研究目的
To develop a self-driven, highly polarization-sensitive, broadband photovoltaic detector based on a PdSe2/Si nanowire array (SiNWA) heterostructure for applications in broadband photodetection, infrared imaging, and humidity sensing.
研究成果
The PdSe2/SiNWA heterostructure photovoltaic detector exhibits excellent performance in terms of high responsivity, large specific detectivity, fast response speed, and high polarization sensitivity. It also shows promising applications in infrared imaging and humidity sensing. The device's remarkable features suggest great potential for high-performance, polarization-sensitive broadband photodetection, infrared imaging, and humidity sensing applications.
研究不足
The study does not discuss the scalability of the fabrication process or the long-term stability of the device under continuous operation. Additionally, the power conversion efficiency of the device is relatively low (≈0.1%).
1:Experimental Design and Method Selection:
The study involved the synthesis of 2D PdSe2 films via a selenization method and Si nanowire arrays (SiNWA) via a Ag-assisted chemical etching method. The heterostructure was fabricated by transferring PdSe2 films onto SiNWA.
2:Sample Selection and Data Sources:
The samples were characterized using FESEM, Raman spectroscopy, AFM, XPS, and UV-Vis-NIR spectrophotometry.
3:List of Experimental Equipment and Materials:
Equipment included a magnetron sputtering system, tube furnace, FESEM (JEOL, JSM-6700F), Raman spectrometer (Horiba, LabRAM HR Evolution), AFM (VeecoNanoscope V), XPS (Thermo ESCALAB 250), and UV-Vis-NIR spectrophotometer (Hitachi, UH4150).
4:0). Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: The PdSe2/SiNWA heterostructure device was fabricated and its optoelectrical performances were evaluated using a semiconductor parameter analyzer system, monochromator, lock-in amplifier, function generator, and oscilloscope.
5:Data Analysis Methods:
The electric field energy density distribution of the device was simulated by the FDTD method.
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Xe lamp
Gloria-X150A
Zolix Instruments
Light source for photo-response measurements
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FESEM
JSM-6700F
JEOL
Characterization of the morphology of PdSe2 and SiNWA
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AFM
Nanoscope V
Veeco
Characterization of the as-synthesized large-area PdSe2 films
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XPS
ESCALAB 250
Thermo
Characterization of the as-synthesized large-area PdSe2 films
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UV-Vis-NIR spectrophotometer
UH4150
Hitachi
Characterization of the as-synthesized large-area PdSe2 films
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Semiconductor parameter analyzer system
4200-SCS
Keithley
Evaluation of the optoelectrical performances of the device
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Monochromator
Omni-l300
Zolix Instruments
Evaluation of the optoelectrical performances of the device
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Lock-in amplifier
SR830
Stanford Research System
Evaluation of the optoelectrical performances of the device
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Oscilloscope
DPO2012B
Tektronix
Evaluation of the optoelectrical performances of the device
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Raman spectrometer
LabRAM HR Evolution
Horiba
Characterization of the as-synthesized large-area PdSe2 films
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Function generator
SDG1032X
Siglent
Evaluation of the optoelectrical performances of the device
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