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Pressureless sintering of ZnO thin film on plastic substrate via vapor annealing process at near-room temperature
摘要： In this work, Vapor Annealing Sintering (VAS) process was introduced for low-cost pressureless producing dense Zinc Oxide (ZnO) thin films deposited from nanoparticles at near-room temperature (50 °C). Spontaneous densification evolution from nanoparticulate to a dense film via a dissolution-diffusion-reprecipitation mechanism was observed exposing ZnO layers to the vapor of an acetic acid aqueous solution at isothermal condition. The influence of the annealing on the optical properties of the treated films was investigated in order to study the structural changes. The proposed method can allow new opportunities for simple and low-cost ceramics thin film manufacturing also involving pressure and temperature-sensitive materials.
关键词： Zinc oxide,Thin film,Nanoparticles,Sintering,Vapor annealing
更新于2025-09-19 17:15:36
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Nonlinear Optical Properties of Zinc Oxide Thin Films Produced by Pulsed Laser Deposition
摘要： In this work, the nonlinear optical properties of Zinc Oxide (ZnO) thin films produced on microscope slide glass substrates at room temperature (RT) using Pulsed Laser Deposition (PLD) method has been presented. PLD system consists of a vacuum chamber (pumped by a turbo molecular pump, backed with a rotary pump), rotating sample and substrate holders, optical thickness measurement system, infrared temperature measurement system and a nanosecond laser system. Previously deposition vacuum chamber evacuated down to ~10-8 mbar and deposition was taken place about 1.3×10-1 mbar oxygen background gas pressure value. Morphological properties of thin films were obtained by Atomic Force Microscopy (AFM) that shows homogenous and smooth film structure. Thin films crystallinity were investigated by using X-Ray Diffraction (XRD) method and showed that polycrystalline ZnO structure with the largest peak corresponding to (002) orientation but some films contain Zn with (101) orientation . The thicknesses of the films were deduced from reflectance measurement using a fitting software and crosschecked with profilometer and AFM measurements. The thickness of the films ranged between 10 nm and 220 nm. Linear optical properties were obtained by using UV-VIS Spectrometer. Furthermore, we presented the nonlinear optical properties of the ZnO thin films that were obtained by the z-scan method.
关键词： Z-scan system,Zinc Oxide Thin Film,Nonlinear Optical Properties,Pulsed Laser Deposition
更新于2025-09-12 10:27:22
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Effects of ultraviolet photon irradiation and subsequent thermal treatments on solution-processed amorphous indium gallium zinc oxide thin films
摘要： Effects of exposure to ultraviolet (UV) photons and thermal treatments on solution-processed amorphous indium gallium zinc oxide (a-IGZO) films were investigated by X-ray photoelectron spectroscopy (XPS) and photoluminescence (PL) spectroscopy. As a result, oxygen vacancies obviously become more abundant in the films sintered at 250 or 300 ?C by the exposure to 7.21 eV photons and less abundant by the subsequent thermal treatment at 250 ?C in air. The drain current also clearly becomes smaller in a thin film transistor fabricated using the IGZO film in a manner opposite to the abundance of oxygen vacancies. That is, the drain current becomes smaller by the UV irradiation and returns to the original high value by the subsequent thermal treatment. This indicates that oxygen vacancies act as trapping centers or scattering centers of electrons. In addition, the reversible change of the drain current with the cycle of UV irradiation and the thermal treatment opens the possibility of the use of the IGZO films as a UV sensor.
关键词： oxygen vacancies,amorphous indium gallium zinc oxide,thin film transistor,UV irradiation,thermal treatment
更新于2025-09-10 09:29:36
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Studies on zinc oxide thin films by chemical spray pyrolysis technique
摘要： Zinc oxide (ZnO) thin films were deposited by chemical spray pyrolysis (CSP) technique using zinc acetate dihydrate solutions on microscopic glass substrates by varying the precursor concentration. The prepared films were characterized structurally and optically, using the powder X-ray diffraction (XRD) and UV analysis and Photoluminescence analysis. Crystallographic properties were analyzed through powder XRD. The XRD patterns shows a hexagonal structure with c-axis orientation (0 0 2) on self texturing phenomenon. Optical transmittance properties of the optimized ZnO thin films were investigated by using UV-Vis spectroscopy. The optical studies predicated a maximum transmittance in the range of above 70% with direct band gap values in the range of 2.9 to 3.2eV for the zinc oxide thin films. Under excitation of 300 nm radiations, sharp deep level emission peak at 2.506 eV dominates the photoluminescence spectra with weak deep level and near band edge emission peak at 3.026 and 3.427 eV respectively.
关键词： Photoluminescence,Transparent conducting oxide (TCO),UV-Vis,Zinc Oxide thin film,CSP technique,X-ray diffraction (XRD)
更新于2025-09-09 09:28:46
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The Effect of the Thickness and Oxygen Ratio Control of Radio-Frequency Magnetron Sputtering on MgZnO Thin-Film Transistors
摘要： In this study, we use silicon dioxide for a magnesium-zinc-oxide thin-film transistor gate dielectric layer, controlling the thickness of the active layer and the Mg content of the film by radio-frequency (RF) sputtering. With an ideal thickness, a magnesium-zinc-oxide thin-film transistor can function normally. As the active layer thickness is controlled at 10 nm and the sputtering oxygen-flow rate is controlled at 14% to properly compensate for the oxygen vacancies, we can obtain the best features. The result of the analysis showed a field-effect mobility of 5.65 cm2/V · s, a threshold voltage of 3.1 V, a subthreshold swing improved to 0.80, and a current-switch ratio of over five orders of magnitude.
关键词： RF Sputtering,Magnesium Zinc Oxide,Thin-Film Transistor
更新于2025-09-09 09:28:46