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Extrinsic heavy metal atom effect on the solid state room temperature phosphorescence of cyclic triimidazole
摘要： Four coordination compounds [Zn3(CH3COO)6(H2O)2](TT)2, [Cd(H2O)6](ClO4)2(TT)2, [Cd(H2O)6](BF4)2(TT)2, [Zn(H2O)6](BF4)2(TT)2 (1-4) accommodating triimidazo[1,2-a:1',2'-c:1'',2''-e][1,3,5]triazine (TT) as a guest in their crystal lattice are isolated and fully photophysically and structurally characterized. Their emission properties are compared with those of afterglow TT and interpreted taking into account the heavy atom effect and crystal packing similarities and differences. In the case of 1, due to the closeness of the TT H-aggregates arrangement with that of the phosphor's pure phase, the observed intensification of the phosphorescent emission at the expense of the prompt one is attributed to the extrinsic heavy atom effect of Zn. In 2 and 3, the heavier Cd atom is responsible for a decrease in the lifetimes of the afterglow emission, despite the presence of tightly overlapped H-dimers in the crystal structure. Finally for 4, isostructural with 3, the Zn atom reveals in RTUP lifetime comparable with that of 1.
关键词： extrinsic heavy atom effect,H aggregates,time resolved photoluminescence,room temperature ultralong phosphorescence,single crystal XRD
更新于2025-09-23 15:23:52
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CdSe/CdMnS Nanoplatelets with Bilayer Core and Magnetically Doped Shell Exhibit Switchable Excitonic Circular Polarization: Implications for Lasers and Light-Emitting Diodes
摘要： We utilized time-resolved photoluminescence (TRPL) spectroscopy to study the excitonic circular polarization (PX) from CdSe/CdMnS core/shell nanoplatelets (NPLs) with a bilayer core. This allows an extensive study of the emission dynamics as a function of magnetic ?eld, temperature, doping concentration, and excitation wavelength. In the presence of an external magnetic ?eld, pulsed excitation below the shell gap results in near-zero excitonic circular polarization PX at all time delays. In contrast, pulsed excitation with photon energy larger than the shell gap results in a rapid (100 ps) buildup of the excitonic circular polarization which subsequently remains constant at a level of up to 40%. We propose a model to describe the dynamics which takes into account the exchange interaction between carrier and magnetic ion (Mn) spins. The studied system exhibits a fast switchable excitonic circular polarization, implying possible applications in lasers and light emitting diodes.
关键词： spd exchange interaction,quasi-2D,time-resolved photoluminescence,nanoplatelets,magneto-optical switch
更新于2025-09-23 15:21:01
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Spatial range of the plasmonic Dicke effect in an InGaN/GaN multiple quantum well structure
摘要： The plasmonic Dicke effect means a cooperative emission mechanism of multiple light emitters when they are simultaneously coupled with the same surface plasmon (SP) mode of a metal nanostructure to achieve a higher collective emission efficiency. Here, we compare the enhancements of emission efficiency among a series of SP-coupled InGaN/GaN quantum-well (QW) structures of different QW period numbers to show an emission behavior consistent with the plasmonic Dicke effect. The relative enhancement of overall emission efficiency increases with QW period number until it reaches a critical value, beyond which the enhancement starts to decrease. This critical QW period number corresponds to the effective depth range of the plasmonic Dicke effect in a multiple-QW system. It also represents an optimized QW structure for maximizing the SP coupling effect. Internal quantum efficiency and time-resolved photoluminescence are measured for comparing the enhanced emission efficiencies of blue and green QW structures with different QW period numbers through SP coupling induced by surface Ag nanoparticles.
关键词： multiple quantum well,internal quantum efficiency,Ag nanoparticle,surface plasmon coupling,plasmonic Dicke effect,time-resolved photoluminescence
更新于2025-09-23 15:21:01
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Fluorescence quenching of molybdenum disulfide quantum dots for metal ion sensing
摘要： In the present work, we have used hydrothermally synthesized in situ functionalized MoS2-QDs for a sensitive (limit of detection ~ 2.06 μM) and selective detection of Fe3+ ions. A detailed study of fluorescence quenching behavior for MoS2-QDs in the presence of Fe3+ ions has been performed using the Stern–Volmer plot, modified Stern–Volmer plot, and time-resolved photoluminescence measurements. Absorption based titration spectra and time-resolved photoluminescence measurements confirmed the fluorescence quenching is static with three decay times originated from the three different fluorescing sites. Interestingly, it is found that emission spectra consist of three bands at positions ~ 450 nm (P1, ~ 2.76 eV), ~ 475 nm (P2, ~ 2.61 eV), and ~ 503 nm (P3, ~ 2.46 eV). These peaks show a systematic quenching with the increasing concentration of Fe3+ ions. Quenching constants corresponding to these emission bands are found of the order of ~ 103 M?1. Large values of bimolecular quenching constants (~ 1011 M?1 s?1) suggest a strong binding interaction between MoS2-QDs and Fe3+ ions. Furthermore, to understand the fluorescence quenching of MoS2-QDs in the presence of Fe3+ ions, a ground-state complex formation-based mechanism has been proposed and elucidated in detail.
关键词： Nanostructures,UV/Vis spectroscopy,Metal ion sensing,Time-resolved photoluminescence,Fluorescence spectroscopy
更新于2025-09-23 15:21:01
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Realization of high-quality InGaAs/GaAs quantum dot growth on Ge substrate and improvement of optical property through ex-situ ion implantation
摘要： Epitaxial growth of III-V heterostructures on non-native substrates such as Silicon (Si) or Germanium (Ge) is one of the promising research topics for the last two decades. The interface between polar III-V semiconductors and non-polar substrates (Si or Ge) plays a crucial role in monolithic integration. However, there is an anticipation of epitaxial GaAs growth on Ge substrate because of the lower mismatch of lattice constants and thermal expansion coefficients between them. Therefore, the high-quality growth of III-V semiconductor heterostructures on Ge substrates would overcome the impediment to Si-photonics, where the monolithic integration of optoelectronic device structures can be done using a Ge graded layer on Si. Here, we have explored the epitaxial growth of multi-layer InGaAs/GaAs quantum dot heterostructures on Ge substrates and compared the optical and structural properties with the QDs grown on GaAs substrate. The optical properties of all samples are investigated with the help of photoluminescence (PL) and time-resolved photoluminescence (TRPL), whereas the morphology of the QDs is observed through cross-sectional transmission electron microscopy (XTEM) images. An enhancement in the optical characteristics (PL peak wavelength, activation energy, carrier lifetime) is found for the QDs grown on Ge substrate with the super-lattice buffer (SLB) layer. The minimization of defects and dislocations in the heterostructure is also realized for the structure with the SLB layer. Furthermore, a two-fold enhancement in PL intensity and 24 meV increment in activation energy is achieved through ex-situ H ion-implantation, which approached the values obtained for the QD heterostructure grown on GaAs substrate.
关键词： Photoluminescence,Molecular beam epitaxy,Time-resolved photoluminescence,Silicon photonics,Quantum dots,Ion implantation
更新于2025-09-23 15:19:57
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Time-resolved photoluminescence spectral analysis of phonon-assisted DAP and e-A recombination in N+B-doped <i>n</i> -type 4H-SiC epilayers
摘要： It is crucial to clarify the roles of phonon-assisted donor-acceptor pairs (DAPs) and free-to-acceptor (e-A) emissions in n-type 4H-SiC doped with nitrogen (N) and boron (B), where N and B induce the shallow donor and the D center (deep B) acceptor levels, respectively, in order to understand the complicated carrier recombination mechanism, as well as developing fluorescent SiC with a high color rendering index by controlling the ratio of the two overlapped emissions. Here, time-resolved photoluminescence (TRPL) spectral analyses were performed, in which phonon-assisted DAPs and e-A components were individually recognized. The D center-related green luminescence (1.6–2.8 eV) shows a non-exponential decay followed by a very slow decay in TRPL measurements at room temperature (RT). It emerges that most of the DAP emission intensities decay much faster than e-A emissions and contribute to what is initially fast and non-exponential decay at low temperatures, while the slow decay at RT is mainly from e-A emissions. At a much higher temperature, such as 473 K, only the e-A emission remains and the decay transforms from non-exponential to exponential behavior. High-temperature thermal quenching of e-A emissions exhibits different behaviors for samples with differing B doping concentrations. An activation energy of 0.6 eV was estimated from the Arrhenius plot of e-A emission intensity from a B-doped sample, which matches the D center level. This indicates that the hole thermal emission rate is greatly enhanced at a high temperature, which accelerates the decay of e-A emission intensity at high temperatures.
关键词： donor-acceptor pair,time-resolved photoluminescence,silicon carbide,D center,boron doping
更新于2025-09-19 17:15:36
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Temperature dependence of inter-dot electron-spin transfer among laterally coupled excited states in high-density InGaAs quantum dots
摘要： The temperature dependence of interdot spin-transfer dynamics at laterally coupled excited states (ESs) in high-density InGaAs quantum dots (QDs) was studied using spin- and time-resolved photoluminescence spectroscopy. At low temperatures below 100 K, temporary suppression of electron-spin polarization decay due to selective relaxation of minority spins from emissive ESs to lower-energy states in neighboring QDs was observed. In the temperature range from 20 K to 140 K, thermal activation of electron spins from lower-energy QD states to higher-energy states via interdot transfer prevents the aforementioned selective relaxation of minority spins, leading to a faster decay of electron-spin polarization during light emission. At high temperatures above 140 K, reinjection of depolarized electron spins from barriers after thermal escape from QD ESs accelerates the further decay of the electron-spin polarization, wherein the electron spins can be activated via ladderlike interdot transfer. These findings indicate that the suppression of reinjection of electron spins from barriers in a high-density QD system is crucial for maintaining high electron-spin polarization during light emission at high temperatures.
关键词： electron-spin polarization,InGaAs quantum dots,interdot spin-transfer dynamics,spin- and time-resolved photoluminescence spectroscopy,temperature dependence
更新于2025-09-19 17:13:59
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Internal quantum efficiencies of AlGaN quantum dots grown by molecular beam epitaxy and emitting in the UVA to UVC ranges
摘要： AlyGa1?yN quantum dots (QDs) have been grown by molecular beam epitaxy on AlxGa1?xN (0001) using a 2-dimensional–3-dimensional growth mode transition that leads to the formation of QDs. QDs have been grown for Al compositions y varying between 10% and 40%. The influence of the active region design [composition y, QD height, and bandgap difference (ΔEg) between the AlxGa1?xN cladding layer and the AlyGa1?yN QDs] is discussed based on microscopy, continuous wave photoluminescence (PL), and time-resolved PL (TRPL) measurements. In particular, increasing y leads to a shift of the QD emission toward shorter wavelengths, allowing covering a spectral range in the UV from 332 nm (UVA) to 276 nm (UVC) at room temperature (RT). The low-temperature (LT) internal quantum efficiency of the QD ensembles was estimated from TRPL experiments at 8 K and values between 11% and 66% were deduced. The highest internal quantum efficiency (IQE)-LT is found for the QDs with higher Al content y. Then, the PL spectrally integrated intensity ratios between RT and LT were measured to estimate the IQE of the samples at RT. The PL ratio is higher for larger ΔEg, for QDs with y of 0.1 or 0.2, and high PL intensity ratios up to 30% were also measured for QDs with larger y of 0.3 and 0.4. RT IQE values between 5% and 20% are deduced for AlyGa1?yN QDs emitting in the 276–308 nm range.
关键词： AlGaN,internal quantum efficiency,UVC,quantum dots,molecular beam epitaxy,time-resolved photoluminescence,photoluminescence,UVA
更新于2025-09-12 10:27:22
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Electric‐Withdrawing Anchor Group of Sensitizer for Dye‐Sensitized Solar Cells, Cyanoacrylic Acid or Benzoic Acid?
摘要： High electron injection efficiency is important for further development of dye-sensitized solar cells (DSSCs). Different electron acceptors have different electron injection capabilities, which affect device performance. Here, this article report on the effects of two organic triazatruxene (TAT)-based donor-π-bridge-acceptor sensitizers applied in DSSCs. The sensitizers had either rigid 4-ethynyl benzoic acid (EBA) or Z-type cyanoacrylic acid (CA) as their electron acceptor, denoted as ZL003 and ZL005, respectively. Time-resolved photoluminescence (TR-PL) spectroscopy was applied to reveal the electron transfer dynamics between the sensitizers and TiO2 films. Notably, ZL003 had higher electron injection efficiency compared with that of ZL005, which was consistent with the higher efficiency and photocurrent of devices based on the former. The dye loading of ZL003 was nearly twice as great as that of ZL005, which accounts for the lower photocurrent of the device. The charge recombination lifetimes for the two dyes were consistent with their open-circuit voltage. Consequently, the ZL003 based devices achieved a higher power conversion efficiency of 13.4% compared with only 7.2% for ZL005.
关键词： electron injection efficiency,time-resolved photoluminescence (TR-PL),dye-sensitized solar cells,electron acceptor
更新于2025-09-12 10:27:22
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revealed by time-resolved photoluminescence spectroscopy
摘要： We systematically investigate the recombination mechanism of photogenerated charge carriers in bulk CsPbBr3 by means of time-resolved photoluminescence (TR-PL) spectroscopy at low temperature and various laser excitation powers. A dynamic recombination model is proposed to describe the TR-PL that predicts the time-dependent exciton and free-charge populations. It provides a clear representation of competing mono- and bimolecular recombination processes. A decrease in carrier lifetime with increasing laser intensity was observed that was attributed to exciton-exciton scattering. A bimolecular recombination coef?cient of ～10?7 cm3/s was obtained for exciton recombination. As the concentration of photoexcited carriers increases, stronger exciton-exciton annihilation occurs. The exciton-exciton annihilation rate for CsPbBr3 is 3.63 × 10?7 cm3 s?1 at 10-mW laser power. Notably, the exciton-exciton annihilation rate in bulk material is comparable to that obtained for photoexcited CsPbBr3 nanoscale quantum dots.
关键词： carrier recombination,bimolecular recombination,exciton-exciton annihilation,time-resolved photoluminescence,CsPbBr3
更新于2025-09-12 10:27:22