1：Experimental Design and Method Selection:

The Sb2Se3 thin film was deposited onto n-type silicon single crystal substrates by electron beam evaporation technique. The structural properties were investigated by X-ray diffraction (XRD), and the surface morphology and elemental composition were studied by field-emission scanning electron microscopy (FESEM) and energy dispersive X-Ray (EDAX), respectively. The electrical properties were studied by current-voltage (I-V) and capacitance-voltage (C-V) measurements.

2：Sample Selection and Data Sources:

n-type silicon wafers were used as substrates. The antimony selenide bulk ingot material was prepared by direct fusion of stoichiometric parentage of the constituent elements in a vacuum sealed silica tube.

3：List of Experimental Equipment and Materials:

Electron beam deposition technique, X-ray diffraction (XRD, Philips X' pert MPD, Panalytical, Netherlands), field-emission scanning electron microscopy (FESEM, Quanta FEG 250, and FEI, USA), energy dispersive X-Ray unit (EDAX), high impedance Keithley electrometers model 617, C-V meter (Model 4108).

4：8). Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: The Sb2Se3 thin film was evaporated onto n-type silicon wafers at vacuum pressure 10-5 Pa. The thickness of the deposited film was controlled through the evaporation process by quartz crystal thickness monitor. The electrical features were studied by I-V and C-V techniques at dark conditions and at different heating temperatures.

5：Data Analysis Methods:

The ideality factor, barrier height, and series resistance values were extracted from the I-V curves. The capacitance-voltage characteristics were measured at 1MHz at room temperature.