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Double-function SiO2-DMS coating with antireflection and superhydrophobic surface
摘要： A double-function SiO2 coating with antireflection and superhydrophobic properties was fabricated through a cost-effective and time-efficient sol-gel method. Tetraethoxysilane was used as a precursor to obtain SiO2 with an antireflection property. Hexamethyldisilazane was used as a modifier to produce SiO2-DMS with a superhydrophobic behaviour. The SiO2-DMS coating had a water contact angle of 153° and a water slide angle of <10°. The optimised SiO2-DMS coating had an average transmittance of 96.07% at a wavelength of 300-800 nm. The entire process could be completed in a short time.
关键词： nanoparticle,sol-gel method,superhydrophobic,antireflection
更新于2025-09-23 15:23:52
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Graded-Index Fluoropolymer Antireflection Coatings for Invisible Plastic Optics
摘要： Plastic optics are used in an ever-expanding range of applications and yet a durable, high performance antireflection (AR) coating remains elusive for this material class. Here, we introduce a sacrificial porogen approach to produce ultralow refractive index nanoporous fluoropolymer AR coatings via thermal co-evaporation of Teflon AF and the small molecule N,N′-Bis(3-methylphenyl)-N,N′-diphenylbenzidine (NPD). Using this approach, we demonstrate a five-layer, step-graded AR coating that reduces the solar spectrum-averaged (400 < λ < 2000 nm) reflectance of acrylic plastic to <0.5% for incidence angles up to 40° and withstands over three months of outdoor rooftop exposure with minimal degradation. A trilayer coating optimized for the visible range yields luminous reflectivity down to ~0.1%, effectively rendering double-side coated acrylic plastic invisible under room lighting conditions. Strong adhesion to most optical plastics, an outstanding combination of mechanical, chemical, and environmental durability, and compatibility with commercial vacuum coating systems should enable this AR technology to find widespread practical use.
关键词： gradient-index,polymer optics,sacrificial porogen,antireflection,nanoporous
更新于2025-09-23 15:23:52
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Efficiency Improvement of Planar Silicon Solar Cells Utilizing Localized Surface Plasmon Resonance of Silver Nanoparticles
摘要： In this work we develop a time- and cost-effective method of fabricating an antireflection structure on Si solar cells utilizing the localized surface plasmon resonance (LSPR) of Ag nanoparticles (NPs). Covered with an Al2O3 layer to prevent degradation, the NP decorated Si solar cell exhibits a broadband light absorption enhancement, having a low weighted average spectral reflectance (Rave) value of 9.5%, and exhibits the highest absolute gain of 19.2% in external quantum efficiency (EQE) at 700 nm and an overall 20% relative increase in power efficiency (η) compared to the reference Si solar cell without NPs.
关键词： metal nanoparticles,localized surface plasmon resonance,antireflection coating,silicon
更新于2025-09-23 15:21:01
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Wide angle antireflection in metal nanoparticles embedded in a dielectric matrix for plasmonic solar cells
摘要： The photon density in solar cells is usually optimized through tailored antireflection coatings (ARCs). We develop an analytical model to describe metal hybrid nanoparticles (NPs)-based ARC, where metal NPs are embedded in a standard ARC on a Si-substrate. A point dipole approach is implemented to calculate diffuse reflectance by NPs, while transfer matrix method is used for specular reflectance from front surface. We found that embedding metal NPs in SiN ARC enhances the antireflection property of the former at non-normal angles of incidence (AOI) of light. Electric field distribution patterns of radiation in the substrate by NPs are calculated for various AOI, which support the improvements in the antireflection property. Weighted solar power transmittances from ARCs are calculated, which show that Ag-NPs (radius = 35 nm) embedded in SiN (thickness = 70 nm) performs better than SiN for AOI over 74°, whereas Al-NPs (radius = 35 nm) embedded in SiN (thickness = 70 nm) performs better for AOI over 78°.
关键词： solar cells,plasmonics,metal nanoparticles,silicon,transfer matrix method,antireflection coating
更新于2025-09-23 15:19:57
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Broadband, wide-angle antireflection in GaAs through surface nano-structuring for solar cell applications
摘要： We demonstrate broadband and wide-angle antireflective surface nanostructuring in GaAs semiconductors using variable dose electron-beam lithography (EBL). Various designed structures are written with EBL on a positive EB-resist coated GaAs and developed followed by shallow inductively coupled plasma etching. An optimized nanostructured surface shows a reduced surface reflectivity down to less than 2.5% in the visible range of 450–700 nm and an average reflectance of less than 4% over a broad near-infrared wavelength range from 900–1400 nm. The results are obtained over a wide incidence angle of 33.3°. This study shows the potential for anti-reflective structures using a simpler reverse EBL process which can provide optical absorption or extraction efficiency enhancement in semiconductors relevant to improved performance in solar photovoltaics or light-emitting diodes.
关键词： GaAs,surface nano-structuring,broadband,solar cell applications,wide-angle,antireflection
更新于2025-09-23 15:19:57
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Improving the efficiency of a-Si:H/c-Si thin heterojunction solar cells by using both antireflection coating engineering and diffraction grating
摘要： In this paper, we present an analytical study of the impact of light trapping and multilayer antireflection coating (ARC) on the electrical characteristics of n(a-Si:H)/i(a-Si:H)/p(c-Si)/p+(C-Si) heterojunction solar cells with intrinsic thin layer (SHJ). The developed analytical model considers a triangular texture morphology of the solar cell top surface and a double ARC layer. This model serves as a fitness function to optimize the device reliability against the interfacial traps using Grey Wolf optimization approach (GWO). The optimized solar cell reveals a high short circuit current ISC=47.9mA, an open circuit voltage VOC=0.56V, fill factor FF=74.72% and a conversion efficiency improvement in the order of 30% over conventional planar solar cells efficiency. Not only the optimized SHJ solar cell exhibits higher performance in terms of figure of merits, but also shows superior interfacial traps reliability at the amorphous/crystalline interface. This reliability enhancement is due to a better surface texture control and intrinsic thin film layer tuning provided by GWO approach.
关键词： conversion efficiency,surface texture,GWO approach,interfacial defects,antireflection coating
更新于2025-09-19 17:15:36
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Nonstoichiometric amorphous silicon carbide films as promising antireflection and protective coatings for germanium in IR spectral range
摘要： A technology for preparation of amorphous nonstoichiometric hydrogenated silicon carbide (a-SixC1-x:H) films using the PE-CVD method has been developed. Such films with refractive index n = 1.8–2.1 are suitable to obtain antireflection effect on germanium in the IR spectral region. Single- and two-sided antireflection coatings of Ge enabled to increase its optical transmission up to 65% and 96% in the maximum transmission, respectively. The obtained films have good mechanical properties (H > 12 GPa, E = 100 GPa). Presence of Si-C bonds in the a-SixC1-x:H films restricts their range of application to the spectral interval 2.5–10 μm. The prepared films are uniform in composition and have high adhesion to the substrate. Variation of deposition conditions makes it possible to obtain a-SixC1-x:H films having high hardness and Young's modulus. High deposition rate, optimal optical properties of the a-SixC1-x:H films and good combination of mechanical properties for the Ge/a-SixC1-x:H film structures make them to be promising for practical application as antireflection and protective coatings for germanium.
关键词： Germanium,Antireflection coatings,Elements of IR optics,Nonstoichiometric SiC films
更新于2025-09-19 17:15:36
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Radiation hardness investigation of heterojunction solar cell structures with TCO antireflection films
摘要： Phosphorus doped silicon carbide film as emitter in heterojunction structure was deposited on p-type Si(100) wafers at various deposition conditions by means of PECVD technology using silane (SiH4), methane (CH4), hydrogen (H2) and phosphine (PH3, 2 vol.% in H2) gas as precursors. ITO or IZO film was RF magnetron sputtered on top of the different P doped a-SiC:H(n) film. Irradiation of structures with Xe ions to total fluency 5x1011 cm-2 was performed at room temperature. Influence of phosphorus concentration and type of transparent conducting oxide was investigated. A deeper insight on the impact of irradiation on the electrophysical properties of sample was obtained by the analysis of complex impedance spectra.
关键词： Xe ions irradiation,RF magnetron sputtering,TCO antireflection films,radiation hardness,impedance spectra,heterojunction solar cell,PECVD
更新于2025-09-19 17:13:59
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Ga(In)AsP Lateral Nanostructures as the Optical Component of GaAs-Based Photovoltaic Converters
摘要： The possibility of using lateral Ga(In)AsP nanostructures grown by the catalytic method in a quasi-closed volume from phosphorus and indium vapors on the GaAs (100) surface as an antireflection coating for photovoltaic devices is considered for the first time. It is shown that, at a fixed growth temperature, it is possible to control the surface morphology by changing the growth duration. The surface morphology is examined by scanning electron and atomic force microscopies. It is shown that the antireflection properties of the surface in the range 400–800 nm are related to its structure. The use of such a coating in GaAs-based photocells demonstrated a significant increase in the external quantum yield of photovoltaic converters.
关键词： Ga(In)AsP,nanostructures,antireflection coating,catalytic growth
更新于2025-09-16 10:30:52
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Solar Cell Using Hourglass-Shaped Silicon Nanowires for Increased Light-Trapping Path
摘要： Silicon nanowires (SiNWs) are promising structures with excellent photovoltaic properties for low-cost, high-efficiency solar cells and have the potential to overcome the limits of bulk silicon solar cells. There is still a need to enhance light absorption in SiNWs without increasing the surface area. Here, we introduce a novel design, hourglass-shaped silicon nanowire (HG-SiNW) to significantly increase the light-trapping path. Electrical and optical measurements show the superiority of HG-SiNW as an antireflective layer. In addition, whispering gallery mode identified by optical simulations accounts for the greatly improved absorption at the broadband solar spectrum. The HG-SiNW solar cells show an increase in short-circuit current (JSC) and 1.85 times higher efficiency with only simple diameter variations.
关键词： light absorption,Antireflection,silicon (Si) nanostructures,photovoltaics (PVs),whispering gallery mode (WGM)
更新于2025-09-16 10:30:52