研究目的
To study the fabrication process and understand the correlation between the process parameters and the property dependence for achieving maximum conversion efficiency of the cell.
研究成果
The a-Si:H p–i–n solar cells have been fabricated using multi-chamber RF-PECVD system on FTO coated glass at a process temperature of 250°C. The properties of the intrinsic as well as doped layers of the a-Si:H material such as electrical conductivity, optical band gap and layer thickness have been optimized by systematically studying the respective doping efficiency, RF power, and deposition rate. The I-V characteristics of the fabricated a-Si:H thin film solar cells of 25 X 25 mm2 size resulted with a maximum cell conversion efficiency of 6.52%, Voc of 880 mV, Jsc of 11.33 mA/cm2, and FF of 65%.
研究不足
The metastability of a-Si, called the Staebler-Wronski effect, limits the efficiency improvement of a-Si solar cells.
1：Experimental Design and Method Selection:
The study used a Radio-frequency powered multi-chamber plasma enhanced chemical vapour deposition system (RF-PECVD) to develop the intrinsic and doped layers of the a-Si:H.
2：Sample Selection and Data Sources:
Various glass substrates such as float glass, Schott glass, and TCO coated glass of size 25 X 25 mm2 have been used for development and optimization of the p-, i-, and n- layer of a-Si:H thin film solar cell.
3：List of Experimental Equipment and Materials:
The fully automated PECVD system, through SCADA software integrated with PLC/user interface, consists of FIVE process chambers supported by individual magnetic arms for handling the substrates that are connected to an additional central transfer chamber.
4：Experimental Procedures and Operational Workflow:
The process parameters implemented for developing and optimizing the individual layers as well as the a-Si:H solar cells are given in the table
5：Data Analysis Methods:
Thickness of the deposited films was measured using stylus profiler (Veeco-Dektak 6M). Electrical properties of the films were studied by co-planar conductivity measurements (Keithley 6487 and Agilent B- 1500 semiconductor device analyzer).
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