研究目的
Investigating the effect of passivation layers on the stability of amorphous InGaZnO thin-film transistors under positive gate bias stress.
研究成果
Passivation layers significantly improve the PGBS stability of a-IGZO TFTs by preventing ambient atmosphere effects. SiO2 layers are more effective than Al2O3 due to their smaller characteristic length. The study suggests that SiO2 is preferable for passivating a-IGZO TFTs in flexible panel display applications.
研究不足
The study focuses on the effects of SiO2 and Al2O3 passivation layers under specific conditions (e.g., humidity levels). The findings may not be directly applicable to other passivation materials or different environmental conditions.
1：Experimental Design and Method Selection:
Inverted staggered a-IGZO TFTs were fabricated with SiO2 or Al2O3 passivation layers of varying thicknesses. The electrical characteristics were measured under different relative humidity conditions.
2：Sample Selection and Data Sources:
P-type silicon wafers with thermal SiO2 were used as substrates. a-IGZO films and ITO films were deposited as channel layers and source/drain electrodes, respectively.
3：List of Experimental Equipment and Materials:
RF magnetron sputtering system for depositing a-IGZO and passivation layers, DC magnetron sputtering for ITO electrodes, and a 2636 A parameter analyzer for electrical measurements.
4：Experimental Procedures and Operational Workflow:
Devices were fabricated, passivated with varying thicknesses of SiO2 or Al2O3, annealed, and then subjected to PGBS tests under controlled humidity.
5：Data Analysis Methods:
Threshold voltage shifts (ΔVth) were measured and analyzed to assess the stability of the TFTs under PGBS.
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