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Wafer-Scale Fabrication of 2D PtS <sub/>2</sub> /PtSe <sub/>2</sub> Heterojunctions for Efficient and Broadband Photodetection
摘要： The fabrication of van der Waals heterostructures have mainly extends to two-dimensional materials that are exfoliated from their bulk counterparts, which is greatly limited by high-volume manufacturing. Here, we demonstrate multilayered PtS2/PtSe2 heterojunctions covering a large area on SiO2/Si substrate with a maximum size of 2" in diameter, offering throughputs that can meet the practical application demand. Theoretical simulation was carried out to understand the electronic properties of the PtS2/PtSe2 heterojunctions. Zero-bias photoresponse in the heterojunctions is observed under laser illumination of different wavelengths (405 to 2200 nm). The PtS2/PtSe2 heterojunctions exhibit broadband photoresponse, high quantum efficiency at infrared wavelengths with lower bounds for the external quantum efficiencies (EQE) being 1.2% at 1064 nm, 0.2% at 1550 nm and 0.05% at 2200 nm, and also relatively fast response time at the dozens of millisecond level. The large area, broadband 2D heterojunction photodetector demonstrated in this work further corroborating the great potential of 2D materials in the future low-energy optoelectronics.
关键词： van der Waals heterostructures,self-driving operation,quantum efficiency,broadband photodetection,photoresponsivity,wafer-scale fabrication
更新于2025-09-23 15:21:01
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Gianta??Enhanced SnS <sub/>2</sub> Photodetectors with Broadband Response through Oxygen Plasma Treatment
摘要： Layered tin disulfide (SnS2) is a vital semiconductor with versatile functionality due to its high carrier mobility and excellent photoresponsivity. However, the intrinsic defects Vs (sulfur vacancies), which cause Fermi level pinning (significant metal contact resistance), hinder its electrical and optoelectrical performance. Herein, oxygen plasma treatment is employed to enhance the optoelectronic performance of SnS2 flakes, which results in artificial sub-bandgap in SnS2. Consequently, the broadband photosensing (300–750 nm) is remarkably improved. Specifically, under 350 nm illumination, the O2-plasma-treated SnS2 photodetector exhibits an enhanced photoresponsivity from 385 to 860 A W?1, the external quantum efficiency and the detectivity improve by one order of magnitude as well as increase the photoswitching response improvement by two orders of magnitude for both rising (τr) and decay (τd) time. This artificial sub-bandgap can both improve the photoresponse and broaden the response spectra, which paves a new path for the applications of optoelectronics.
关键词： broadband photodetection,2D materials,SnS2 photodetectors,oxygen plasma treatment
更新于2025-09-23 15:19:57
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Mixed-dimensional PdSe <sub/>2</sub> /SiNWA heterostructure based photovoltaic detectors for self-driven, broadband photodetection, infrared imaging and humidity sensing
摘要： The new discovery of two-dimensional (2D) palladium diselenide (PdSe2) films has attracted intensive research interest due to their unique asymmetric crystal structure and extraordinary optoelectronic properties, showing great potential for broadband and polarization photodetection. Herein, we have developed for the first time a self-driven, highly polarization-sensitive, broadband photovoltaic detector based on a PdSe2/Si nanowire array (SiNWA) heterostructure. Owing to the strong light confinement effect of the SiNWA and broadband light absorption of PdSe2, the present device exhibits pronounced photovoltaic behavior and excellent performance in terms of a high responsivity of 726 mA W?1, a large specific detectivity of 3.19 × 1014 Jones, an ultrabroad spectrum response range of 0.2–4.6 mm, and a fast response speed to monitor nanosecond pulsed light signals. Significantly, an impressive polarization sensitivity of 75 is achieved for the heterostructure device, which is among the highest for 2D material-based photodetectors. Thanks to the outstanding imaging capability, the detector can record images in both near infrared (NIR) and mid-infrared (MIR) ranges with a decent resolution. Moreover, the device exhibits light-enhanced humidity sensing behavior with a high sensitivity and a fast response/recovery time. Given these remarkable device features, the PdSe2/SiNWA heterostructure will hold great promise for high-performance, polarization-sensitive broadband photodetection, infrared imaging and humidity sensing applications.
关键词： humidity sensing,SiNWA,infrared imaging,photovoltaic detector,heterostructure,broadband photodetection,PdSe2
更新于2025-09-19 17:13:59
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A Noble Metal Dichalcogenide for High‐Performance Field‐Effect Transistors and Broadband Photodetectors
摘要： 2D layered materials are an emerging class of low-dimensional materials with unique physical and structural properties and extensive applications from novel nanoelectronics to multifunctional optoelectronics. However, the widely investigated 2D materials are strongly limited in high-performance electronics and ultrabroadband photodetectors by their intrinsic weaknesses. Exploring the new and narrow bandgap 2D materials is very imminent and fundamental. A narrow-bandgap noble metal dichalcogenide (PtS2) is demonstrated in this study. The few-layer PtS2 field-effect transistor exhibits excellent electronic mobility exceeding 62.5 cm2 V?1 s?1 and ultrahigh on/off ratio over 106 at room temperature. The temperature-dependent conductance and mobility of few-layer PtS2 transistors show a direct metal-to-insulator transition and carrier scattering mechanisms, respectively. Remarkably, 2D PtS2 photo detectors with broadband photodetection from visible to mid-infrared and a fast photoresponse time of 175 μs at 830 nm illumination for the first time are obtained at room temperature. Our work opens an avenue for 2D noble-metal dichalcogenides to be applied in high-performance electronic and mid-infrared optoelectronic devices.
关键词： broadband photodetection,PtS2,on-off ratio,field-effect transistors,mobility
更新于2025-09-12 10:27:22