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P-1.1: Anomalous Dependence of Threshold Voltage on Channel Width and Drain Voltage in Back-channel-etched a-IGZO TFTs
摘要： The back-channel-etched (BCE) amorphous InGaZnO thin-film transistors with different channel widths (Ws) are fabricated. The performance of VTH depends on both channel width (W) and drain voltage (VD) in this work. It is shown that neither W nor VD can create influence in VTH when W or VD is relatively small. However, when both W and VD are large enough, there will be an anomalous phenomenon that VTH increases with the increasing W or the increasing VD. The self-heating effect can be used to account for this anomalous dependence of VTH on W and VD.
关键词： self-heating effect,drain voltage,threshold voltage,amorphous InGaZnO TFTs,channel width
更新于2025-09-23 15:23:52
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Light-illumination stability of amorphous InGaZnO thin film transistors in oxygen and moisture ambience
摘要： The light-illumination stability of amorphous InGaZnO Thin Film Transistors (a-IGZO TFTs) in oxygen and moisture ambience was in-depth characterized by both current-voltage (I-V) and capacitance-voltage (C-V) measurements. With the illuminated light wavelength decreasing, both I-V and C-V curves shifted negatively. When the ambient oxygen content or moisture level increased, the a-IGZO TFTs exhibited more stable properties under light illumination. A qualitative model was proposed to explain the related physical mechanism. The higher oxygen content or moisture level bene?ted the light-illumination-induced oxygen adsorption at back channels of a-IGZO TFTs and prevented the formation of oxygen vacancies (VO) in channel layers; the VO variation with the light illumination became more di?cult and hence led to better light-illumination stability of the corresponding TFT devices.
关键词： Thin ?lm transistor,Light-illumination stability,Amorphous InGaZnO,Ambient gases
更新于2025-09-23 15:23:52
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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Influence of Passivation Layers on Positive Gate Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors
摘要： Passivation (PV) layers could effectively improve the positive gate bias-stress (PGBS) stability of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs), whereas the related physical mechanism remains unclear. In this study, SiO2 or Al2O3 films with different thicknesses were used to passivate the a-IGZO TFTs, making the devices more stable during PGBS tests. With the increase in PV layer thickness, the PGBS stability of a-IGZO TFTs improved due to the stronger barrier effect of the PV layers. When the PV layer thickness was larger than the characteristic length, nearly no threshold voltage shift occurred, indicating that the ambient atmosphere effect rather than the charge trapping dominated the PGBS instability of a-IGZO TFTs in this study. The SiO2 PV layers showed a better improvement effect than the Al2O3 because the former had a smaller characteristic length (~5 nm) than that of the Al2O3 PV layers (~10 nm).
关键词： thin-film transistor (TFT),positive gate bias stress (PGBS),passivation layer,characteristic length,amorphous InGaZnO (a-IGZO)
更新于2025-09-23 15:21:21
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P-6.1: Asymmetric Effects of Gate-Bias Stress Voltage on the Stability under Positive and Negative Gate-Bias Stress of a-IGZO TFTs
摘要： The asymmetric effects of gate-bias stress voltage on the stability under positive gate-bias stress (PBS) and negative gate-bias stress (NBS) of amorphous InGaZnO thin-film transistors (a-IGZO TFTs) are investigated. It is observed that under PBS, the threshold voltage shift (?Vth) increases with the increased value of the gate-bias stress voltage (VStress), which is due to the enhanced electron trapping at/near the interface of the channel and the gate insulator. However, under NBS, the ?Vth is nearly unaffected by the Vstress. As the NBS-induced negative ?Vth is resulted from electron-detrapping from the donor-like states related to oxygen vacancies, it is supposed that the rate of electron-detrapping is not sensitive to the negative gate-bias voltage. The influence of N2O plasma back-channel treatment is also studied. The stability under NBS is effectively improved after the N2O plasma treatment, which originates from the decreased density of oxygen-vacancy related donor-like states within the a-IGZO channel layer.
关键词： thin-film transistors,N2O plasma treatment.,amorphous InGaZnO,gate-bias stress,stability
更新于2025-09-10 09:29:36