- 标题
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Study on 4H-SiC GGNMOS based ESD Protection Circuit with Low Trigger Voltage Using Gate-Body Floating Technique for 70 V Applications
摘要： In this letter, we propose a 4H-SiC based electrostatic discharge (ESD) protection circuit with a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved floating technology to the 4H-SiC grounded-gate n-type metal–oxide–semiconductor (GGNMOS) for 70V applications. Electrical characteristics of the 4H-SiC-based conventional GGNMOS, floating-body NMOS (FBNMOS), and the proposed ESD protection circuit were compared and analyzed using the transmission-line pulse test. To verify the high-temperature characteristics of the proposed 4H-SiC-based ESD protection circuit, its thermal reliability was measured at high temperatures (300–500 K).
关键词： FBNMOS,electrostatic discharge protection,trigger voltage,GFNMOS,GGNMOS,4H-SiC
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - Singapore (2018.7.16-2018.7.19)] 2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) - A Simple Method of Adjusting Trigger Voltage of HBT Device for ESD Protection
摘要： The trigger voltage of the HBT device is important for ESD protection. A method of adjusting the trigger voltage of SiGe Heterojunction Bipolar Transistor (HBT) device is proposed in this paper. The simulation and experiment results show that the trigger voltage of HBT can be simply adjusted by varying the emitter junction area.
关键词： Trigger voltage,Electrostatic discharge (ESD),Heterojunction bipolar transistor (HBT)
更新于2025-09-19 17:15:36