研究目的
The main aim of this work is devoted to the fabrication of targets by the conventional solid state method from ZnO, MgO and Al2O3 powders to obtain Mg:Al (10:2 wt %) co-doped ZnO targets with relatively high MgO content of 10 wt %. The optoelectronic performance of Al doped ZnO-MgO (AMZO) thin films deposited from the low-cost target by radio frequency (RF) magnetron sputtering are also investigated. In addition, the effects of working pressure on structural, optical and electrical properties were examined systematically.
研究成果
AMZO thin films were successfully deposited on Corning glass by RF magnetron sputtering from a home-made fabricated 4-inch diameter ZnO-MgO:Al2O3 (10:2 % wt) target using the conventional solid-state method. The films exhibited good structural, optical, and electrical properties, making them suitable for optoelectronic and photovoltaic applications. The study demonstrated the possibility of fabricating mechanically stable and reproducible home-made targets that present enough quality to achieve thin films with appropriate properties for use in optoelectronic devices.
研究不足
The study acknowledges the potential for optimization in the fabrication process of the targets and the deposition conditions of the thin films to further enhance their optoelectronic properties. The influence of higher working pressures and different doping concentrations on the properties of the thin films could be explored in future studies.
1:Experimental Design and Method Selection:
The study involved the fabrication of 4-inch size diameter ceramic targets by the conventional solid-state reaction method from a mixture of ZnO, MgO, and Al2O3 powders. The powders were crushed, blended, treated at 1050 °C, crushed again, sifted, mixed with ethanol, pressed using a cold isostatic press, and sintered to make hard pellets.
2:Sample Selection and Data Sources:
AMZO thin films were deposited on Corning 7059 glass and silicon substrates using a UNIVEX 450B magnetron sputtering system with confocal geometry. The substrates were cleaned with isopropyl alcohol and dried by blowing nitrogen over them.
3:List of Experimental Equipment and Materials:
The equipment used included a Philips X’Pert diffractometer for XRD measurements, an AFM system for surface morphology observation, a PerkinElmer Lambda 1050 UV/Visible/NIR spectrophotometer for optical reflectance and transmittance measurements, and an ECOPIA HMS-3000 Hall effect measurements system for electrical properties testing.
4:Experimental Procedures and Operational Workflow:
The sputtering chamber was evacuated to 10?5 Pa before the deposition process. The films were deposited at different working pressures ranged from
5:21 to 82 Pa, with argon as the working gas, and the RF power and substrate temperature were fixed at 250 W and 300 °C, respectively. Data Analysis Methods:
The structural, optical, and electrical properties of the thin films were analyzed using XRD, AFM, UV-vis absorption, and Hall effect measurements.
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