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High speed antimony-based superlattice photodetectors transferred on sapphire
摘要： We report the substrate transfer of InAs/GaSb/AlSb based type-II superlattice (T2SL) e-SWIR photodetector from native GaSb substrates to low-loss sapphire substrate in order to enhance the frequency response of the device. We have demonstrated the damage-free transfer of T2SL-based thin-films to sapphire substrate using top–down processing and a chemical epilayer release technique. After transfer the ?3 dB cut-off frequency increased from 6.4 GHz to 17.2 GHz, for 8 μm diameter circular mesas under ?15 V applied bias. We also investigated the cut-off frequency verses applied bias and lateral scaling to assess the limitations for even higher frequency performance.
关键词： high speed,photodetectors,substrate transfer,antimony-based superlattice,sapphire
更新于2025-09-19 17:13:59
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N-Type Heavy Doping with Ultralow Resistivity in Ge by Sb Deposition and Pulsed Laser Melting
摘要： The fabrication of highly doped and high quality Ge layers is a challenging and hot topic for advancements in nanoelectronics, photonics and radiation detectors. In this article, we report on a simple method for junction formation consisting in sputter depositing or evaporating a thin pure Sb layer on Ge followed by cycles of Pulsed Laser Melting (PLM). We show that PLM promotes an efficient diffusion of high Sb concentrations into the melted Ge subsurface layer, followed by a fast epitaxial regrowth. The resulting layer is perfectly pseudomorphic to the Ge substrate, preserving the high strain level induced by the Sb, having covalent radius higher than Ge. In addition, it shows extremely high active concentrations up to 3x1020 cm-3 and a record low resistivity of 1.4x10-4 Ohm cm. The carrier mobility is also in line with the extrapolation of literature data with no signs of mobility degradation. Furthermore, infrared reflectivity confirms the good optical quality of the doped layers and demonstrates, for the first time, plasma wavelengths in Ge below 3 μm. These results are highly relevant for nanolectronic and plasmonic applications.
关键词： Plasmonics,Laser processing,Doping,Germanium,Antimony
更新于2025-09-16 10:30:52
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Ultrafast self-trapping of photoexcited carriers sets the upper limit on antimony trisulfide photovoltaic devices
摘要： Antimony trisulfide (Sb2S3) is considered to be a promising photovoltaic material; however, the performance is yet to be satisfactory. Poor power conversion efficiency and large open circuit voltage loss have been usually ascribed to interface and bulk extrinsic defects. By performing a spectroscopy study on Sb2S3 polycrystalline films and single crystal, we show commonly existed characteristics including redshifted photoluminescence with 0.6 eV Stokes shift, and a few picosecond carrier trapping without saturation at carrier density as high as approximately 1020 cm?3. These features, together with polarized trap emission from Sb2S3 single crystal, strongly suggest that photoexcited carriers in Sb2S3 are intrinsically self-trapped by lattice deformation, instead of by extrinsic defects. The proposed self-trapping explains spectroscopic results and rationalizes the large open circuit voltage loss and near-unity carrier collection efficiency in Sb2S3 thin film solar cells. Self-trapping sets the upper limit on maximum open circuit voltage (approximately 0.8 V) and thus power conversion efficiency (approximately 16 %) for Sb2S3 solar cells.
关键词： Carrier dynamics,Self-trapping,Solar cells,Antimony trisulfide,Photovoltaic material
更新于2025-09-16 10:30:52
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Facile bioactive yeast cell templated synthesis of laser stealth antimony doped tin oxide hollow microspheres
摘要： Hollow antimony-doped tin oxide (ATO) microspheres with a diameter of 2.0–3.0 μm and ellipsoidal morphology were successfully prepared through a co-precipitation route. The prepared ATO microspheres possessed more Sb5+ and 73.5 m2 g?1 specific surface area. These ATO hollow microspheres showed a widened infrared absorption phenomenon in the infrared band of 850–2000 nm. The near-infrared reflection was obviously lower than ATO nanoparticles. Additionally, the reflectance of ATO hollow microspheres was approximately 7% at 1064 nm, indicating better laser reflection properties.
关键词： Hollow microspheres,Antimony-doped tin oxide (ATO),Bio-template,Laser reflection
更新于2025-09-16 10:30:52
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Water Additive Enhanced Solution Processing of Alloya??Sb <sub/>2</sub> (S <sub/>1a??x</sub> Se <sub/>x</sub> ) <sub/>3</sub> Based Solar Cells
摘要： Solution process is a convenient and cost-effective approach to depositing thin film for optoelectronic devices. The quality of as-prepared films depends critically on the applied precursor materials as well as solvents. In this study, we develop a method to synthesize Sb2(S1-xSex)3 thin film and demonstrate the role played by water during the film formation. In the synthesis, antimony trichloride, selenourea and thiourea used as Sb, Se and S sources are dissolved by N, N-dimethylformamide, dimethyl sulfoxide mixed solvent. We find that tiny amount of water (1%) in the solution enables essential increase in grain size that in turn facilitates carrier transport and suppresses recombination. The deep level transient spectroscopy analysis shows that water additive helps to reduce defect density and type in the as-obtained films. Finally, the improved film quality leads to a certified power conversion efficiency of 7.42%, a top efficiency in Sb2(S,Se)3 based solar cells regardless of the device configurations. This study provides an effective approach to tailor the optoelectronic properties of Sb2(S,Se)3 and a practical strategy to improve the device efficiency.
关键词： antimony selenosulfide,Sb2(S1-xSex)3,solar cell,defect,water additive
更新于2025-09-16 10:30:52
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Antimony doped tin oxide/polyethylenimine electron selective contact for reliable and light soaking-free high performance inverted organic solar cells
摘要： We have demonstrated a high-performance low temperature solution processed electron selective contact consisting of 10 at. % antimony doped tin oxide (ATO) and the neutral polymer polyethylenimine (PEI). Inverted organic photovoltaics (OPVs) utilizing ATO/PEI as electron selective contact exhibited high power conversion efficiencies for both the reference P3HT:PCBM and the nonfullerene based P3HT:IDTBR active layer OPV material systems. Importantly, it is shown that the proposed ATO/PEI carrier selective contact provides light soaking-free inverted OPVs. Furthermore, by increasing the thickness of the ATO layer from 40 to 120 nm, the power conversion efficiency of the corresponding inverted OPVs remain unaffected, a parameter which indicates the potential of the proposed ATO/PEI carrier selective contact for high performance light-soaking-free and reliable roll-to-roll printing solutions processed inverted OPVs.
关键词： inverted organic solar cells,antimony doped tin oxide,polyethylenimine,light soaking-free,electron selective contact
更新于2025-09-12 10:27:22
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Semitransparent Sb <sub/>2</sub> S <sub/>3</sub> thin film solar cells by ultrasonic spray pyrolysis for use in solar windows
摘要： The integration of photovoltaic (PV) solar energy in zero-energy buildings requires durable and efficient solar windows composed of lightweight and semitransparent thin film solar cells. Inorganic materials with a high optical absorption coefficient, such as Sb2S3 (>105 cm?1 at 450 nm), offer semitransparency, appreciable efficiency, and long-term durability at low cost. Oxide-free throughout the Sb2S3 layer thickness, as confirmed by combined studies of energy dispersive X-ray spectroscopy and synchrotron soft X-ray emission spectroscopy, semitransparent Sb2S3 thin films can be rapidly grown in air by the area-scalable ultrasonic spray pyrolysis method. Integrated into a ITO/TiO2/Sb2S3/P3HT/Au solar cell, a power conversion efficiency (PCE) of 5.5% at air mass 1.5 global (AM1.5G) is achieved, which is a record among spray-deposited Sb2S3 solar cells. An average visible transparency (AVT) of 26% of the back-contact-less ITO/TiO2/Sb2S3 solar cell stack in the wavelength range of 380–740 nm is attained by tuning the Sb2S3 absorber thickness to 100 nm. In scale-up from mm2 to cm2 areas, the Sb2S3 hybrid solar cells show a decrease in efficiency of only 3.2% for an 88 mm2 Sb2S3 solar cell, which retains 70% relative efficiency after one year of non-encapsulated storage. A cell with a PCE of 3.9% at 1 sun shows a PCE of 7.4% at 0.1 sun, attesting to the applicability of these solar cells for light harvesting under cloud cover.
关键词： solar windows,ultrasonic spray pyrolysis,antimony sulfide,semitransparent solar cells,thin films
更新于2025-09-12 10:27:22
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Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb <sub/>2</sub> S <sub/>3</sub> Absorber by Atomic Layer Deposition
摘要： The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.
关键词： interfacial layer,extremely thin absorber,transient absorption,atomic layer deposition,antimony sulfide,ultrathin layer
更新于2025-09-12 10:27:22
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Double perovskite Cs4CuSb2Cl12 microcrystalline device for cost effective photodetector applications
摘要： Recently reported double perovskites (DPs), Cs4CuSb2Cl12 has led to the development of a new lead free perovskite. It is 1 eV band gap material. The perovskite microcrystals were synthesized via liquid phase method. This was investigated as active solar energy materials for visible-light photodetector. The microcrystalline device was made in a single-step printable Cs4CuSb2Cl12/carbon materials composite paste. 10 wt % active material composite was found to be the best candidate for the highest responsivity, 10 ―3 A/W and detectivity, 108 J. One-step printing of the composite paste can be used for cost effective photodetector applications.
关键词： Photodetector,Solar energy materials,Cesium Copper Antimony Chloride (Cs4CuSb2Cl12),Carbon materials,Double Perovskite
更新于2025-09-12 10:27:22
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(3-phenylpyridin-1-ium)SbI4: Coulomb interaction-assembled Lead-free hybrid perovskite-like semiconductor
摘要： The environmental toxicity of Pb in inorganic-organic hybrid perovskite presents a major hurdle to commercialization, which trigger intense research on exploring Pb-free alternatives. Soft interaction, especially Coulomb interaction not only enriching the synthesis strategy but endowing unique property to the derived materials, is appealing for constructing Pb-free alternatives, however is less reported. We herein demonstrate the construction of a Sb-based hybrid perovskite-like semiconductor (3-phenylpyridin-1-ium)SbI4 (denoted as 3ppi-SbI4) via the “Coulomb interaction strategy”. Therein, the zigza (SbI4)– chains interact with the 3ppi countercations through Coulomb interaction-only in the crystal lattice. It has good moisture, sunlight and UV light stabilities. Further, 3ppi-SbI4 exhibits excellent light absorption, direct band-gap feature, good photoconduction, and excellent repeatability of photocurrent, which all imply its potential as a Pb-free light-absorbing candidate for optoelectronic application. Theoretical calculations disclose that the photo response is mainly ascribe to the electron transitions within (SbI4)– chains, as well as between inorganic and organic moieties.
关键词： hybrid perovskite,photoconduction,Antimony,Coulomb interaction,semiconductor
更新于2025-09-12 10:27:22