研究目的
To examine the properties of Al-doped SnOx films deposited via reactive co-sputtering for potential applications in transparent and flexible electronic devices, focusing on electrical, structural, optical, and adhesive characteristics.
研究成果
Al-doped SnOx films show improved semiconductor characteristics, reduced oxygen vacancies, high optical transmittance, and good adhesion to flexible substrates, making them suitable for transparent flexible TFT applications.
研究不足
The study is limited to specific Al doping concentrations (up to 2.24 atom %), room temperature and low-temperature (150°C) processing, and lacks long-term stability tests beyond 14 days. Adhesive strength was not measured quantitatively beyond the duct tape's capability.
1：Experimental Design and Method Selection:
Fabrication of bottom gate TFTs using RF reactive magnetron co-sputtering with Sn and Al targets in an O2/Ar gas mixture. Electrical, structural, optical, and adhesive properties were analyzed.
2：Sample Selection and Data Sources:
Samples with varying Al doping levels (0,
3：20, 24 atom %) were prepared on Si/SiO2 and polyimide substrates. List of Experimental Equipment and Materials:
Sputtering system, spectroscopic ellipsometer (MG-1000), field effect scanning electron microscope (S5300), XPS (Multilab 2000), Hall measurement system (HMS-5300), HR-XRD (D8 Discover), UV-visible spectrophotometer (UV-2450), peel tester (AD4935-50N), duct tape (GT2), source meter (2400). Materials include Sn (
4：0). Materials include Sn (999%) and Al (999%) targets, O2/Ar gas, Sn-doped In2O3 for electrodes. Experimental Procedures and Operational Workflow:
99.999%) and Al (99.999%) targets, O2/Ar gas, Sn-doped In2O3 for electrodes. 4. Experimental Procedures and Operational Workflow: Deposition of 10 nm thick films at room temperature, annealing at 150°C for 1h, electrical measurements with semiconductor analyzer, XPS analysis, Hall measurements, XRD, transmittance measurements, peel tests.
5：Data Analysis Methods:
XPS peak deconvolution, Hall effect calculations, Tauc plot for band gap, statistical analysis of electrical parameters.
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X-ray photoelectron spectroscopy
Multilab 2000
Thermo Scientific Ltd.
Used to analyze chemical compositions and bonding states of the films.
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UV-visible spectrophotometer
UV-2450
Shimadzu Corp.
Used to assess optical transmittance of the films.
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spectroscopic ellipsometer
MG-1000
Nano-View Co.
Used to confirm the thickness of the deposited films.
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field effect scanning electron microscope
S5300
Hitachi Inc.
Used to confirm the thickness and morphology of the films.
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Hall measurement system
HMS-5300
Ecopia
Used to measure carrier densities using the Van der Pauw configuration.
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high-resolution X-ray diffraction
D8 Discover
Bruker AXS Ltd.
Used to evaluate crystallinity of the films.
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peel tester stand
AD4935-50N
And Inc.
Used to measure adhesion strength between films and substrates.
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duct tape
GT2
3M Espe
Used in peel tests to evaluate adhesion.
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source meter
2400
Keithley Inc.
Used for four-point probing to measure sheet resistance.
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semiconductor analyzer
HP4145B
HP
Used to measure electrical performance of TFTs.
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