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Depth Profiling of Carrier Lifetime in Thick 4H-SiC Epilayers Using Two-Photon Absorption
摘要： Depth profiling of the ambipolar carrier lifetime was performed in n-type, 140μm thick silicon carbide (SiC) epilayer using excitation by two-photon absorption (TPA) with a pulsed 586nm laser, and confocal measurement of time resolved photoluminescence (TRPL) decay from the excited region. A depth resolution of ≈10μm was obtained. The PL decay curves were analyzed using a recently developed formalism that takes into account the TPA excitation, carrier diffusion and surface/interface recombination. The carrier lifetime decreases near the top surface of the epitaxial layer as well as near its interface with the substrate.
关键词： Carrier lifetime profiling,Silicon Carbide
更新于2025-09-23 15:23:52
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Low-temperature dark anneal as pre-treatment for LeTID in multicrystalline silicon
摘要： Light and elevated temperature induced degradation (LeTID) is currently a severe issue in crystalline silicon photovoltaics, which has led to numerous efforts to both understand the mechanism and to mitigate it. Here we show that a low-temperature dark anneal performed as the last step in typical solar cell processing influences greatly LeTID characteristics, both the strength of the degradation and the degradation kinetics. While a relatively short anneal in the temperature range of 200–240 °C can be detrimental to LeTID by doubling the degradation intensity, an optimized anneal at 300 °C shows the opposite trend providing an efficient means to eliminate LeTID. Furthermore, we show that the simulated recombination activity of metal precipitation and dissolution during the dark anneal correlates with the experiments, suggesting a possible explanation for the LeTID mechanism.
关键词： PERC,Precipitation,Multicrystalline silicon,Minority-carrier lifetime,LeTID,Copper in silicon
更新于2025-09-23 15:23:52
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Contactless Optical Characterization of Carrier Dynamics in Free-Standing InAs-InAlAs Core-Shell Nanowires on Silicon
摘要： Contactless time-resolved pump-probe and external quantum efficiency measurements were performed on epitaxially grown free-standing wurtzite indium arsenide/indium aluminum arsenide (InAs-InAlAs) core-shell nanowires on Si (111) substrate from 77K to 293K. The first independent investigation of Shockley-Read-Hall, radiative and Auger recombination in InAs-based NWs is presented. Although the Shockley-Read Hall recombination coefficient was found to be at least two orders of magnitude larger than the average experimental values of other reported InAs materials, the Auger recombination coefficient was reported to be ten-fold smaller. The very low Auger and high radiative rates result in an estimated peak internal quantum efficiency of the core-shell nanowires as high as 22% at 77K, making these nanowires of potential interest for high efficiency mid-infrared emitters. A greater than two-fold enhancement in minority carrier lifetime was observed from capping nanowires with a thin InAlAs shell due to passivation of surface defects.
关键词： Auger recombination rate,radiative,Shockley-Read-Hall,Pump-probe spectroscopy,core-shell nanowires,surface/interface recombination velocity,minority carrier lifetime
更新于2025-09-23 15:23:52
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Numerical analysis of single-point spectroscopy curves used in photo-carrier dynamics measurements by Kelvin probe force microscopy under frequency-modulated excitation
摘要： In recent years, the investigation of the complex interplay between the nanostructure and photo-transport mechanisms has become of crucial importance for the development of many emerging photovoltaic technologies. In this context, Kelvin probe force microscopy under frequency-modulated excitation has emerged as a useful technique for probing photo-carrier dynamics and gaining access to carrier lifetime at the nanoscale in a wide range of photovoltaic materials. However, some aspects about the data interpretation of techniques based on this approach are still the subject of debate, for example, the plausible presence of capacitance artifacts. Special attention shall also be given to the mathematical model used in the data-fitting process as it constitutes a determining aspect in the calculation of time constants. Here, we propose and demonstrate an automatic numerical simulation routine that enables to predict the behavior of spectroscopy curves of the average surface photovoltage as a function of a frequency-modulated excitation source in photovoltaic materials, enabling to compare simulations and experimental results. We describe the general aspects of this simulation routine and we compare it against experimental results previously obtained using single-point Kelvin probe force microscopy under frequency-modulated excitation over a silicon nanocrystal solar cell, as well as against results obtained by intensity-modulated scanning Kelvin probe microscopy over a polymer/fullerene bulk heterojunction device. Moreover, we show how this simulation routine can complement experimental results as additional information about the photo-carrier dynamics of the sample can be gained via the numerical analysis.
关键词： Kelvin probe force microscopy,nanostructured photovoltaics,numerical simulations,photo-carrier dynamics,carrier dynamics,carrier recombination,carrier lifetime
更新于2025-09-23 15:22:29
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Microscopic FCA System for Depth-Resolved Carrier Lifetime Measurement in SiC
摘要： For high voltage SiC bipolar devices, carrier lifetime is an important parameter, and for optimization of device performance, we need to control the distribution of the carrier lifetime in a wafer. So far, there have been limited systems for depth-resolved carrier lifetime measurements without the necessity of making a cross sectional cut. In this study, we adopted a free carrier absorption technique and made local overlapping of the probe laser light with excitation laser light to develop depth-resolved carrier lifetime measurements. We named the developed system a microscopic FCA system and demonstrated measurement results for samples with and without intentional carrier lifetime distribution.
关键词： free carrier absorption,4H-SiC,carrier lifetime
更新于2025-09-23 15:22:29
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A facile room-temperature synthesis of three-dimensional coral-like Ag2S nanostructure with enhanced photocatalytic activity
摘要： Morphology is a crucial factor in determining the chemical, optical, and electrical properties of nanoscale materials. In this work, we utilized a facile room-temperature deposition method to synthesize three-dimensional (3D) coral-like Ag2S nanostructures. The formation mechanism of 3D coral-like Ag2S nanostructures was proposed by tracking the reaction process. In comparison with 0D Ag2S nanoparticles and 1D Ag2S nanowires of similar size, 3D coral-like Ag2S nanostructures exhibit higher pore volume, photocatalytic activity and cyclic stability for degradation of methyl orange (MO). Surface photovoltage measurement, electrochemical impedance spectroscopy, and Mott–Schottky analysis showed that compared to other Ag2S nanostructures, 3D coral-like Ag2S nanostructures have the strongest surface photovoltaic response, longest carrier lifetime, and highest carrier density.
关键词： Carrier lifetime,Surface photovoltage,Ag2S,3D coral-like nanostructure,Photocatalytic activity
更新于2025-09-23 15:21:21
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Examination of relationship between Urbach energy and open-circuit voltage deficit of flexible Cu(In,Ga)Se <sub/>2</sub> solar cell for its improved photovoltaic performance
摘要： Flexible Cu(In,Ga)Se2 (CIGSe) solar cells on stainless steel (SUS) substrates are developed. The contribution concentrates on the investigation of the correlation between Urbach energy (EU) and open-circuit voltage deficit (VOC,def). The several CIGSe solar cells on soda-lime glass and SUS substrates with various VOC,def values are fabricated through the variations of [Ga]/([Ga]+[In]) ratio (GGI), substrate temperature (TSUB) and Fe concentration of their CIGSe absorbers. The EU is determined based on external quantum efficiency in the long-wavelength edge. It is determined that the EU is influenced by the GGI, TSUB and Fe concentration. The EU is well consistent with the carrier lifetimes and can be an indicator of the CIGSe quality. In addition, the relationship between EU and VOC,def is obviously observed, where the decrease in the EU by 1 meV reduces the VOC,def by 8.6 mV. Through the optimizations of GGI and TSUB as well as the minimization of Fe concentration, the EU is obviously reduced, which implies the improvement of the CIGSe quality. Ultimately, the high η of 17.9% for the flexible CIGSe solar cell on SUS substrate is attained.
关键词： Cu(In,Ga)Se2,stainless steel substrate,TRPL carrier lifetime,Urbach energy,open-circuit voltage deficit
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Performance of silicon heterojunction solar cells using high resistivity substrates
摘要： We investigate the potential advantages of using very high resistivity n- and p-type, to manufacture high performance solar cells. Analytical modeling indicates that high resistivity substrates (10 Ωcm - >1k Ωcm) are required to have bulk Shockley-Read-Hall lifetimes in the millisecond range to outperform wafers with standard resistivities (< 10 Ωcm). Additionally, for resistivities over 10 Ω.cm, efficiencies show to be weakly dependent of the bulk resistivity. These results if experimental verified, can lead to more affordable manufacturing, by lessening the requirements of dopants homogeneity along the ingot. We successfully passivated both n- and p- type substrates using i-a-Si:H, obtaining surface saturation current densities below 10 fAcm-2 and effective minority-carrier lifetimes over 2 ms at maximum power over the entire range of bulk resistivities (3 Ωcm- >10k Ωcm).
关键词： photovoltaic cells,doping,charge carrier lifetime,silicon,amorphous materials
更新于2025-09-23 15:19:57
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Ultra-long carrier lifetime in neutral graphene-hBN van der Waals heterostructures under mid-infrared illumination
摘要： Graphene/hBN heterostructures are promising active materials for devices in the THz domain, such as emitters and photodetectors based on interband transitions. Their performance requires long carrier lifetimes. However, carrier recombination processes in graphene possess sub-picosecond characteristic times for large non-equilibrium carrier densities at high energy. An additional channel has been recently demonstrated in graphene/hBN heterostructures by emission of hBN hyperbolic phonon polaritons (HPhP) with picosecond decay time. Here, we report on carrier lifetimes in graphene/hBN Zener-Klein transistors of ~30 ps for photoexcited carriers at low density and energy, using mid-infrared photoconductivity measurements. We further demonstrate the switching of carrier lifetime from ~30 ps (attributed to interband Auger) down to a few picoseconds upon ignition of HPhP relaxation at finite bias and/or with infrared excitation power. Our study opens interesting perspectives to exploit graphene/hBN heterostructures for THz lasing and highly sensitive THz photodetection as well as for phonon polariton optics.
关键词： photodetectors,mid-infrared,phonon polaritons,van der Waals heterostructures,THz,Graphene,carrier lifetime,hBN
更新于2025-09-23 15:19:57
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Long carrier lifetime in faceted PbS quantum dot superlattice fabricated by sedimentation method
摘要： We fabricated colloidal quantum dot (QD) superlattice films and investigated their primal optical properties. The films were prepared by depositing faceted PbS QDs on pyramidal-microhole-array template and flat substrate in solution. The red shift in the quantum state emission of QDs was observed in photoluminescence spectra after film formation, which suggested the weakened quantum confinement of carriers in intermediate bands. Emission decay curves at the excited states in the QD superlattice film were double exponential. The longer lifetime was several tens of nanoseconds and attributed to the carrier delocalization in the intermediate bands. The emission lifetime of the QD film prepared on the template was found to be more than twice as long as that on the flat substrate, which suggested that the template helped to form large area QD superlattice.
关键词： sedimentation method,colloidal quantum dot,PbS,superlattice,carrier lifetime
更新于2025-09-23 15:19:57