1：Experimental Design and Method Selection:

Y-doped ZnO TFTs were fabricated using radio frequency magnetron sputtering at 150°C to study the effects of Y doping on electrical performance and stability. Theoretical models include equations for electron concentration, field-effect mobility, subthreshold swing, and total trap density.

2：Sample Selection and Data Sources:

ZnO-based thin films were deposited on SiO2/Si substrates using ceramic targets (ZnO 99.99%, 0.5% Y-ZnO, 1% Y-ZnO, 2% Y-ZnO) in argon atmosphere.

3：99%, 5% Y-ZnO, 1% Y-ZnO, 2% Y-ZnO) in argon atmosphere. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: RF magnetron sputtering system, keysight Semiconductor Parameter Analyzer B1500A, B2912A, Lake Shore TTPX Probe Station, UV-visible absorption spectrometer (UV-250), atomic force microscope (AFM), X-ray photoelectron spectroscopy (XPS, Thermo Fisher ESCALAB 250Xi), SiO2/Si substrates, ceramic targets.

4：Experimental Procedures and Operational Workflow:

Films deposited by RF sputtering, electrical properties and bias stress stability measured using parameter analyzers and probe station, optical transmittance and absorption measured with UV spectrometer, surface morphologies obtained with AFM, chemical compositions analyzed with XPS.

5：Data Analysis Methods:

Data analyzed using equations for electron concentration, mobility, subthreshold swing, and trap density; statistical techniques not specified.