摘要： Niobium oxide (Nb2O5) has been demonstrated as an ideal electron transport layer (ETL) material for perovskite solar cells (PSCs) due to its excellent optical transmittance and high carrier mobility. Herein, a low-temperature (200°C) solution-combustion method is adopted to prepare the Nb2O5 film used as an ETL in PSCs. Under optimized conditions, PSC with the Nb2O5 ETL obtains a power conversion efficiency (PCE) of 16.40%. Moreover, we find that Zn-doping of Nb2O5 can further improve the efficiency of the device. As a matter of fact, the results show that a champion PCE of 17.70% can be achieved for the PSC with a 5 mol% Zn-doped Nb2O5 ETL. Significantly, both Nb2O5- and Zn-doped Nb2O5-based devices exhibit obviously better stability than the traditional high-temperature-sintered (~500°C) mesoporous TiO2-based devices, maintaining 80% of their initial PCE after storage in air for 20 days. In contrast, the PCE of the device with a TiO2 ETL quickly drops to 30% of its initial value after 13 days under the same storage condition. Consequently, this work suggests that using Zn-doped Nb2O5 ETL prepared by the low-temperature solution-combustion method is promising towards efficient and stable perovskite solar cells.