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- 2018
- Lorentzian influence
- optical flow
- additive white Gaussian noise
- 2D vector
- Materials characterization
- laser additive manufacturing
- selective laser sintering
- Additive manufacturing
- selective laser melting
- Optoelectronic Information Science and Engineering
- Mechanical Engineering
- University of Johannesburg
- Assumption University
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Exploiting In Situ Redox and Diffusion of Molybdenum to Enable Thin-Film Circuitry for Low-Cost Wireless Energy Harvesting
摘要： Direct additive fabrication of thin-film electronics using a high-mobility, wide-bandgap amorphous oxide semiconductor (AOS) can pave the way for integration of efficient power circuits with digital electronics. For power rectifiers, vertical thin-film diodes (V-TFDs) offer superior efficiency and higher frequency operation compared to lateral thin-film transistors (TFTs). However, the AOS V-TFDs reported so far require additional fabrication steps and generally suffer from low voltage handling capability. Here, these challenges are overcome by exploiting in situ reactions of molybdenum (Mo) during the solution-process deposition of amorphous zinc tin oxide film. The oxidation of Mo forms the rectifying contact of the V-TFD, while the simultaneous diffusion of Mo increases the diode’s voltage range of operation. The resulting V-TFDs are demonstrated in a full-wave rectifier for wireless energy harvesting from a commercial radio-frequency identification reader. Finally, by using the same Mo film for V-TFD rectifying contacts and TFT gate electrodes, this process allows simultaneous fabrication of both devices without any additional steps. The integration of TFTs alongside V-TFDs opens a new fabrication route for future low-cost and large-area thin-film circuitry with embedded power management.
关键词： additive fabrication,amorphous oxide semiconductors,thin-film circuitry,large-area electronics,solution process
更新于2025-09-04 15:30:14
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Piezoelectric Property Enhancement of PZT Thick Film via Pulsed Flash Poling during Sintering
摘要： Lead zirconate titanate (PZT) is a widely used piezoelectric material due to its high piezoelectric response. High temperature thermal sintering and poling are two important steps to obtain a high piezoelectric property PZT film by densifying the film and reorienting the dipoles along the desired direction, respectively. However, these two steps are processed separately, which increases the duration and complexity of the process. Moreover, high temperature process limits the selection of electrode and substrate material to those with very high melting points. This paper experimentally demonstrates the feasibility of processing sintering and poling simultaneously providing a novel approach to prepare PZT film. Moreover, this paper investigates the effect of cyclic temperature excursions above and below the Curie temperature on the piezoelectric properties of PZT thick film. Photonic sintering with high intensity short duration pulsed flashes was used to fuse and merge PZT particles. Simultaneously, electrical poling field (20 kV/cm) was applied through the PZT film to reorient the PZT dipoles. The entire processing duration is less than 5 minutes. The resulted piezoelectric property of the PZT film was analyzed yielding high g33 (22.6 ×10-3 V-m/N), d33 (626 × 10-12 m/V), and permittivity (3130) indicating good sensing and actuating capabilities. This enhanced piezoelectric performance is superior to the groups of PZT films prepared using traditional process. This approach has potential applications for obtaining high performance piezoelectric devices, such as piezoelectric energy harvesters, memories, or bulk acoustic wave resonators.
关键词： piezoelectric,PZT,poling,photonic sintering,additive manufacturing,pulsed flash
更新于2025-09-04 15:30:14