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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
摘要： In this paper, we have investigated the effects of yttrium (Y) doping on the electrical performance and stability of ZnO thin film transistors (TFTs). Here, Y-doped ZnO TFTs were fabricated by using radio frequency magnetron sputtering at 150 °C. As a result, the 1% Y-doped ZnO TFT exhibits a small threshold voltage shifts of 2.5 V under positive bias stress and ?2.8 V under negative bias stress as well as desirable device performance with field effect mobility of 9.8 cm2/V s, a subthreshold swing of 320 mV/decade and on/off current ratio of 107, respectively. Based on the XPS analysis and electrical characterizations, the improvement in stability and electrical properties of ZnO TFTs were attributed to the appropriate Y doping concentration, which not only could control the carrier concentration and broaden the band gap of ZnO film, but also suppress the oxygen vacancy defects and passivate the trap density at the SiO2/ZnO interfaces. Consequently, the high stability and excellent electrical performances of Y-doped ZnO TFTs show great potential for use in flat panel displays.
关键词： Doping,Zinc oxide (ZnO),Thin film transistors (TFTs),Bias stress stability
更新于2025-09-23 15:22:29
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An In-Depth Study on Electrical and Hydrogen Sensing Characteristics of ZnO Thin Film with Radio Frequency Sputtered Gold Schottky Contacts
摘要： Electrical and hydrogen sensing characteristics of radio frequency sputtered Au/ZnO thin film Schottky diodes on n-silicon substrate have been investigated over a wide temperature range. Current-voltage characterizations of the device in the temperature range of 25°C to 200°C confirm its excellent rectifying property with forward to reverse current ratio of 1610 at an external bias of 5 V. Ideality factor in the range of 4.12 to 2.98 is obtained for Au/ZnO Schottky diode in the aforementioned temperature range, at atmospheric conditions. On exposing diode to hydrogen, a reduction in ideality factor is observed which makes thermionic emission more prominent. The proposed device has proven to be hydrogen sensitive, on account of the lateral shift observed in I ? V characteristics at different hydrogen concentrations (50 ppm-1000 ppm). Maximum barrier height variation of 99 meV and sensitivity of 144% have been observed at 1000 ppm hydrogen at 200°C. A Detailed perusal of the steady-state reaction kinetics of the sensor using I ? V characteristics affirmed that the atomistic hydrogen adsorption at Au/ZnO interface is accountable for the barrier height modulation. The studied sensor depicts remarkable performance for high-temperature detection.
关键词： Hydrogen sensing,Zinc oxide (ZnO) thin film,Electrical characteristics,Schottky diode,Metal-semiconductor interface,Palladium catalyst
更新于2025-09-23 15:22:29