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- 实验方案
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Direct oscillation at 640-nm in single longitudinal mode with a diode-pumped Pr:YLF solid-state laser
摘要： A diode-pumped solid-state laser directly emitting continuous-wave (cw), single-longitudinal mode (SLM) output at 640-nm with a c-cut praseodymium-doped yttrium lithium fluoride (Pr:YLF) crystal was demonstrated for the first time, to the best of our knowledge. Combining two quarter-wave plates (QWPs) and one Brewster plate to form a twisted-mode cavity, this SLM solid-state laser achieved a maximum cw output power of 403 mW with a threshold of 600 mW and a slope efficiency of 26.8%. The emission spectrum had a linewidth of 150 MHz. The single-mode beam quality (M2) was 1.10 and 1.07 along the x and y direction, respectively.
关键词： Single-longitudinal-mode,Diode-pumped solid-state lasers,Visible lasers
更新于2025-11-28 14:23:57
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Visible Laser on Silicon Optofluidic Microcavity
摘要： Optical readout within microfluidic chips is a bottleneck limiting their industrial development. The integration of lasers operating in the visible range within a microfluidic platform is crucial for enabling in situ optical measurements in lab-on-a-chip applications. In principle, microstructured single-crystal silicon is an excellent optofluidic platform, which allows integration of microfluidic channels together with optical circuits including micro-optics, waveguides, and resonant cavities. However, the silicon absorption below 1.1 μm is a fundamental limit that prohibits the use of silicon-based micro-cavities as the feedback element for visible lasers and restricts their use to the infrared only. In this work, an ultra-wide band silicon cavity enabled by two deeply etched hollow-core planar waveguides is demonstrated. The proposed microcavity shows a broad bandwidth extending from 500 to 1600 nm with quality factors up to 2067. A tubular microfluidic channel is inserted between the mirrors of the optofluidic cavity. The microfluidic channel is filled with Rhodamine 6G (R6G) at 20 μL min?1 flow rate allowing successful demonstration of lasing on silicon at 562.4 nm. The laser beam propagates in-plane (along the chip surface) and is handled with monolithically integrated input/output optical fiber grooves. This provides a unique silicon platform integrating hollow core optofluidic channels together with optical cavities, which is suitable for implementing optical readout in lab-on-a-chip devices.
关键词： visible lasers,microcavities,silicon,optofluidics,lab on a chip
更新于2025-09-23 15:21:01
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Tunable Dual-Wavelength Self-injection Locked InGaN/GaN Green Laser Diode
摘要： We implemented a tunable dual-longitudinal-mode spacing InGaN/GaN green (521–528 nm) laser diode by employing a self-injection locking scheme that is based on an external cavity configuration and utilizing either a high or partial-reflecting mirror. A tunable longitudinal-mode spacing of 0.20 – 5.96 nm was accomplished, corresponding to a calculated frequency difference of 0.22–6.51 THz, as a result. The influence of operating current and temperature on the system performance was also investigated with a measured maximum side-mode-suppression ratio of 30.4 dB and minimum dual-mode peak optical power ratio of 0.03 dB. To shed light on the operation of the dual-wavelength device arising from the tunable longitudinal-mode spacing mechanism, the underlying physics is qualitatively described. To the best of our knowledge, this tunable longitudinal-mode-spacing dual-wavelength device is novel, and has potential applications as an alternative means in millimeter wave and THz generation, thus possibly addressing the terahertz technology gap. The dual-wavelength operation is also attractive for high-resolution imaging and broadband wireless communication.
关键词： InGaN/GaN visible lasers,Dual wavelength lasers,optical injection locking,semiconductor lasers
更新于2025-09-11 14:15:04
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[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Comparative Study of Spectroscopic Properties of Pr <sup>3+</sup> -Doped LiY <sub/>0.3</sub> Lu <sub/>0.7</sub> F <sub/>4</sub> , LiYF <sub/>4</sub> and LiLuF <sub/>4</sub> Crystals
摘要： The most common host materials for visible lasers are the most common host materials for visible lasers due to their large energy bandgap and low phonon energies. Among the rare-earth ions, Pr3+ is very attractive for visible lasers due to its transitions in the blue, green, and red spectral regions. In this contribution, we report on the spectroscopic properties of Pr3+-doped LiY0.3Lu0.7F4, LiYF4 and LiLuF4 crystals. The investigated crystals were grown by the Bridgman-Stockbarger method. The content of the Pr3+ ions in the crystals was determined around 0.5 at.%, 1 at.%, 1.5 at.%, 2 at.% and 5 at.% by ICP-MS. Doped LiYF4 and LiLuF4 crystals possess higher segregation coefficients in contrast to LiY0.3Lu0.7F4, respectively. For more over, in the case of Pr3+ and Nd3+ ions, the mixed LiY0.3Lu0.7F4 crystal has higher segregation coefficient comparing to both LiYF4 and LiLuF4 crystals (1.5, 1.2). The optical absorption spectra were measured using an UV-VIS-NIR spectrophotometer. The Judd-Ofelt theory was applied to determine the intensity parameters Ωλ (λ = 2, 4, 6). It was determined that the intensity parameters of Pr3+ are 1.17.
关键词： Pr3+-doped,LiLuF4,visible lasers,LiY0.3Lu0.7F4,spectroscopic properties,LiYF4
更新于2025-09-11 14:15:04