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Liquid Phase Exfoliated Indium Selenide Based Highly Sensitive Photodetectors
摘要： Layered semiconductors of the IIIA–VIA group have attracted considerable attention in (opto)electronic applications thanks to their atomically thin structures and their thickness-dependent optical and electronic properties, which promise ultrafast response and high sensitivity. In particular, 2D indium selenide (InSe) has emerged as a promising candidate for the realization of thin-film field effect transistors and phototransistors due to its high intrinsic mobility (>102 cm2 V?1 s?1) and the direct optical transitions in an energy range suitable for visible and near-infrared light detection. A key requirement for the exploitation of large-scale (opto)electronic applications relies on the development of low-cost and industrially relevant 2D material production processes, such as liquid phase exfoliation, combined with the availability of high-throughput device fabrication methods. Here, a β polymorph of indium selenide (β-InSe) is exfoliated in isopropanol and spray-coated InSe-based photodetectors are demonstrated, exhibiting high responsivity to visible light (maximum value of 274 A W?1 under blue excitation 455 nm) and fast response time (15 ms). The devices show a gate-dependent conduction with an n-channel transistor behavior. Overall, this study establishes that liquid phase exfoliated β-InSe is a valid candidate for printed high-performance photodetectors, which is critical for the development of industrial-scale 2D material-based optoelectronic devices.
关键词： photodetectors,2D semiconductors,indium selenide,field effect transistors,liquid phase exfoliation,spray coating,solution processed
更新于2025-09-23 15:19:57
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Alla??Polymer Higha??Performance Photodetector through Lamination
摘要： All-polymer and semitransparent organic photodetectors (OPDs) fabricated through lamination on flexible substrates are demonstrated. Through lamination both bilayer and bulk heterojunction (BHJ) configurations for two different all-polymer blends are easily made, and characterized in terms of detectivity, linear dynamic range (LDR), and bandwidth. These devices show high detectivity up to 1011 Jones. The importance of measured noise rather than estimated shot noise in detectivity calculation is discussed and emphasized. With this high detectivity and with the geometric flexibility due to the polymer materials, these detectors can be attached to curved surfaces for optical detection. Their use at fingertips for heart rate sensing is demonstrated. These devices also have a very wide bandwidth of more than 300 kHz and an LDR of 75 dB. As such the, roll-to-roll compatible lamination method shows great potential for high-performance OPDs fabrication.
关键词： heart rate sensors,lamination,all-polymer photodetectors
更新于2025-09-23 15:19:57
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Thickness-modulated in-plane Bi<sub>2</sub>O<sub>2</sub>Se homojunctions for ultrafast high-performance photodetectors
摘要： Bi2O2Se thin film could be one of the promising material candidates for next-generation electronic and optoelectronic applications with the outstanding electrical and optoelectrical properties. However, the device performance based on the Bi2O2Se thin films was not fully explored in the photodetecting area. Considering that the electrical properties such as carrier mobility, work function and energy band structure of Bi2O2Se are thickness dependent, in-plane Bi2O2Se homojunctions consisting of layers with different thickness were successfully synthesized by CVD method across the terraces on the mica substrates, where terraces were created during the mica surface layer peeling off process. In this way, effective internal electrical fields were built up along the Bi2O2Se homojunctions, The Bi2O2Se in-plane homojunctions exhibiting diode-like rectification behavior with an on/off ratio of 102, what’s more, the photodetectors based on which were featured as highly sensitive and ultrafast with the maximum photoresponsivity of 2.5A/W and the lifetime of 4.8μs. Compared with the Bi2O2Se uniform thin films, the photo-electric conversion efficiency was greatly improved for the in-plane homojunctions.
关键词： thickness modulation,in-plane homojunction,photodetectors,Bi2O2Se
更新于2025-09-23 15:19:57
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High performance CsPbBr <sub/>3</sub> quantum dots photodetectors by using zinc oxide nanorods arrays as an electron-transport layer
摘要： The electron transport layer (ETL) in perovskite photodetectors is playing a vital role in highly efficient electron extraction. Herein, this work reports a perovskite photodetector based on hydrothermal-fabricated ZnO nanorods (NRs) as the ETL and hot-injection-fabricated CsPbBr3 quantum dot (QD) as the photoabsorber. The crystalline structure, morphologies, and photoluminescence (PL) of the materials and the physics mechanism of highly efficient electron extraction in the devices are characterized and analyzed. The PL and time-resolved PL confirm the reduced recombination and enhanced electron transport to the indium tin oxide anode. The photodetectors based on ZnO NRs/CsPbBr3 QDs exhibit enormous enhancement in the response parameters such as a rise time of 12 ms, a decay time of 38 ms, and an on/off ratio of 3000, compared with the photodetectors based on ZnO films/CsPbBr3 QDs. These results indicate that the fabricated ZnO NRs/CsPbBr3 QDs heterojunction has a wide prospect of future applications in photodetectors.
关键词： electron transport layer,photoluminescence,ZnO nanorods,perovskite photodetectors,CsPbBr3 quantum dots
更新于2025-09-23 15:19:57
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Broadband high responsivity large-area plasmonic-enhanced multilayer MoS <sub/>2</sub> on p-type silicon photodetector using Au nanostructures
摘要： High responsivity, large-area plasmonic-enhanced nanostructure photodetector based on multilayer (ML) molybdenum disulfide (MoS2) deposited on p-type Silicon (Si) substrates is reported. A large area ML-MoS2 is deposited onto the Si photodetector (PD) using a modified membrane filtration method. This large area ML-MoS2 and Au NSs on the p-Si form a cavity-like structure that dramatically enhances the incident light path. The increase of incident light path due to light trapping effect enhances the electron-hole pair generation tremendously. The plasmonic-enhanced ML MoS2 on Si PD has achieved a stable and repeatable photoresponse up to 37 A W?1, whereas the detectivity is around 1012 Jones at the broad wavelengths (405–780 nm) with a modulation frequency of 1 kHz. The enhancement of photoresponsivity is 8, 5.3 and 11 times with 5 V bias at an incident wavelength of 405 nm, 650 nm and 780 nm respectively as compared to the bare p-Si PD. The experimental results also show that the plasmonic-enhanced ML-MoS2 on Si PD exhibited fast photoresponse (rise time of ～1 μs and fall time of ～18 μs), which is much higher compared to typical transition metal dichalcogenide PD or single layer MoS2 based PD. These excellent performances show that the plasmonic-enhanced MoS2 structure is highly potential to apply in Si photovoltaics, visible range photodetection, and visible bio/chemical sensing application.
关键词： light trapping,photodetectors,optical surface waves,nanostructured materials
更新于2025-09-23 15:19:57
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Nonvolatile Programmable WSe <sub/>2</sub> Photodetector
摘要： Optoelectronic devices with nonvolatile memory are an important component in a wide variety of applications ranging from optoelectronic random-access-memories, with the advantage of using optical stimuli as an added parameter, to complex artificial neuromorphic networks that pretend to mimic the working schemes of the human brain. In the past few years, 2D materials have been proposed as attractive candidates to build such optoelectronic devices with memory due to their excellent optoelectronic properties and high sensitivity to external electric fields. Here, a WSe2 monolayer p–n junction working as a nonvolatile programmable photodetector is reported, that, enabled by a split-gate configuration with embedded charge-trapping layers, is capable of retaining custom responsivity values over time, prior configuration by the user. Once configured, this photodetector can operate without external applied bias voltage as a self-driven photodetector, as well as without external back-gate voltage thanks to the charge stored in the floating gates. Furthermore, the device shows a remarkable performance, with open-circuit voltage around 1 V at approximately 270 W m?2 white light, fill factor higher than 30%, and fast response times. This programmable photodetector sets a new concept as a building block in more complex image-sensing systems.
关键词： programmable photodetector,tungsten-diselenide,2D materials,photodetectors,floating gates,nonvolatile memories
更新于2025-09-23 15:19:57
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Vapora??Deposited Cs <sub/>2</sub> AgBiCl <sub/>6</sub> Double Perovskite Films toward Highly Selective and Stable Ultraviolet Photodetector
摘要： Double perovskites have shown great potentials in addressing the toxicity and instability issues of lead halide perovskites toward practical applications. However, fabrication of high-quality double perovskite thin films has remained challenging. Here, sequential vapor deposition is used to fabricate high-quality Cs2AgBiCl6 perovskite films with balanced stoichiometry, superior morphology, and highly oriented crystallinity, with an indirect bandgap of 2.41 eV. Using a diode structure, self-powered Cs2AgBiCl6 ultraviolet (UV) photodetectors are demonstrated with high selectivity centered at 370 nm, with low dark current density (≈10?7 mA cm?2), high photoresponsivity (≈10 mA W?1), and detectivity (≈1012 Jones). Its detectivity is among the highest in all double-perovskite-based photodetectors reported to date and surpassing the performance of other perovskite photodetectors as well as metal oxide in the UV range. The devices also show excellent environmental and irradiation stability comparable to state-of-the-art UV detectors. The findings help pave the way toward application of double perovskites in optoelectronic devices.
关键词： double perovskite films,sequential vapor deposition,selective detection,ultraviolet photodetectors
更新于2025-09-23 15:19:57
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Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
摘要： Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristic times for large non-equilibrium carrier densities at high energy. An additional channel has been recently demonstrated in graphene/hBN heterostructures by emission of hBN hyperbolic phonon polaritons (HPhP) with picosecond decay time. Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. We further demonstrate the switching of carrier lifetime from ~30 ps (attributed to interband Auger) down to a few picoseconds upon ignition of HPhP relaxation at finite bias and/or with infrared excitation power. Our study opens interesting perspectives to exploit graphene/hBN heterostructures for THz lasing and highly sensitive THz photodetection as well as for phonon polariton optics.
关键词： photodetectors,mid-infrared,phonon polaritons,van der Waals heterostructures,THz,Graphene,carrier lifetime,hBN
更新于2025-09-23 15:19:57
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IMPROVING THE QUALITY OF PHOTODETECTORS USING ISOTOPIC NANOENGINEERING METHODS
摘要： The study considers the possibility of changing the isotopic composition of a substance to improve the physical properties of the material and the optoelectronic characteristics of a photodetector as the most common device in optoelectronics. It is shown that the reduction of heavy isotopes in the semiconductor material of photodetectors increases the mobility of charge carriers, the light absorption coefficient, and quantum efficiency, while reducing the number of band gap sublevels that affect the dark current. This increases the photodetector sensitivity, decreases the magnitude of the dark current, and improves the signal power to noise power ratio at the output of the photodetector. Technologies for improving the properties of a material by improving the characteristics of bulk semiconductor crystals, multiple quantum wells, and superlattices are compared.
关键词： optoelectronics,photodetectors,quantum efficiency,isotopic nanoengineering,semiconductor materials
更新于2025-09-23 15:19:57
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A comparison of mechanisms for improving dark current characteristics in barrier infrared photodetectors
摘要： The dark current characteristics in InAs/GaSb type-II superlattice (SL) barrier infrared photodetectors are theoretically investigated using the drift-diffusion-based device simulator. It is shown that both structures can effectively reduce the dark current compared to the p-i-n photodiode without barrier, and the dependence on the barrier doping density are discussed in detail. There exists an optimum doping density to minimize the dark current in active region (n type), for which two different engineered structures, i.e., called pBn and nBn, are evaluated.
关键词： dark current,pBn,InAs/GaSb type-II superlattice,barrier infrared photodetectors,nBn
更新于2025-09-23 15:19:57