研究目的
To study the behaviour of a silicon solar cell under the irradiation of different fluences of high-energy proton radiation (10 MeV) and under constant multispectral illumination, and to explain fundamentally the causes of the effects of the irradiation on the solar cells.
研究成果
The study demonstrates that proton irradiation significantly affects the performance of silicon solar cells by altering carrier distribution and dynamics, leading to changes in electrical parameters such as short-circuit current, open-circuit voltage, and conversion efficiency. The findings suggest that improving the quality of the solar cell junction could mitigate some of the negative effects of irradiation.
研究不足
The study is theoretical and does not involve experimental validation. The effects of irradiation are analyzed based on theoretical models and assumptions, which may not fully capture all real-world conditions and variations.
1：Experimental Design and Method Selection:
The study considers a solar cell irradiated with a low fluence (less than 1013 cm-2) of 10 MeV protons under multispectral illumination. The methodology involves solving the continuity equation with the assumption that proton damage results in a modification of the diffusion length.
2：Sample Selection and Data Sources:
The study uses theoretical models and empirical formulas to analyze the effects of irradiation on solar cell performance.
3：List of Experimental Equipment and Materials:
The study is theoretical and does not list specific experimental equipment or materials.
4：Experimental Procedures and Operational Workflow:
The study involves establishing new expressions of continuity equation, photocurrent density, photovoltage, and dynamic junction velocity based on the empirical formula of diffusion length under the effect of high-energy particle irradiation.
5：Data Analysis Methods:
The study analyzes the behavior of electronic and electrical parameters under proton radiation using theoretical models and equations.
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