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Effects of Zn <sup>2+</sup> and Ga <sup>3+</sup> doping on the quantum yield of cluster-derived InP quantum dots
摘要： As the commercial display market grows, the demand for low-toxicity, highly emissive, and size-tunable semiconducting nanoparticles has increased. Indium phosphide quantum dots represent a promising solution to these challenges; unfortunately, they typically suffer from low inherent emissivity resulting from charge carrier trapping. Strategies to improve the emissive characteristics of indium phosphide often involve zinc incorporation into or onto the core itself and the fabrication of core/shell heterostructures. InP clusters are high fidelity platforms for studying processes such as cation exchange and surface doping with exogenous ions since these clusters are used as single-source precursors for quantum dot synthesis. Here, we examined the incorporation of zinc and gallium ions in InP clusters and the use of the resultant doped clusters as single-source precursors to emissive heterostructured nanoparticles. Zinc ions were observed to readily react with InP clusters, resulting in partial cation exchange, whereas gallium resisted cluster incorporation. Zinc-doped clusters effectively converted to emissive nanoparticles, with quantum yields strongly correlated with zinc content. On the other hand, gallium-doped clusters failed to demonstrate improvements in quantum dot emission. These results indicate stark differences in the mechanisms associated with aliovalent and isovalent doping and provide insight into the use of doped clusters to make emissive quantum dots.
关键词： Indium phosphide,core/shell heterostructures,quantum yield,gallium doping,quantum dots,zinc doping
更新于2025-09-11 14:15:04
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Low-temperature solution-combustion-processed Zn-Doped Nb2O5 as an electron transport layer for efficient and stable perovskite solar cells
摘要： Niobium oxide (Nb2O5) has been demonstrated as an ideal electron transport layer (ETL) material for perovskite solar cells (PSCs) due to its excellent optical transmittance and high carrier mobility. Herein, a low-temperature (200°C) solution-combustion method is adopted to prepare the Nb2O5 film used as an ETL in PSCs. Under optimized conditions, PSC with the Nb2O5 ETL obtains a power conversion efficiency (PCE) of 16.40%. Moreover, we find that Zn-doping of Nb2O5 can further improve the efficiency of the device. As a matter of fact, the results show that a champion PCE of 17.70% can be achieved for the PSC with a 5 mol% Zn-doped Nb2O5 ETL. Significantly, both Nb2O5- and Zn-doped Nb2O5-based devices exhibit obviously better stability than the traditional high-temperature-sintered (~500°C) mesoporous TiO2-based devices, maintaining 80% of their initial PCE after storage in air for 20 days. In contrast, the PCE of the device with a TiO2 ETL quickly drops to 30% of its initial value after 13 days under the same storage condition. Consequently, this work suggests that using Zn-doped Nb2O5 ETL prepared by the low-temperature solution-combustion method is promising towards efficient and stable perovskite solar cells.
关键词： Perovskite solar cells,Electron transport layer,Zinc doping,Niobium oxide,Low-temperature synthesis,Stability
更新于2025-09-11 14:15:04