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Antimony‐Doped Tin Oxide as Transparent Back Contact in Cu <sub/>2</sub> ZnSnS <sub/>4</sub> Thin‐Film Solar Cells
摘要： Antimony-doped tin oxide (Sn2O3:Sb, ATO) is investigated as a transparent back contact for Cu2ZnSnS4 (CZTS) thin-film solar cells. The stability of the ATO under different anneal conditions and the effect from ATO on CZTS absorber growth are studied. It is found that ATO directly exposed to sulfurizing anneal atmosphere reacts with S, but when covered by CZTS, it does not deteriorate when annealed at T< 550 °C. The electrical properties of ATO are even found to improve when CZTS is annealed at T= 534 °C. At T= 580 °C, it is found that ATO reacts with S and degrades. Analysis shows repeatedly that ATO affects the absorber growth as large amounts of Sn-S secondary compounds are found on the absorber surfaces. Time-resolved anneal series show that these compounds form early during anneal and evaporate with time to leave pinholes behind. Device performance can be improved by addition of Na prior to annealing. The best CZTS device on ATO back contact herein has an efficiency of 2.6%. As compared with a reference on a Mo back contact, a similar open-circuit voltage and short-circuit current density are achieved, but a lower fill factor is measured.
关键词： antimony-doped tin oxides,sulfurization,thin-film solar cells,transparent back contacts,Cu2ZnSnS4
更新于2025-09-11 14:15:04
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Efficient Copper‐Doped Antimony Sulfide Thin‐Film Solar Cells via Coevaporation Method
摘要： Sb2S3 being a light-absorbing material is used for photovoltaic (PV) application due to its superior stability and progressive power conversion efficiency (PCE) benefiting from its low cost, less toxic, earth-abundant, and facile nature. Due to the difficulty in efficient doping for such 1D structure, the performance of as-fabricated thin-film solar cells is limited by high resistivity and hole extraction barrier. Herein, a coevaporation scheme is introduced for copper-doped Sb2S3 by rapid thermal evaporation (RTE). The Cu-doped Sb2S3 thin film discloses the enhanced crystallinity with a grain diameter greater than 1 μm and conductivity along with improved carrier concentration. At the same time, the deep valance band obtains a minor upshift, favoring the hole extraction at back contact. Consequently, all the PV parameters are enhanced leading to the PCE boosting from 4.18% to 4.61%. Herein, a facile doping technique is demonstrated to improve its performance without any modification of the present RTE method.
关键词： efficient doping,antimony sulfide,preferred orientation,contact barrier,solar cells
更新于2025-09-11 14:15:04
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Comparison of Clusters Produced from Sb2Se3 Homemade Polycrystalline Material, Thin Films, and Commercial Polycrystalline Bulk Using Laser Desorption Ionization with Time of Flight Quadrupole Ion Trap Mass Spectrometry
摘要： This study compared Sb2Se3 material in the form of commercial polycrystalline bulk, sputtered thin film, and homemade polycrystalline material using laser desorption ionization (LDI) time of flight mass spectrometry with quadrupole ion trap mass spectrometry. It also analyzed the stoichiometry of the SbmSen clusters formed. The results showed that homemade Sb2Se3 bulk was more stable compared to thin film; its mass spectra showed the expected cluster formation. The use of materials for surface-assisted LDI (SALDI), i.e., graphene, graphene oxide, and C60, significantly increased the mass spectra intensity. In total, 19 SbmSen clusters were observed. Six novel, high-mass clusters—Sb4Se4+, Sb5Se3-6+, and Sb7Se4+—were observed for the first time when using paraffin as a protective agent.
关键词： Antimony selenide,Clusters,Laser desorption ionization,Paraffin,Chalcogenides
更新于2025-09-11 14:15:04
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Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure
摘要： Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.
关键词： hole-transporting layer,n-i-p structure,solution process,poly(3-hexylthiophene),antimony Selenide,thin film solar cell
更新于2025-09-11 14:15:04
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Laser Treatment as Sintering Process for Dispenser Printed Bismuth Telluride Based Paste
摘要： Laser sintering as a thermal post treatment method for dispenser printed p- and n-type bismuth telluride based thermoelectric paste materials was investigated. A high-power fiber laser (600 W, 1064 nm) was used in combination with a scanning system to achieve high processing speed. A Design of Experiment (DoE) approach was used to identify the most relevant processing parameters. Printed layers were laser treated with different process parameters and the achieved sheet resistance, electrical conductivity, and Seebeck coefficient are compared to tube furnace processed reference specimen. For p-type material, electrical conductivity of 22 S/cm was achieved, compared to 15 S/cm in tube furnace process. For n-type material, conductivity achieved by laser process was much lower (7 S/cm) compared to 88 S/cm in furnace process. Also, Seebeck coefficient decreases during laser processing (40–70 μV/K and ?110 μV/K) compared to the oven process (251 μV/K and ?142 μV/K) for p- and n-type material. DoE did not yet deliver a set of optimum processing parameters, but supports doubts about the applicability of area specific laser energy density as a single parameter to optimize laser sintering process.
关键词： additive manufacturing,design of experiment,laser sintering,thermoelectric,antimony telluride,bismuth telluride
更新于2025-09-11 14:15:04
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Sequential deposition route to efficient Sb <sub/>2</sub> S <sub/>3</sub> solar cells
摘要： We report a facile two-step sequential deposition method to prepare Sb2S3 thin films, where antimony acetate and thiourea are utilized as antimony and sulfur sources, respectively. The sequential deposition of two precursor materials followed by swift annealing at mild temperature leads to high-quality Sb2S3 films. The detailed reaction mechanism is revealed on the basis of structural and compositional analyses. By optimizing the concentration of thiourea and annealing temperature, uniform and flat Sb2S3 thin films are obtained with either sulfur-deficiency or sulfur richness. Finally, a planar heterojunction solar cell based on the as-prepared Sb2S3 film delivers a high power conversion efficiency of 5.69%, which is a top value for planar heterojunction Sb2S3 solar cells fabricated by a solution approach. This research provides a convenient and low-cost approach for the deposition of Sb2S3 films for efficient solar cell applications.
关键词： antimony acetate,Sb2S3,sequential deposition,thiourea,solar cells
更新于2025-09-11 14:15:04
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Adapted Pechini method to prepare DSA type electrodes of RuO2-ZrO2 doped with Sb2O5 over titanium plates
摘要： This paper describes a thermal method to obtain metal oxides on a titanium substrate surface. This adapted Pechini method is a versatile, easy to handle and scalable technique to obtain electrodes for industrial uses, such as Dimensionally Stable Anodes (DSA). This method has advantages over other thermal methods like dip coating or sputtering, as it needs a smaller amount of polymeric mixture than dip coating method to cover the same area and is less expensive than sputtering method. The thermal method described herein to prepare DSA type electrodes of RuO2-ZrO2 doped with Sb2O5 over titanium plates needs no sophisticated equipment as spray pyrolysis technique does; a muffle, ultrasonic equipment, and a hot plate magnetic stirrer are the principal apparatus necessary to carry out the adapted Pechini method. On the other hand, this method allows metal oxides to disperse homogeneously. The cyclic voltammograms showed the stability of DSA, and the accelerated life test allowed establishing its useful life (18.18 years) at a current density of 10 mA cm-2.
关键词： Zirconium oxide ZrO2,thermal method,polymer mixture,Dimensionally Stable Anode,pretreatment of the titanium,metallic precursors,Antimony oxide Sb2O5,Ruthenium oxide RuO2
更新于2025-09-10 09:29:36
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Current transport and capacitance-voltage characteristics of Sb2Se3/n-Si heterojunction diode prepared by electron beam evaporation
摘要： The Sb2Se3 thin film was successfully deposited on the n-Si substrate using an electron beam evaporated technique. The structural investigation was done by means of X-ray diffraction analysis. The surface morphology and elemental analysis of the synthesized films were studied by FESEM and EDAX, respectively. The electrical properties of the Sb2Se3/n-Si heterojunction were considered by current-voltage (I-V) and capacitance-voltage (C-V) measurements. The I-V results of Sb2Se3/n-Si heterojunction diode show a rectifying behavior. The junction ideality factor, barrier height, and series resistance values were extracted from the rectifying curves at different temperatures. The capacitance-voltage results show the abrupt nature of the junction under consideration.
关键词： diode,ideality factor,Antimony selenide,Electron beam,FESEM,XRD
更新于2025-09-09 09:28:46
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Influence of the Iodide to Bromide Ratio on Crystallographic and Optoelectronic Properties of Rubidium Antimony Halide Perovskites
摘要： Rubidium antimony halides are a promising low toxic alternative to organo-lead halide perovskites as photovoltaic material. In this contribution we systematically investigate the influence of varying the bromide to iodide ratio on the structural, optical and photovoltaic properties of Rb3Sb2Br9-xIx (x = 0 – 9). Single crystal data reveal that all compounds crystallize in a 2D-layered monoclinic crystal structure. Sequential substitution of iodide with the smaller bromide does not change the crystal system, however, increasing the bromide content results in a shrinkage of the unit cell as well as in a blue shift of the absorption onset, increasing the band gap from 2.02 eV to 2.46 eV. Whereas the photovoltaic properties of bromide rich compounds are limited due to a preferential orientation of the layered structure parallel to the substrate, which is detrimental to charge transport, solar cells with Rb3Sb2I9 as absorber material display power conversion efficiencies of 1.37%. Moreover, the devices exhibit low hysteresis properties and are stable for more than 150 days stored under inert atmosphere.
关键词： single crystal,thin film,antimony perovskites,photoluminescence,lead-free perovskite,solar cells,structural characterization
更新于2025-09-09 09:28:46
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Leaching kinetics of tellurium-bearing materials in alkaline sulfide solutions
摘要： Leaching of tellurium from tellurium-bearing materials is of significant importance. A novel alkaline sulphide leaching process for tellurium-bearing materials was developed. It was found that 94.92% of tellurium and 95.70% of antimony were extracted under optimum conditions: 200 g/L of Na2S concentration, 80 °C of temperature, 10:1 mL/g of L/S and 60 min of leaching time. The kinetic data for the dissolution of tellurium and antimony followed the Avrami equation. The calculated activation energies indicated that tellurium dissolution was controlled by the mixed regime of both the diffusion and chemical reaction, while antimony dissolution was controlled by chemical reaction.
关键词： antimony,Avrami equation,kinetics,alkaline sulfide leaching,tellurium-bearing materials,Tellurium
更新于2025-09-04 15:30:14