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An Improved Proposed Single Phase Transformerless Inverter with Leakage Current Elimination and Reactive Power Capability for PV Systems Application
摘要： Single-phase transformerless inverters are broadly studied in literature for residential-scale PV applications due to their great advantages in reducing system weight, cost and elevating system efficiency. The design of transformerless inverters is based on the galvanic isolation method to eliminate the generation of leakage current. Unfortunately, the use of the galvanic isolation method alone cannot achieve constant common mode voltage (CMV). Therefore, a complete elimination of leakage current cannot be achieved. In addition, modulation techniques of single-phase transformerless inverters are designed for the application of the unity power factor. Indeed, next-generation PV systems are required to support reactive power to enable connectivity to the utility grid. In this paper, a proposed single-phase transformerless inverter is modified with the clamping method to achieve constant CMV during all inverter operating modes. Furthermore, the modulation technique is modified by creating a new current path in the negative power region. As a result, a bidirectional current path is created in the negative power region to achieve reactive power generation. The simulation results show that the CMV is completely clamped at half the DC link voltage and the leakage current is almost completely eliminated. Furthermore, a reactive power generation is achieved with the modified modulation techniques. Additionally, the total harmonic distortion (THD) of the grid current with the conventional and a modified modulation technique is analyzed. The efficiency of the system is enhanced by using wide-bandgap (WBG) switching devices such as SiC MOSFET. It is observed that the efficiency of the system decreased with reactive power generation due to the bidirectional current path, which leads to increasing conduction losses.
关键词： leakage current,transformerless inverter,reactive power,wide-bandgap (WBG),silicon carbide (SiC),photovoltaic (PV) power system
更新于2025-09-23 15:23:52
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A New Hands-on Course in Characterization of Wide Bandgap Devices
摘要： As wide bandgap (WBG) devices and applications move from niche to mainstream, a new generation of engineers trained in this area is critical to continue the development of the field. This paper introduces a new hands-on course in characterization of WBG devices, which is an emerging and fundamental topic in WBG-based techniques. First, the lecture-simulation-experiment format based course structure and design considerations, such as safety, are presented. Then the necessary facilities to support this hands-on course are summarized, including classroom preparation, software tools, and laboratory equipment. Afterward, the detailed course implementation flow is presented to illustrate the approach of close interaction among lecture, simulation, and experiment to maximize students’ learning outcomes. Finally, grading for students and course evaluation by students are discussed with the findings and potential improvements highlighted. Detailed course materials are provided via potenntial.eecs.utk.edu/WBGLab for educational use.
关键词： electrical engineering education,power electronics,hands-on training,WBG devices
更新于2025-09-23 15:23:52
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Regional Manufacturing Cost Structures and Supply Chain Considerations for SiC Power Electronics in Medium Voltage Motor Drives
摘要： With the growth in wide bandgap (WBG) semiconductors, specifically Silicon Carbide (SiC), the technology has matured enough to highlight a need to understand the drivers of manufacturing cost, regional manufacturing costs, and plant location decisions. Further, ongoing research and investment, necessitates analytical analysis to help inform development of wide bandgap technologies. The paper explores the anticipated device, module, and motor drive cost at volume manufacturing. It additionally outlines the current regional contributors to the supply chain and proposes how the base models can be used to evaluate the cost reduction potential of proposed research advances.
关键词： Wide bandgap,Supply chain,SiC,Wide-band gap,Wideband gap,Techno-economic,WBG,bottoms-up,Medium voltage,Motor drive,Wide band-gap,Analysis,Power electronics,Cost model
更新于2025-09-23 15:22:29
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A compact model and TCAD simulation for GaN-gate injection transistor (GIT)
摘要： Wide bandgap (WBG) semiconductor devices represent an attractive developing technology for power applications that is recently gaining commercial ground. GaN has advantages as one of the top contenders with high bandgap, high mobility, high saturation velocity, and high breakdown voltage. GaN enhancement-mode devices are favored over depletion-mode devices for power electronics applications and are only recently becoming commercially available. The enhancement-mode device investigated in this work is a GaN-gate injection transistor (GIT) in which the normally-off operation is achieved with an additional p-doped gate. This paper presents current-voltage (I-V) characteristics of GaN-GIT device using a physics based compact model as well as TCAD (Technology Computer-Aided Design) numerical simulation to predict and model the device behavior of the GIT. This paper presents a comparison of the TCAD simulation results with a compact model intended for low frequency applications in power electronics in the KHz to MHz range.
关键词： GIT,GaN,WBG,TCAD,HEMT
更新于2025-09-23 15:21:01
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Photovoltaic-Driven SiC MOSFET Circuit Breaker with Latching and Current Limiting Capability
摘要： This paper introduces a Solid State Circuit Breaker with Latching and Current Limiting capabilities for DC distribution systems. The proposed circuit uses very few electronic parts and it is fully analog. A SiC N-MOSFET driven by a photovoltaic driver and a maximum current detector circuit are the core elements of the system. This work details circuit operation under different conditions and includes experimental validation at 1 kVdc. Wide versatility, highly configurable, and very fast response, less than 1 μs in the case of short-circuit, are the most remarkable outcomes.
关键词： SiC MOSFET,Solid State Circuit Breaker (SSCB),fault current limiter,WBG semiconductors,DC power distribution
更新于2025-09-23 15:21:01
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[IEEE 2018 International Power Electronics Conference (IPEC-Niigata 2018 –ECCE Asia) - Niigata, Japan (2018.5.20-2018.5.24)] 2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia) - A Study on Load Fluctuation of Isolated DC-DC Converter with Class Phi-2 Inverter using GaN-HFET
摘要： In recent years, the development and application of GaN-HFET(Heterojunction Field Effect Transistor) has become actively. As GaN-HFETs have advantages in high frequency operation, it is possible to down size power converters by rising switching frequency. In this paper, we investigate the load fluctuation of an isolated DC-DC converter with the class Phi-2 inverter circuit using GaN-HEFT, which is operated at 13.56 MHz.
关键词： DC-DC Converter,Resonant Converter,GaN-HFET,WBG Semiconductor
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Surge current capability of SiC MOSFETs in AC distribution systems
摘要： Whereas short circuit current and time ratings for power converter applications are often stated by SiC device manufacturers, surge current capability for AC electrical apparatus applications are rarely available. This paper present the experimental validation of surge current capability of selected SiC devices for low voltage AC distribution system applications. Because AC electrical apparatus, such as relays, contactors, and circuit breakers, have a different set of system parameters and requirements compared to traditional power converter applications, power semiconductor devices need to be validated from a different point of view. In fact, robustness to inductive short circuit currents, inrush currents, short and long time overload are some of the basic requirements for the utilization of WBG devices for these applications. In this paper, we compare the performance of different SiC MOSFETs under different types of AC waveform conditions.
关键词： semiconductor device characterization,temperature measurement,solid state circuit breaker,WBG semiconductor devices,overload capability,surge current,SiC MOSFET,electrical apparatus
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Loss Characterization and Analysis of High Voltage E-mode GaN HEMT in Soft-switching Application
摘要： Application of wide band gap (WBG) devices are getting a sharp rise in the recent power electronics sector, due to their superior performance when compared to silicon. Even though GaN devices provide a promising ef?ciency and power density numbers, but high frequency operation limits these bene?ts. This leaves behind a space for the realization of high frequency based soft switching topologies, which in combination with the GaN makes the converter size smaller and simultaneously ef?cient. In this unique combination, an accurate design and analysis to estimate the overall losses of the converter is necessary. Typical converter design process starts with the detailed loss estimation analysis, wherein the semiconductor based losses shares the major portion. Traditional analytical way of estimating the soft-switching semiconductor loss is not precise as it mainly depends on the instantaneous circuit conditions. In case of the soft-switching topology, the instantaneous switch voltage and current needs to be monitored to determine the switching loss accurately. This will result in a more realistic semiconductor loss evaluation, which will further ease in improving converter design and analysis. Hence, in this paper the soft-switching condition loss characterization and analysis involving an enhanced-mode (E-mode) GaN implemented in a conventional topology is investigated and veri?ed.
关键词： E-mode,WBG,Hard-switching,HEMT,DPT,Soft-switching,GaN
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
摘要： Wide-bandgap (WBG) switches can achieve switching times on the order of several nanoseconds. However, faster switches generate larger inverter output dv/dt. Various deleterious effects attributed to large inverter dv/dt have been observed in various applications, especially in motor drive systems. The effects include false turn-on of WBG switches due to cross-talk, transient over-voltages at motor terminals, electromagnetic interference, and motor bearing failures due to micro arcs. A common approach for limiting peak inverter dv/dt involves the insertion of a dv/dt filter. However, the dv/dt filter introduces extra power losses and increases the size/weight of the heat sink. Soft-switching circuits can reduce inverter dv/dt and switching losses, but using soft-switching to accurately control dv/dt has not been fully explored. A new soft-switching circuit, entitled the auxiliary resonant soft-edge pole (ARSEP), is set forth. The ARSEP improves the available soft-switching circuits so that the dv/dt can be accurately controlled through circuit parameter design. An ARSEP inverter prototype based on SiC MOSFETs was designed, simulated, built, and tested to verify its performance and benefits. Compared to a conventional hard-switched inverter with a dv/dt filter, the ARSEP inverter results in a significant reduction in overall power loss, inductor volume, and weight.
关键词： SiC MOSFETs,soft-switching circuits,auxiliary resonant soft-edge pole (ARSEP),inverter output dv/dt,Wide-bandgap (WBG) switches
更新于2025-09-04 15:30:14