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Electrochemical transformation of black phosphorous to phosphorene quantum dots: effect of nitrogen doping
摘要： We present a comparative analysis of the structural and optical properties of electrosynthesized PQDs, a new class of size-tunable luminescent materials and their nitrogen doped counter parts(NPQDs). Nitrogen doping onto phopshorene lattice could be realized in situ at room temperature using either nitrogen containing electrolyte and/or supporting electrolyte in the solution. An increased quantum ef?ciency as well as redox behavior has been observed for PQDs upon nitrogen doping and a critical analysis of the effect of nitrogen on the structural, optical and electrochemical properties of PQDs suggests several potential bene?ts of applications ranging from electrocatalysts and molecular electronics to different types of sensors and bioimaging.
关键词： Nitrogen Doping,Phosphorene Quantum Dots,Black Phosphorus,Electrosynthesis
更新于2025-09-16 10:30:52
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High performance near infrared photodetector based on in-plane black phosphorus p-n homojunction
摘要： Black phosphorus (BP) has been considered as an appealing candidate for broadband photodetection from the visible to the infrared part of the spectrum owing to its tunable direct band gap and high carrier mobility. However, compared with other typical materials, the photoresponsivity of BP devices is rather weak. In this work, a near infrared photodetector with high performance based on in-plane BP p-n homojunction was investigated. The strong built-in electric field of the p-n junction can be modulated through bias and gate voltage, where the photo generated electron-hole pairs can be effectively separated, thus, leads to the enhanced photocurrent and faster photoresponse. Compared with the pristine BP, the photoresponsivity of the BP p-n homojunction under 1550 nm displays a 50-fold increment. The response time of the in-plane BP p-n homojunction photodetector exhibits two orders of magnitude improvement than that of the pristine BP and other lateral homogeneous BP p-n junction. Fascinatingly, the BP p-n photodetector also displays visible-infrared dual-band detection with well separated spectral response, opening up a feasibility of the intelligent identification of infrared targets.
关键词： In-plane homojunction,Dual-band detection,Near infrared photodetector,Black Phosphorus
更新于2025-09-16 10:30:52
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Black/red phosphorus quantum dots for photocatalytic water splitting: from a type I heterostructure to a Z-scheme system
摘要： By virtue of the quantum confinement effect, the junction between black phosphorus and red phosphorus changes from a type I heterostructure for bulk materials to a Z-scheme system for quantum dots. The Z-scheme system of black/red phosphorus quantum dots (BP/RP-QD) achieves H2 evolution from water splitting in the absence of sacrificial agents.
关键词： red phosphorus,black phosphorus,quantum dots,photocatalytic water splitting,Z-scheme system
更新于2025-09-12 10:27:22
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MOCVD Heteroepitaxial β‐Ga <sub/>2</sub> O <sub/>3</sub> and Black Phosphorus Pn Heterojunction for Solar‐Blind Ultraviolet and Infrared Dual‐Band Photodetector
摘要： MOCVD heteroepitaxial β-Ga2O3 and BP pn heterojunction for solar-blind UV and IR dual-band photodetector is proposed and demonstrated for the first time. The device demonstrates a remarkable photoresponse under UV and IR irradiations with a responsivity of 88.5 mA/W and 1.24 mA/W, respectively, an obvious pn heterojunction characteristics, as well as an excellent photoswitch periodicity. Moreover, under different irradiation conditions, the photoelectric properties of β-Ga2O3/BP pn heterojunction, including their photogeneration and photoresponse, are investigated in detail. These results signify that β-Ga2O3/BP pn heterojunction may find potential applications in future UV/IR dual-band detection systems.
关键词： black phosphorus,β-Ga2O3,heterojunctions,UV/IR,photodetector
更新于2025-09-12 10:27:22
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[ACS Symposium Series] Fundamentals and Applications of Phosphorus Nanomaterials Volume 1333 || Black Phosphorus Based Photodetectors
摘要： The layered two-dimensional (2D) black phosphorus (BP) has found significant applications in nanoelectronics and nanophotonics. In particular, it has been proven as a promising material for photodetectors due to its narrow direct bandgap ranging from 0.3 eV to 2 eV, high carrier mobility, modulation capability, and polarization sensitivity. The modulation capability of BP based photodetector is achieved by gate control using field effect transistor structure. Homojunction and heterojunction have been demonstrated to suppress dark current while enhancing carrier collection efficiency. Plasmonic effect and avalanche breakdown are exploited to boost the responsivity further. To extend the detection wavelength of BP, electric field modulation and arsenide doping are investigated, leading to a wide detection wavelength up to 8 μm. Owing to the ease of integrating BP with diverse substrates due to BP’s 2D nature, waveguide-integrated BP based photodetectors are realized in the near-infrared (NIR) for telecommnunication applications and in the mid-infrared (MIR) for on-chip sensing applications. High speed and high responsivity can be achieved by optimizing the device design. Despite that the mechanical robustness of BP on waveguide remains challenging, nevertheless, wafer-level growth of BP is highly desirable to realize scalable integration for mass production.
关键词： near-infrared,black phosphorus,waveguide-integrated,nanoelectronics,nanophotonics,photodetectors,mid-infrared
更新于2025-09-12 10:27:22
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Oxidation-resistance Black Phosphorus Enable Highly Ambient-stable Ultrafast Pulse Generation at 2 μm Tm/Ho-doped Fiber Laser
摘要： Black phosphorus (BP) ranks among the most promising saturable absorber materials for ultrafast pulse generations at 2 μm. However, the easy-to-degrade characteristic of BP seriously limits the long-term operation of ultrafast fiber lasers and hence becomes a bottleneck for its relevant practical applications. In this paper, a modified electrochemical delamination exfoliation process was explored to produce high-performance, large-size and oxidation-resistance BP nanosheets, where BP nanosheets in high yield with evenly coated tetra-n-butyl-ammonium (TBA) organics by precisely controlling the intercalation chemistry can be obtained. A mode-locked Tm/Ho co-doped fiber laser with high temporal stability and long-term operation capability was demonstrated based on the innovatively-fabricated BP saturable absorber. The self-starting mode-locking operation featuring high signal-to-noise ratio of 58 dB and long-term stability has been verified for at least three weeks, which indicates the successful passivation of the employed synthesis method. These results fully indicated that passivated BP is an efficient candidate in 2 μm range ultrafast photonics field, which will promote the ultrafast optical application of BP and also other infrared photonic and photoelectronic devices.
关键词： mode-locked laser,2D materials,fiber laser,mid-infrared,black phosphorus
更新于2025-09-12 10:27:22
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Tunable mid-infrared perfect absorber based on the critical coupling of graphene and black phosphorus nanoribbons
摘要： We demonstrate theoretically a wide-angle and tunable mid-infrared perfect absorber by coupling the graphene and black phosphorus plasmonics and utilizing the concept of critical coupling. With the black phosphorus nanoribbons alone, the localized surface plasmon resonances (LSPR) can be excited, while the absorption is small due to its single-layer thickness. A Fabry-Perot cavity is formed by adding an Au mirror as the substrate, which is separated from the black phosphorus by a dielectric spacer, hence the absorption is enhanced markedly due to critical coupling. In order to further enhance the absorption, a graphene grating is introduced on the top of black phosphorus and is separated by a dielectric slab. It is shown that the perfect absorption can be obtained due to the critical coupling of LSPR of black phosphorus and graphene. Based on these result, it is further demonstrated that the perfect absorption can work in large incident angle range, and the working wavelengths can be adjusted by the Fermi level of graphene. Our results provide a new avenue to achieve wide-angle and adjustable perfect absorption, and it may be beneficial for a variety of mid-infrared plasmonic applications.
关键词： plasmonics,mid-infrared,perfect absorber,graphene,black phosphorus,critical coupling
更新于2025-09-12 10:27:22
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Spectral responsivity and photoconductive gain in thin film black phosphorus photodetectors
摘要： We have fabricated black phosphorus photodetectors and characterized their full spectral responsivity. These devices, which are effectively in the bulk thin film limit, show broadband responsivity ranging from <400 nm to the ~3.8 μm bandgap. In the visible, an intrinsic responsivity >6 A/W can be obtained due to internal gain mechanisms. By examining the full spectral response, we identify a sharp contrast between the visible and infrared behavior. In particular, the visible responsivity shows a large photoconductive gain and gate-voltge dependence, while the infrared responsivity is nearly independent of gate voltage and incident light intensity under most conditions. This is attributed to a contribution from the surface oxide. In addition, we find that the polarization anisotropy in responsivity along armchair and zigzag directions can be as large as 103 and extends from the band edge to 500 nm. The devices were fabricated in an inert atmosphere and encapsulated by Al2O3 providing stable operation for more than 6 months.
关键词： Two-dimensional materials,Mid-infrared,Photodetectors,Black phosphorus,Photoconductive gain
更新于2025-09-12 10:27:22
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Negative terahertz conductivity and amplification of surface plasmons in graphene–black phosphorus injection laser heterostructures
摘要： We propose and evaluate the heterostructure based on the graphene layer (GL) with the lateral electron injection from the side contacts and the hole vertical injection via the black phosphorus layer (BL) (P+-PL-PL-GL heterostructure). Due to a relatively small energy of the holes injected from the PL into the GL (about 100 meV, smaller than the energy of optical phonons in the GL which is about 200 meV), the hole injection can effectively cool down the two-dimensional electron-hole plasma in the GL. This simpli?es the realization of the interband population inversion and the achievement of the negative dynamic conductivity in the terahertz (THz) frequency range enabling the ampli?cation of the surface plasmon modes. The latter can lead to the plasmon lasing. The conversion of the plasmons into the output radiation can be used for new types of the THz sources.
关键词： graphene,black phosphorus,terahertz,injection laser,surface plasmons
更新于2025-09-12 10:27:22
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Bright/dark switchable mode-locked fiber laser based on black phosphorus
摘要： Stable bright/dark switchable mode-locked nanosecond pulse fiber laser incorporating black phosphorus (BP) was demonstrated in the Yb-doped fiber ring cavity for the first time, to the best of our knowledge. The high-quality BP saturable absorber (SA) was fabricated by the modified electrochemical delamination exfoliation process. The states between bright and dark pulse could be switched by simply adjusting the intra-cavity polarization states, and close agreement with the cubic Ginzburg-Landau equation (CGLE) models is present.
关键词： Mode-locked,Bright/dark pulse,Fiber laser,Black phosphorus
更新于2025-09-11 14:15:04