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The effect of Zn3N2 phase decomposition on the properties of highly-doped ZnO: Al, N films
摘要： Study of Al-N simultaneous doping and thermal annealing influence on the properties of ZnO films is very important for achievement as p-type conductivity in the films as for improvement the performance of ZnO-based ultraviolet detectors. Highly-doped ZnO:Al,N films containing the Zn3N2 phase (ZnO:Al,N-Zn3N2) were grown on Si substrates by magnetron sputtering using a layer-by-layer growth technique. Our work presents a comparative study of the structure, optical and electronic properties of highly-doped as-grown and annealed ZnO:Al,N films. It was shown that the thermal annealing of ZnO:Al,N-Zn3N2 film at atmospheric conditions allows to decompose the Zn3N2 phase. The features of this phenomena on the properties of ZnO:Al,N films were investigated and discussed in detail by using X-ray diffraction, energy dispersive X-ray analysis, Raman scattering, photoluminescence, X-ray photoelectron spectroscopy and X-ray emission spectroscopy.
关键词： Radio-frequency magnetron sputtering,Zinc oxide,Nitrogen-aluminum doping,Photoluminescence,X-ray photoelectron spectroscopy,Thin films,X-ray diffraction,Raman scattering
更新于2025-09-23 15:21:01
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Electrical, Structural, Optical, and Adhesive Characteristics of Aluminum-Doped Tin Oxide Thin Films for Transparent Flexible Thin-Film Transistor Applications
摘要： The properties of Al-doped SnOx films deposited via reactive co-sputtering were examined in terms of their potential applications for the fabrication of transparent and flexible electronic devices. Al 2.2-atom %-doped SnOx thin-film transistors (TFTs) exhibit improved semiconductor characteristics compared to non-doped films, with a lower sub-threshold swing of ~0.68 Vdec?1, increased on/off current ratio of ~8 × 107, threshold voltage (Vth) near 0 V, and markedly reduced (by 81%) Vth instability in air, attributable to the decrease in oxygen vacancy defects induced by the strong oxidizing potential of Al. Al-doped SnOx films maintain amorphous crystallinity, an optical transmittance of ~97%, and an adhesive strength (to a plastic substrate) of over 0.7 kgf/mm; such films are thus promising semiconductor candidates for fabrication of transparent flexible TFTs.
关键词： tin oxide,thin-film transistor,aluminum doping,adhesive property,oxide semiconductor
更新于2025-09-19 17:15:36
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Increasing Laser-Doping Depth of Al in 4H-SiC by Using Expanded-Pulse Excimer Laser
摘要： Al doping into 4H-SiC performed by irradiating pulse-width-expanded excimer laser to an Al film deposited on the 4H-SiC surface is investigated. An optical pulse stretcher was constructed to produce the laser pulse whose peak intensity was reduced as half as that of the original pulse and pulse width was expanded from 55 ns to 100 ns. The irradiation of the expanded pulses is found to reduce the ablation of the materials from the surface and enable irradiation of multiple shots. As a result, Al doping depth is significantly increased. The multiple shots of the expanded pulses are also found to decrease the sensitivity to spatial non-uniformity of laser intensity and increase the uniformity of doped region.
关键词： excimer laser,p-type silicon carbide,aluminum doping,silicon carbide,laser doping,optical pulse stretcher
更新于2025-09-16 10:30:52
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UNDERSTANDING Al incorporation into 4H-SiC during epitaxy
摘要： In this paper are reviewed the main reported trends of Al incorporation as a function of the main 4H-SiC epitaxial growth parameters. Al incorporation was found to be limited by its high desorption rate for all the parameters investigated. Due to the lack of a general model describing reasonably the processes of Al incorporation, the concept of surface vacancy induced incorporation was proposed and applied to explain these experimental results. In this model, Al incorporation is mainly driven by the transient formation of Si vacancies at the surface or sub-surface of terraces. It was shown that for increasing Al incorporation, one needs to improve its stability upon adsorption on Si vacancy and/or to reduce its desorption time. In this model, the transient formation of C vacancies at the surface or sub-surface (favored at low C/Si ratio) is proposed to play also a role by destabilizing the incorporated Al atoms.
关键词： Silicon Carbide,model,epitaxy,surface vacancy,Aluminum doping
更新于2025-09-10 09:29:36