研究目的
Investigating the potential advantages of using very high resistivity n- and p-type substrates to manufacture high performance solar cells.
研究成果
High resistivity substrates with bulk lifetimes in the millisecond range can outperform standard resistivity wafers, potentially leading to more affordable manufacturing by reducing dopant homogeneity requirements. Effective passivation was achieved across a wide range of resistivities.
研究不足
The study is limited by the range of resistivities tested and the assumption of perfect surface passivation in some scenarios. Further experimental verification is needed to confirm the modeling results.
1：Experimental Design and Method Selection:
The study involves analytical modeling and experimental work on passivated samples with bulk resistivities between 3Ωcm and >10k Ωcm.
2：Sample Selection and Data Sources:
Float Zone quality wafers with <100> orientation and single side polished, thicknesses varying from 250 to 500 μm.
3：List of Experimental Equipment and Materials:
Wafers were etched with alkaline solution and acidic chemical cleaning, passivated with 30 nm-thick intrinsic hydrogenated amorphous silicon (i-a-Si:H) deposited by PECVD.
4：Experimental Procedures and Operational Workflow:
Wafers were prepared by removing saw damage and chemically cleaned before passivation.
5：Data Analysis Methods:
Effective minority-carrier lifetimes were measured and compared across different resistivities.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
