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Mg-Doped ZnO Nanoparticle Films as the Interlayer between the ZnO Electron Transport Layer and InP Quantum Dot Layer for Light-Emitting Diodes
摘要： Because the wide emission spectrum tunability which range from the visible region to the near-infrared, InP based colloidal quantum dots (QDs) show great promise for use in next-generation full-color displays and solid state lighting. The performance-improved InP QD based light-emitting devices (QLEDs) were fabricated by using Mg doped-ZnO nanoparticles (ZnMgO NPs) as an interlayer between ZnO electron transport layer and active InP QD layer. It is found that ZnMgO NPs can reduce electron injection and suppress exciton quenching which is attributed to the improvement of charge balance in the devices. We successfully demonstrated higher maximum current efficiencies of 5.46 and 5.91 cd/A than the references (2.31 and 2.36 cd/A) without the ZnMgO NP layer in highly efficient red and green QLEDs, respectively. These results signify an effective approach to improve heavy-metal-free QLEDs for commercial applications.
关键词： InP quantum dots,Mg doped-ZnO,electron transport layer,light-emitting diodes,charge balance
更新于2025-09-23 15:21:01
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Fluorescent Properties of Gd-Doped Zno Nanonporous Networks & Its Application in Optical Biosensing
摘要： This research presents a study of the fluorescent properties of new materials based on gadolinium-doped zinc oxide nanoporous networks obtained by sol gel method on the surface of microcrystalline silicon. The effect of co-doping of different concentrations of Gd ions on the emission properties of ZnO nanoparticles has been investigated. Emissions of such biomolecules as protein, amino acids and porphyrin and its detection limits were studied for the purpose of practical application of Gd-doped ZnO nanonporous networks as an element of an optical biosensor technology.
关键词： sol-gel method,nanoporous networks,optical biosensing,fluorescent properties,Gd-doped ZnO
更新于2025-09-23 15:21:01
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High-Pressure Electronic Structure and Optical Properties of N-Doped ZnO
摘要： The electronic structures and optical properties of N-doped ZnO under high pressure have been investigated using first-principles methods. The pressure effects on the lattice parameters, electronic band structures, and partial density of states (PDOS) of crystalline N-doped ZnO are calculated up to 8 GPa. The lattice parameters a, and c are decreases by 0.062 and 0.091 ?, respectively. Moreover, the evolution of the dielectric function, absorption coefficient (α(ω)), reflectivity (R(ω)), and the real part of the refractive index (n(ω)) at high pressure are also presented.
关键词： N-doped ZnO,density functional theory,optical properties,high pressure
更新于2025-09-23 15:21:01
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Influence of boron doping amount on properties of ZnO:B films grown by LPCVD technique and its correlation to a-Si:H/??c-Si:H tandem solar cells
摘要： Boron-doped ZnO:B (BZO) films with various doping levels have been prepared on large-area substrates by low pressured chemical vapor deposition technique. The influence of doping amount on electrical and optical properties of BZO films has been investigated. It is found that ZnO phase synthesis is hardly affected when the doping gas flow varies from 25 to 100 sccm, but the preferential orientation of grain growth is influenced progressively. It is interesting that there should be a threshold value of doping gas flow of 75 sccm that will cause an abrupt reduction in grain size of BZO and therefore dramatically weakens the light-scattering capacity of the film. It is also noted that the boron atoms doped in BZO films are partly electrically active, and moreover, the heavier doping level, the more inactive B atoms, which not only reduces carrier mobility, but also boosts a stronger light absorption due to enhanced impurity scattering. When the doping gas flow is 75 sccm, the BZO film can achieve a proper comprehensive property with a Rsq of 15.2 Ω/□, an average haze of 21.3% and an average TT of 80.2%. Using this film as the front electrode of a-Si:H/μc-Si:H solar cell, the optimum performance of the solar cell with a Jsc of 12.68 mA/cm2, a Voc of 1.385 mV, and an initial efficiency (η) of 11.83% was obtained.
关键词： a-Si:H/μc-Si:H tandem solar cells,Boron-doped ZnO:B films,doping amount,LPCVD technique,electrical and optical properties
更新于2025-09-23 15:21:01
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Processing and Study of Optical and Electrical Properties of (Mg, Al) Co-Doped ZnO Thin Films Prepared by RF Magnetron Sputtering for Photovoltaic Application
摘要： In this study, high transparent thin films were prepared by radio frequency (RF) magnetron sputtering from a conventional solid state target based on ZnO:MgO:Al2O3 (10:2 wt %) material. The films were deposited on glass and silicon substrates at the different working pressures of 0.21, 0.61, 0.83 and 1 Pa, 300 °C and 250 W of power. X-ray diffraction patterns (XRD), atomic force microscopy (AFM), UV-vis absorption and Hall effect measurements were used to evaluate the structural, optical, morphological and electrical properties of thin films as a function of the working pressure. The optical properties of the films, such as the refractive index, the extinction coefficient and the band gap energy were systematically studied. The optical band gap of thin films was estimated from the calculated absorption coefficient. That parameter, ranged from 3.921 to 3.655 eV, was hardly influenced by the working pressure. On the other hand, the lowest resistivity of 8.8 × 10?2 ? cm was achieved by the sample deposited at the lowest working pressure of 0.21 Pa. This film exhibited the best optoelectronic properties. All these data revealed that the prepared thin layers would offer a good capability to be used in photovoltaic applications.
关键词： working pressure,Al doped ZnO-MgO powder,RF magnetron sputtering,photovoltaic applications,thin films,solid-state method,optoelectronic properties
更新于2025-09-23 15:21:01
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Effects of lithium doping on: microstructure, morphology, nanomechanical properties and corrosion behaviour of ZnO thin films grown by spray pyrolysis technique
摘要： Li-doped ZnO thin films were prepared on glass substrate by a chemical spray pyrolysis method, in the temperature of 460 °C. The effects of Li content on the microstructural, morphological and mechanical characteristics of the doped (ZnO:Li) thin films were also examined. The XRD study showed a sharp preferred c-axis orientation and showed that (ZnO:Li) films have a würtzite structure and grow principally along the c-axis orientation with a preferred orientation (002). The film morphology was examined by (AFM) and (SEM). Results of SEM observations showed that sprayed thin films, exhibited uniform and harmonious texture. Furthermore, ZnO:Li thin films revealed uniform and spherical shaped crystallites with an approximate medium size of 200 nm. AFM characterization demonstrated an amelioration of the surface roughness of the ZnO:Li thin films. The mechanical characteristics of ZnO:Li thin films have been investigated by the nano-indentation experiment. It has been found that the addition of lithium enhances the hardness and Young’s modulus. On the other hand, the corrosion behaviour of Li-doped thin films is examined in chloride solutions. The electrochemical experiments confirmed that the lithium doping could ameliorate the anti-corrosion performance.
关键词： nanomechanical properties,morphology,microstructure,spray pyrolysis,thin films,Li-doped ZnO,corrosion behaviour
更新于2025-09-23 15:21:01
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Designed synthesis of microstructure and defect-controlled Cu-doped ZnO-Ag nanoparticles: exploring high-efficiency sunlight-driven photocatalysts
摘要： Cu-doped ZnO nanoparticles composited with Ag were synthesized by one-step sol-gel method in this work, aiming at highly photocatalytic activity and possible application under sunlight (especially near ultraviolet and visible light regions, 300-760 nm) irradiation. Scanning electron microscopy (SEM) shows that the introduction of Cu inhibits particle aggregation. X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) reveal that Zn(Cu)O-Ag nanoparticles (CZA NPs) are composed of metallic Ag (Ag0) and Zn(Cu)O nanocrystals; while at the Cu concentration of higher than 2%, a little CuO nanocrystals appear. Transmission electron microscopy (TEM) results evidenced the well-defined formation of Zn(Cu)O-Ag and/or CuO-ZnO-Ag heterojunctions. UV–vis spectra display that the visible absorption of the samples is obviously enhanced after the Cu introduction. At a low Cu doping level (0.2%) and moderate Cu concentration (3~5%), the blue and green photoluminescence (PL) emission strength of the samples become very weak in comparison to other samples, indicative of the high separation of photogenerated electron-hole pairs. Reasonably, the higher photocatalytic degradation (complete degradation of methylene blue (MB) and methyl orange (MO) within 40 minutes under the simulated sunlight irradiation) are achieved in these cases: low Cu doping level (0.2%) and moderate Cu concentration (3~5%) in CZA NPs. Further, we checked the effects of other factors on the photocatalytic degradation for possible application. Our results suggest that one well-designed composite type such as element-doped Zn(M)O-Ag nano-heterojunction or complicated metal oxide-ZnO-Ag nanocomposites possessing suitable band structures for the separation and utilization of photo-generated carriers, will remarkably improve the photocatalytic performance of nano-ZnO under sunlight irradiation.
关键词： ZnO-Ag nanocomposites,heterojunction,sunlight irradiation,Cu-doped ZnO,photocatalytic degradation
更新于2025-09-23 15:19:57
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Fabrication and Characterization of Ni-Doped ZnO Nanorod Arrays for UV Photodetector Application
摘要： In this work, the structure morphologies, lattices, and optical properties of zinc oxide (ZnO) nanorods (NRs) with various amounts of nickel (Ni) dopants were investigated and explored. The 100 nm ZnO seed layer was grown on the Corning glass substrate by the radio frequency (RF) magnetron sputtering technique, and the chemical bath deposition (CBD) method was used to grow NR arrays. It was found that the Ni concentration of the sample is 1.06 at% by EDX spectra examination. All the NRs exhibited a hexagonal wurtzite structure and preferentially grew along the c-axis on the substrate. Additionally, the ultraviolet (UV) photodetectors (PDs) with Ni-doped ZnO (NZO) NRs based on metal-semiconductor-metal (MSM) structure were fabricated through a photolithography process. Then, such a sample was annealed at 500 °C to obtain good performance and reduced oxygen vacancy (～560 nm). The results showed that the NZO NRs were with an excellent photosensitivity for UV PD applications and a faster rise/decay time than pure ZnO. Furthermore, with a 3 V applied bias and 380 nm UV illumination, the sensitivities of the fabricated ZnO PDs with different Ni contents (0, 4, and 8 mM) were 71.45, 393.04, and 238.75, respectively.
关键词： nanorod arrays,photolithography process,chemical bath deposition,UV photodetector,Ni-doped ZnO
更新于2025-09-23 15:19:57
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Investigation of physical properties of F-and-Ga co-doped ZnO thin films grown by RF magnetron sputtering for perovskite solar cells applications
摘要： F-and-Ga co-doped ZnO films were sputter-deposited on glass substrates by RF magnetron sputtering method. The fabricated films were characterized by different techniques. It was found that all the films were poly-crystalline with a hexagonal wurtzite structure with a c-axis preferred orientation of growth. The effect of the substrate temperature on the surface morphology, electrical and optical properties of the films was also investigated. The optimal growth temperature was found to be 440 oC which led to the optimal film with the resistivity of 6.81 × 10?4 Ωcm, carrier concentration of 2.61 × 1020 cm?3, mobility of 35.1 cm2/V, over-90% transmittance in the region of 400–1200 nm and a wide optical bandgap of 3.49 eV. This optimal film was employed in as the front contact in perovskite solar cells and resulted in a high power-conversion efficiency of 15.32%. This indicates that such a film can be promisingly useful for high-performance thin-film solar cells.
关键词： High mobility,Thin-film solar cells,F-and-Ga co-doped ZnO films,Magnetron sputtering
更新于2025-09-23 15:19:57
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ZnAl2O4 decorated Al-doped ZnO tetrapodal 3D Network: Microstructure, Raman and Detailed Temperature Dependent Photoluminescence Analysis
摘要： 3D networks of Al-doped ZnO tetrapods decorated with ZnAl2O4 particles synthesised by the flame transport method were investigated in detail by optical techniques combined with morphological/structural characterisation. Low temperature photoluminescence (PL) measurements revealed spectra dominated by the near band edge (NBE) recombination in the UV region, together with broad visible bands which peak position shifts depending on the ZnO:Al mixing ratios. A close inspection of the NBE region evidences the effective doping of the ZnO structures with Al, as corroborated by the broadening and shift of its peak position towards the expected energy associated with exciton bound to Al. Both temperature and excitation density-dependent PL results point to an overlap of multiple optical centres contributing to the broad visible band, with peak position dependent on the Al content. While in the reference sample the wavelength of the green band keeps unchanged with temperature, in the composites the deep level emission showed a blue shift with increasing temperature, likely due to the distinct thermal quenching of the overlapped emitting centres. This assumption was further validated by the time-resolved PL data, which clearly exposed the presence of more than one optical centre in this spectral region. PL excitation analysis demonstrated that the luminescence features of the Al-doped ZnO/ZnAl2O4 composites reveal noticeable changes not only in the deep level recombination, but also in the material’s bandgap, when compared with the ZnO reference sample. At room temperature, the ZnO reference sample exhibits free exciton resonance at ~3.29 eV, whereas the peak position in the Al-doped ZnO/ZnAl2O4 samples occurs at ~3.38 eV due to the Burstein-Moss shift, commonly observed in heavily doped semiconductors. Considering the energy shift observed and assuming a parabolic conduction band, a carrier concentration of ~1.82 ×1019 cm-3 was estimated for the Al-doped ZnO/ZnAl2O4 samples.
关键词： Al-doped ZnO,Burstein-Moss effect,tetrapodal 3D network,ZnAl2O4,photoluminescence
更新于2025-09-23 15:19:57