4 thin film solar cells
更新于2025-09-16 10:30:52
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TiO2/Cu2O heterojunctions for photovoltaic cells application produced by reactive magnetron sputtering
摘要： In this work, TiO2/Cu2O heterostructures were obtained in a two-step process with a direct current magnetron sputtering method. We studied the morphological properties and composition of the thin films by scanning electron microscopy. Optical properties and energy bands at the heterojunction were recorded using a spectrophotometer. Additionally, the current–voltage characteristics examined in both total darkness and with illumination were estimated to have an irradiation (radiation flux divided by area) of 1000 W/m2.
关键词： Titanium dioxide,Thin film,Solar cells,Cuprous oxide,Photovoltaic cells
更新于2025-09-16 10:30:52
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Investigations on a-Si: H thin film solar cells by RF-PECVD
摘要： Hydrogenated amorphous silicon thin film solar cells have become the low cost alternative to the crystalline technology because of their simple structure, low material consumption, low process temperature and low cost of production. Radio-frequency powered multi-chamber plasma enhanced chemical vapour deposition system has been used to develop the intrinsic and doped layers of the a-Si:H. Multi-chambers enabled us to optimize the individual layers of the device using dedicated chambers which avoids cross-contamination during process. In this study, investigations have systematically been carried out to study the fabrication process and understand the correlation between the process parameters and the property dependence for achieving maximum conversion efficiency of the cell. Amorphous Si:H solar cells have been produced with a maximum cell efficiency of 6.52% with a Voc of 880 mV, Isc of 11.33 mA/cm2 and ff of 65%. This paper also discusses about the possible potentials for enhancing the device performance further.
关键词： Thin film solar cells,a-Si:H,PECVD
更新于2025-09-16 10:30:52
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Spray pyrolysis deposited CuSbS2 absorber layers for thin-film solar cells
摘要： CuSbS2 thin films were fabricated by spray pyrolysis from metal chloride aqueous solutions, followed by a post-deposition sulfurization step. The structural, chemical, optical and electrical properties of CuSbS2 and the effect of various sulfurization temperatures on CuSbS2 thin film have been systematically studied. We used a two-step sulfurization method. Step 1 at lower temperature was to encourage complete saturation of the as-deposited film with sulfur vapor. And step 2 at higher temperature was to promote the formation and crystallization of CuSbS2. The sulfurization temperature of step 2 is very important for the formation of device-grade CuSbS2 films. With the increase in sulfurization temperature, impurities such as Sb2S3 decreased and the crystallinity of CuSbS2 improved. Until 400 °C, impurities disappeared and phase-pure well-crystallinity CuSbS2 thin films were obtained. When the sulfurization temperature is higher than 400 °C, CuSbS2 gradually changes to Cu3SbS4. The CuSbS2 films sulfurized at 400 °C with optimum band gap of 1.53 eV are p type, and absorption coefficient is larger than 105 cm?1 in the visible light wavelength range. The temperature dependence of electrical conductivity of CuSbS2 has been studied for the first time. At measurement temperatures higher than 140 K the electrical conductivity of the CuSbS2 film is dominated by band conduction and nearest neighbor hopping (NNH). However, at temperatures below 140 K the conduction is predominantly affected by variable range hopping (VRH). Finally, thin-film solar cells based on the sprayed CuSbS2 absorber layers with a maximum photoelectric conversion efficiency of 0.34% have been fabricated.
关键词： sulfurization,CuSbS2,thin-film solar cells,spray pyrolysis,electrical conductivity
更新于2025-09-16 10:30:52
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Incorporation of coppera??indium back-end layers in the solution-based Cu(In, Ga)Se <sub/>2</sub> films: enhancement of photovoltaic performance of fabricated solar cells
摘要： The morphology and photovoltaic properties of the solution-based Cu(In, Ga)Se2 films are effectively improved via the incorporation of copper-indium back-end layers in the precursor films. The effects on the concentrations of bimetal-ions solutions to prepare copper-indium back-end layers are investigated in this study. The incorporation of copper-indium back-end layer in the precursor film enhances the internal diffusion between gallium-ions and indium-ions during selenization reaction. Hence, the porous structure in the back-contact region of prepared CIGS films becomes densified, and the bandgap distribution of films shows a gradient profile. The densified morphology and gradient bandgap reduce the carrier recombination and improve the carrier collection of solar cells. In contrast to the pristine precursor film, the precursor film with a copper-indium back-end layer increase the conversion efficiency of prepared solar cells from 8.34% to 11.13%. The enhancement of conversion efficiency is attributed to the improvement of short-circuit current density and fill factor from 25.70 mA cm?2 and 57.65% to 31.79 mA cm?2 and 65.70%, respectively. This study reveals that the photovoltaic properties of solution-based CIGS solar cells can be improved significantly via the incorporation of copper-indium back-end layers into the precursor films.
关键词： photovoltaic device,thin-film solar cells,non-vacuum process,CIGS
更新于2025-09-16 10:30:52
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Using Deep Machine Learning to Understand the Physical Performance Bottlenecks in Novel Thin‐Film Solar Cells
摘要： There is currently a worldwide effort to develop materials for solar energy harvesting which are efficient and cost effective, and do not emit significant levels of CO2 during manufacture. When a researcher fabricates a novel device from a novel material system, it often takes many weeks of experimental effort and data analysis to understand why any given device/material combination produces an efficient or poorly optimized cell. It therefore takes the community tens of years to transform a promising material system to a fully optimized cell ready for production (perovskites are a contemporary example). Herein, developed is a new and rapid approach to understanding device/material performance, which uses a combination of machine learning, device modeling, and experiment. Providing a set of electrical device parameters (charge carrier mobilities, recombination rates, trap densities, etc.) in a matter of seconds thus offers a fast way to directly link fabrication conditions to device/material performance, pointing a way to further and more rapid optimization of light harvesting devices. The method is demonstrated by using it to understand annealing temperature and surfactant choice and in terms of charge carrier dynamics in organic solar cells made from the P3HT:PCBM, PBTZT-stat-BDTT-8:PCBM, and PTB7:PCBM material systems.
关键词： charge carrier mobility,machine learning,organic solar cells,thin film solar cells,drift diffusion
更新于2025-09-12 10:27:22