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Quasi-Vertically-Orientated Antimony Sulfide Inorganic Thin-Film Solar Cells Achieved by Vapor Transport Deposition
摘要： The one-dimensional photovoltaic absorber material Sb2S3 requires crystal orientation engineering to enable efficient carrier transport. In this work, we adopted a vapor transport deposition (VTD) method to fabricate vertically aligned Sb2S3 on a CdS buffer layer. Our work shows that such a preferential vertical orientation arises from the sulfur deficit of the CdS surface which creates a beneficial bonding environment between exposed Cd2+ dangling bonds and S atoms in the Sb2S3 molecules. The CdS/VTD-Sb2S3 interface recombination is suppressed by such properly aligned ribbons at the interface. Compared with typical [120]-oriented Sb2S3 films deposited on CdS by rapid thermal evaporation (RTE) method, the VTD-Sb2S3 thin film is highly [211]- and [121]- oriented and the performance of the solar cell is increased considerably. Without using any hole transportation layer, a conversion efficiency of 4.73% is achieved with device structure of ITO/CdS/Sb2S3/Au. This work provides a potential way to acquire vertical aligned thin films on different buffer layers.
关键词： inorganic device,Sb2S3 solar cell,Vapor transport deposition,thin film,vertical growth
更新于2025-09-23 15:19:57
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In situ TEM observation of controlled growth of two-dimensional WS2 with vertically aligned layers and high-temperature stability
摘要： Layered transition metal dichalcogenides with vertically aligned morphology show great potentials in energy conversion and storage due to the high density of exposed edge sites which have enhanced electrochemical reactivity. In this letter, through in situ heating investigations in a transmission electron microscope, the controlled growth of vertically aligned WS2 with high-temperature stability has been achieved through the thermolysis of solid precursor K2WS4. It is found that the growth of vertically aligned WS2 layers employs hybrid growth modes, in which the growth of new WS2 slab is initiated at old ones from either the middle part or edge part. These vertically aligned WS2 layers show great stability at high temperature of 900°C. Our detailed investigations and theoretical calculations indicate that potassium element in the solid precursor plays a critical role in the growth and evolution of vertically aligned WS2. This method is also applicable to the controlled growth of vertically aligned MoS2 with high-temperature stability through the decomposition of K2MoS4. These findings pave a way for tailored design and fabrication of materials with optimized structure to achieve their superior properties.
关键词： Vertical growth,In situ,High-temperature stability,Transition metal dichalcogenides,TEM
更新于2025-09-16 10:30:52