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Tuning of the Optical Properties of the Transparent Conducting Oxide SrVO <sub/>3</sub> by Electronic Correlations
摘要： The vanadate SrVO3 is a transparent conductor perovskite with optical and electrical properties competing with those of the most-used indium tin oxide material. Although its charge density is comparable to that of metals, SrVO3 shows a plasma frequency below the visible range due to strong electronic correlations characterizing the electronic transport in this material and enhancing the effective mass. Therefore, the well-known interplay between the structure and the electronic properties of strongly correlated systems can be used in such transparent conductor to tune the optical properties, as the plasma frequency also depends on the effective mass. In this study, SrVO3 films are grown by pulsed laser deposition onto different lattice mismatched perovskite substrates such as SrTiO3, LaAlO3, and (LaAlO3)0.3(Sr2TaAlO6)0.7 at different growth temperatures. The structural, electronic, and optical properties are analyzed, illustrating the influence of the strain on the structure of the films and on a shift of the plasma frequency. The electronic correlations in this new group of transparent conducting oxides can be therefore used as a supplementary lever for the tuning of the functional properties.
关键词： transparent conducting oxides,vanadates,thin films,correlated materials,epitaxy
更新于2025-10-22 19:40:53
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Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
摘要： Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications as a high quality transparent conducting oxide layer. A potential application of these coatings is for enhancing the electrical properties of spacecraft thermal radiator coatings, where dissipating built-up static charge is crucial. In this work, the authors investigated the thickness-dependent electrical and optical properties of IO thin films synthesized by atomic layer deposition (ALD) with the aim of finding the optimum condition for coating radiator pigments. Trimethylindium and ozone were used as precursors for IO, while a tetrakis(dimethylamino)tin(IV) source was used for Sn doping to produce ITO. As-deposited IO films prepared at 140 °C resulted in a growth per cycle of ~0.46 ?/cycle and film resistivity as low as 1.4 × 10^{-3} Ω cm. For the case of ITO thin films, an ALD process supercycle consisting of 1 Sn + 19 In cycles is shown to provide the optimum level of Sn doping corresponding to 10 wt. % widely reported in the literature.
关键词： atomic layer deposition,indium oxide,optoelectronics,transparent conducting oxides,thin films,indium tin oxide
更新于2025-09-23 15:23:52
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Optoelectronic properties of transparent conducting silver beta alumina and indium doped silver beta alumina thin films prepared by multi source vacuum evaporation method
摘要： The present study reports the optoelectronic properties of crystalline transparent conducting silver beta alumina (AgAl11O17) and indium doped silver beta alumina (AgAl11O17:In) thin films. In contrast to the p-type conductivity of the delafossite AgAlO2, both the hexagonal crystalline AgAl11O17 and AgAl11O17:In are n-type as confirmed by hot probe, hall effect and thermoelectric measurements. The variation in electrical conductivity (10-5-10-2 S/cm) and activation energy are correlated with carrier concentration and mobility. The films exhibit a wide direct band gap of ~3.93 ±0.02eV and transparency upto~62%.
关键词： Transparent conducting oxides,Thin films,Electrical conductivity,Optical properties
更新于2025-09-23 15:22:29
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[IEEE 2018 20th International Conference on Transparent Optical Networks (ICTON) - Bucharest (2018.7.1-2018.7.5)] 2018 20th International Conference on Transparent Optical Networks (ICTON) - Transparent Conducting Oxides for Optoelectronics and Biosensing Applications
摘要： Transparent conducting oxides have excellent electrical and optical properties that can be exploited to enhance the performance of devices for a large variety of applications such as integrated optoelectronics, biosensing, light detection or resistive memories. In addition, they have also shown the ability to be integrated in silicon CMOS devices and therefore the potential for mass production. In this work, we will focus on ITO and ZnO for different application fields of integrated optoelectronics, memristors and biosensing.
关键词： biosensing,memristors,transparent conducting oxides,indium tin oxide,zinc oxide,switching
更新于2025-09-23 15:22:29
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Al-doped zinc stannate films for photovoltaic applications
摘要： Al-doped zinc stannate (Zn2SnO4 : Al or Zn-Sn-O : Al or AZTO) has attracted considerable attention as a next-generation transparent conducting oxide (TCO) owing to its properties. In this study, AZTO films were deposited by co-sputtering Al-doped zinc oxide (AZO) and SnO2 targets at room temperature. The as-deposited AZTO films were confirmed to be satisfactorily adherent with good uniformity. These films had an average transmittance of over 80%, energy band gap of >3.5 eV, and relatively low electrical resistivity of 1.29×10?1 Ω cm. The composition ratio of Zn/Sn at 140 W of SnO2 power was approximately 2, indicating the formation of AZTO film with stoichiometric composition of Zn2SnO4 : Al at this power. Further, the Cu(InGa)Se2 (CIGS) device fabricated with AZTO (140 W) as a TCO exhibited an efficiency of 0.73%, with a VOC of 0.51 V, JSC of 3.76 mA/cm2, and FF of 38.4%. Furthermore, the conversion efficiency of CIGS cell was enhanced to 2.82% by employing the AZTO film deposited at the elevated temperature of 350 oC.
关键词： Al-doped Zinc Stannate,Thin Films,Cu(InGa)Se2,Transparent Conducting Oxides
更新于2025-09-23 15:19:57
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Perovskite Transparent Conducting Oxide for the Design of Transparent, Flexible and Self-Powered Perovskite Photodetector
摘要： Transparent and flexible electronic devices are highly desired to meet the great demand for next-generation devices with lightweight, flexible and portable. Transparent conducting oxides (TCOs), such as indium-tin oxide (ITO), serve as fundamental components for the design of transparent and flexible electronic devices. However, indium is rare and expensive. Herein, we report the fabrication of low-cost perovskite SrVO3 TCO films on transparent and flexible mica substrates, and further demonstrate its utilization as a TCO electrode for building a transparent, flexible and self-powered perovskite photodetector. Superior stable optical transparency and electrical conductivity retain in SrVO3 after bending up to 105 cycles. Without an external power source, the constructed all-perovskite photodetector exhibits a high responsivity (42.5 mA W-1), fast response time (3.09/1.23 ms), as well as an excellent flexibility and bending stability after dozens of cycles of bending at the extremely 90 bending angle. Our results demonstrate that low-cost and structural compatible transition metal-based perovskite oxides, like SrVO3, as TCO electrodes have huge potential for building high-performance transparent, flexible and portable smart electronics.
关键词： Transparent conducting oxides,flexible,SrVO3,perovskite,self-powered photodetector
更新于2025-09-23 15:19:57
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The effect of Ga doping on ZnO thin films subjected to CO2 laser annealing
摘要： The effect of Ga dopant on ZnO thin films was studied for transparent conducting oxide (TCO) applications. In and Ga were selected as dopants for the ZnO thin films, and their mole ratios were varied to identify the optimum proportions of the two dopants. After doping, optical post-annealing processes were applied to improve the conducting properties of the films. By applying optical post-annealing processes, rapid thermal annealing and CO2 laser annealing, the dopants were ionized and thus contributed to the conducting process. The crystal and electrical properties were studied and analyzed. By determining the films’ absorption and transmittance properties, their energy band gaps were calculated, and through X-ray photoelectron spectroscopy analysis, we found that the Ga dopant plays an important role in the TCO behavior. The Ga dopant in the ZnO thin films that had undergone laser annealing improved the electrical conductance properties due to their contributing the oxygen vacancy concentration, increasing the amount of free electrons in the ZnO structure.
关键词： In and Ga dopants,transparent conducting oxides,ZnO
更新于2025-09-16 10:30:52
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High transmittance Er-doped ZnO thin films as electrodes for organic light-emitting diodes
摘要： Rare earth element-Erbium (Er) doped ZnO (ErZO) thin films were deposited on glass substrates by pulsed laser deposition (PLD). The effect of the Er doping concentration on photoelectric properties of ErZO thin films was investigated in the range of 0–2.0 wt. %. The Er doping resulted in the improvement of n-type conductivity as compared with intrinsic ZnO thin films. The optimized ErZO thin films present the low resistivity of 3.4 (cid:2) 10(cid:3)4 X/cm, high carrier concentration of 5.9 (cid:2) 1020/cm3, and high visible optical transmittance ((cid:4)93%) when the Er content is 1.0 wt. %. The ErZO thin films were used as transparent anodes to fabricate organic light-emitting diodes (OLEDs). Impressively, with ErZO as the anode, the current efficiency of the OLED device can reach as high as 86.5 cd/A, which was increased by 14% when compared with the reference OLED device (76.0 cd/A) using indium tin oxide as the anode.
关键词： Er-doped ZnO,transparent conducting oxides,pulsed laser deposition,thin films,organic light-emitting diodes
更新于2025-09-12 10:27:22
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Time-modulated Conducting Oxide Metasurfaces for Adaptive Multiple Access Optical Communication
摘要： We demonstrate realization of a time-modulated metasurface in near-infrared frequency regime via integration of conducting oxide layers into plasmonic stripe nanoantennas arranged in a reflectarray configuration. The permittivity of conducting oxide layers is modulated in time through modulation of carrier concentration by applying radio-frequency biasing signals which leads to generation of higher-order frequency harmonics. We rigorously characterize the electro-optical frequency conversion performance of the metasurface. We then exploit the dispersionless angle-independent phase discontinuities on the wavefront of higher-order frequency harmonics to achieve dynamic multi-wavelength multi-beam scanning across S, C, and L telecommunication bands via pixelated control over the modulation phase delay. It is established that such time-modulated metasurfaces can be utilized as reflectarray antennas for active multicasting as well as wavelength and angle multiplexing, thus improving optical communication capacity by providing multiple access and integrating several communication channels into a single antenna platform. The role of modulation waveform in the spectral diversity of harmonics is also explored. Specifically, modulation waveform is optimized to realize unicast and broadcast links. Finally, active beam-scanning performance of the time-modulated conducting oxide metasurface is compared with that of its quasi-static counterpart verifying the enhanced bandwidth as well as suppressed side lobes in the time-modulated platform.
关键词： Metasurfaces,Time-Modulation,MIMO,Multiplexing,Multicasting,Transparent Conducting Oxides
更新于2025-09-11 14:15:04
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Enhanced Electrochemical Stability of TiO <sub/>2</sub> -Protected, Al-doped ZnO Transparent Conducting Oxide Synthesized by Atomic Layer Deposition
摘要： Transparent, conductive coatings on porous, three-dimensional materials are often used as the current collector for photoelectrode designs in photoelectrochemical applications. These structures allow for improved light trapping and absorption in chemically-synthesized, photoactive overlayers while minimizing parasitic absorption in the current collecting layer. Atomic layer deposition (ALD) is particularly useful for fabricating transparent conducting oxides (TCOs) like Sn-doped In2O3 (ITO) and Al-doped ZnO (AZO) for structured materials because the deposition is specific to exposed surfaces. Unlike line-of-site deposition methods (evaporation, spray pyrolysis, sputtering), ALD can access the entire complex interface to make a conformal transparent conductive layer. While ITO and AZO can be grown by ALD, they are intrinsically soluble in the acidic and basic environments common for electrochemical applications like water splitting. To take advantage of the unique characteristics of ALD in these applications, is important to develop strategies for fabricating TCO layers with enhanced chemical stability. Ultra-thin coatings of stable materials can be used to protect otherwise unstable electrochemical interfaces while maintaining the desired function. Here, we describe experiments to characterize the chemical and electrochemical stability of ALD-deposited AZO TCO thin films protected by a 10nm TiO2 overlayer. The addition of a TiO2 protection layer is demonstrated to improve the chemical stability of AZO by orders of magnitude compared to unprotected, yet otherwise identically prepared AZO films. The electrochemical stability is enhanced accordingly in both acidic and basic environments. We demonstrate that TiO2-protected AZO can be used as a TCO for both the cathodic hydrogen evolution (HER) and anodic water oxidation (OER) half-reactions of electrochemical water splitting in base and for HER in acid when the appropriate electrocatalysts are added. As a result, we show that ALD can be used to synthesize a chemically stable TCO heterostructure, expanding the range of materials and electrochemical environments available for building complex photoelectrode architectures.
关键词： Water splitting,Transparent conducting oxides,Atomic layer deposition,Electrochemical stability,Al-doped ZnO,TiO2 protection layer
更新于2025-09-10 09:29:36