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Controllable orientations for Sb <sub/>2</sub> S <sub/>3</sub> solar cells by vertical VTD method
摘要： Antimony sulfide (Sb2S3) is a promising photoelectric material because of its wide bandgap approximately 1.7 eV for next-generation solar cells, high optical absorption coefficient, and its green and earth-abundant constituents. Different to traditional cubic structure photovoltaic materials, Sb2S3 holds one-dimensional crystal structure and its thin film with [hk1] preferred orientation shows one-order-higher carrier transport mobility. However, all the reported Sb2S3 films exhibited [hk0] preferred orientation on CdS-based superstrate device structure up to now. Thus, it is indispensable to study the controllable-orientations Sb2S3 film deposition and the relationship between the orientation and performances. In this paper, we develop a vertical vapor transport deposition (V-VTD) method, which can tune the preferred orientation of Sb2S3 thin film from [hk0] to [hk1] by reaction recipe monitoring. Combining the experiment results, a reasonable deposition/reevaporation competing model is suggested to explain above orientation conversion mechanism. The device efficiency increases from less than 2% to about 4% with the orientation of Sb2S3 film changing from [hk0] to [hk1]. By fine regulating the technique of deposition, the device with [hk1] orientation has better crystallinity, lower interface recombination, and higher built-in voltage comparing with the [hk0] one. Finally, a champion power conversion efficiency (PCE) of 4.5% has been achieved, and the VOC of 730 mV is the top value among the Sb2S3 solar cells. The present versatile orientation tuning strategy could overcome the bottleneck of strong anisotropic materials and show high potential for noncubic material deposition and related optoelectronic device performance enhancement.
关键词： vertical vapor transport deposition,solar cell,controllable orientations,Sb2S3,orientation conversion mechanism
更新于2025-09-23 15:21:01
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Epitaxial CdTe Thin Films on Mica by Vapor Transport Deposition for Flexible Solar Cells
摘要： Most high-quality CdTe thin films are epitaxially grown on single-crystalline substrates through chemical bondings by either molecular beam epitaxy or metalorganic chemical vapor deposition. The epitaxial CdTe films are rarely applied in electronic or optoelectronic devices because of the rigid single-crystalline substrate. We present high-quality CdTe films epitaxially grown on mica by vapor transport deposition process through weak interface interactions. The full-width-at-half-maximum (FWHM) of X-ray diffraction rocking curve of CdTe(111) and the FWHM of azimuthal in-plane angular dispersion of CdTe(111) were 0.23° and 0.36°, respectively. The weak interaction at the interface enables a transfer of the epitaxial film from mica onto other flexible substrates for applications. The epitaxial CdTe film was separated from the mica substrate by the surface tension of water during immersion, and then transferred onto a flexible SU-8 photoresist substrate for the fabrication of CdTe solar cells. We successfully fabricated the flexible all-epitaxial, epi-CdS/epi-CdTe solar cells with a power conversion efficiency of 9.59%, which showed low interface defects and high diode quality compared to the poly-CdS/epi-CdTe solar cells.
关键词： epitaxy,van der Waals,vapor transport deposition,CdTe,flexible photovoltaics
更新于2025-09-23 15:19:57
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Quasi-Vertically-Orientated Antimony Sulfide Inorganic Thin-Film Solar Cells Achieved by Vapor Transport Deposition
摘要： The one-dimensional photovoltaic absorber material Sb2S3 requires crystal orientation engineering to enable efficient carrier transport. In this work, we adopted a vapor transport deposition (VTD) method to fabricate vertically aligned Sb2S3 on a CdS buffer layer. Our work shows that such a preferential vertical orientation arises from the sulfur deficit of the CdS surface which creates a beneficial bonding environment between exposed Cd2+ dangling bonds and S atoms in the Sb2S3 molecules. The CdS/VTD-Sb2S3 interface recombination is suppressed by such properly aligned ribbons at the interface. Compared with typical [120]-oriented Sb2S3 films deposited on CdS by rapid thermal evaporation (RTE) method, the VTD-Sb2S3 thin film is highly [211]- and [121]- oriented and the performance of the solar cell is increased considerably. Without using any hole transportation layer, a conversion efficiency of 4.73% is achieved with device structure of ITO/CdS/Sb2S3/Au. This work provides a potential way to acquire vertical aligned thin films on different buffer layers.
关键词： inorganic device,Sb2S3 solar cell,Vapor transport deposition,thin film,vertical growth
更新于2025-09-23 15:19:57