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Efficient Structure for InP/ZnS-Based Electroluminescence Device by Embedding the Emitters in the Electron-Dominating Interface
摘要： The charge-carrier distribution has been an important parameter in determining the efficiency of quantum-dot-based light-emitting diodes (QLEDs). In this Letter, we demonstrate a new inverted device structure of ITO/ZnO/polyethylenimine/quantum dots (QDs)/1,3,5-tris(N-phenylbenzimidazole-2-yl)benzene (TPBi)/4,4′-bis(9-carbazolyl)-2,2′-biphenyl (CBP)/MoO3/Al for improving the efficiency of InP-QD-based QLEDs. By introducing a thin layer of electron transport materials, the hole accumulation at the hole transport layer and the QD interface is largely reduced, which suppresses the quenching effect of holes on the QD emission. Compared with the conventional device structure with the emitters at ZnO/CBP pn junction, the peak current efficiency (external quantum efficiency) increases from 3.83 (5.17 cd/A) to 6.32% (8.54 cd/A) by imbedding the QDs at the electron-dominating interface of ZnO/TPBi. The analysis reveals that an internal quantum efficiency of nearly 100% is achieved for the InP-QD-based device (with a photoluminescence quantum yield of 32%). This work provides an alternative device structure for achieving high-efficiency QLED devices.
关键词： electron transport materials,quantum-dot-based light-emitting diodes,internal quantum efficiency,charge-carrier distribution,InP-QD-based QLEDs
更新于2025-09-23 15:19:57
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Theoretical Study of Proton Radiation Influence on the Performance of a Polycrystalline Silicon Solar Cell
摘要： The aim of this work is to study the behaviour of a silicon solar cell under the irradiation of di?erent ?uences of high-energy proton radiation (10 MeV) and under constant multispectral illumination. Many theoretical et experimental studies of the e?ect of irradiation (proton, gamma, electron, etc.) on solar cells have been carried out. These studies point out the e?ect of irradiation on the behaviour of the solar cell electrical parameters but do not explain the causes of these e?ects. In our study, we explain fundamentally the causes of the e?ects of the irradiation on the solar cells. Taking into account the empirical formula of di?usion length under the e?ect of high-energy particle irradiation, we established new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity. Based on these equations, we studied the behaviour of some electronic and electrical parameters under proton radiation. Theoretical results showed that the defects created by the irradiation change the carrier distribution and the carrier dynamic in the bulk of the base and then in?uence the solar cell electrical parameters (short-circuit current, open-circuit voltage, conversion e?ciency). It appears also in this study that, at low ?uence, junction dynamic velocity decreases due to the presence of tunnel defects. Obtained results could lead to improve the quality of the junction of a silicon solar cell.
关键词： silicon solar cell,proton radiation,diffusion length,electrical parameters,carrier distribution,junction dynamic velocity
更新于2025-09-16 10:30:52